JPS5340278A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5340278A JPS5340278A JP11472376A JP11472376A JPS5340278A JP S5340278 A JPS5340278 A JP S5340278A JP 11472376 A JP11472376 A JP 11472376A JP 11472376 A JP11472376 A JP 11472376A JP S5340278 A JPS5340278 A JP S5340278A
- Authority
- JP
- Japan
- Prior art keywords
- difference
- manufacture
- semiconductor device
- film
- wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000011810 insulating material Substances 0.000 abstract 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000011229 interlayer Substances 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Weting (AREA)
- Electrodes Of Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11472376A JPS5340278A (en) | 1976-09-27 | 1976-09-27 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11472376A JPS5340278A (en) | 1976-09-27 | 1976-09-27 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5340278A true JPS5340278A (en) | 1978-04-12 |
| JPS614180B2 JPS614180B2 (enExample) | 1986-02-07 |
Family
ID=14645000
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11472376A Granted JPS5340278A (en) | 1976-09-27 | 1976-09-27 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5340278A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58119651A (ja) * | 1982-01-11 | 1983-07-16 | Nippon Telegr & Teleph Corp <Ntt> | 半導体装置およびその製造方法 |
| US7657983B2 (en) | 2002-01-11 | 2010-02-09 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Method of producing a topology-optimized electrode for a resonator in thin-film technology |
-
1976
- 1976-09-27 JP JP11472376A patent/JPS5340278A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58119651A (ja) * | 1982-01-11 | 1983-07-16 | Nippon Telegr & Teleph Corp <Ntt> | 半導体装置およびその製造方法 |
| US7657983B2 (en) | 2002-01-11 | 2010-02-09 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Method of producing a topology-optimized electrode for a resonator in thin-film technology |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS614180B2 (enExample) | 1986-02-07 |
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