JPS532552B2 - - Google Patents

Info

Publication number
JPS532552B2
JPS532552B2 JP3617574A JP3617574A JPS532552B2 JP S532552 B2 JPS532552 B2 JP S532552B2 JP 3617574 A JP3617574 A JP 3617574A JP 3617574 A JP3617574 A JP 3617574A JP S532552 B2 JPS532552 B2 JP S532552B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP3617574A
Other languages
Japanese (ja)
Other versions
JPS50130368A (ref
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP3617574A priority Critical patent/JPS532552B2/ja
Priority to AT0243075A priority patent/AT370559B/de
Priority to AU79189/75A priority patent/AU502578B2/en
Priority to GB11691/75A priority patent/GB1496814A/en
Priority to US05/561,532 priority patent/US4014037A/en
Priority to CH381875A priority patent/CH583461A5/xx
Priority to FR7509475A priority patent/FR2266301B1/fr
Priority to DE2513459A priority patent/DE2513459B2/de
Priority to ES436123A priority patent/ES436123A1/es
Priority to SE7503614A priority patent/SE406249C/xx
Priority to IT21844/75A priority patent/IT1034720B/it
Priority to SU752121500A priority patent/SU638289A3/ru
Priority to NLAANVRAGE7503870,A priority patent/NL182681C/xx
Priority to CA223,550A priority patent/CA1029475A/en
Publication of JPS50130368A publication Critical patent/JPS50130368A/ja
Priority to US05/857,284 priority patent/US4176372A/en
Publication of JPS532552B2 publication Critical patent/JPS532552B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/481—Encapsulations, e.g. protective coatings characterised by their materials comprising semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6322—Formation by thermal treatments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/905—Plural dram cells share common contact or common trench

Landscapes

  • Formation Of Insulating Films (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Recrystallisation Techniques (AREA)
JP3617574A 1974-03-30 1974-03-30 Expired JPS532552B2 (ref)

Priority Applications (15)

Application Number Priority Date Filing Date Title
JP3617574A JPS532552B2 (ref) 1974-03-30 1974-03-30
AT0243075A AT370559B (de) 1974-03-30 1975-03-08 Halbleiterbauteil, planartransistor sowie verfahren zur herstellung derselben
AU79189/75A AU502578B2 (en) 1974-03-30 1975-03-18 Passivation layer for semiconductor device
GB11691/75A GB1496814A (en) 1974-03-30 1975-03-20 Semiconductor devices
US05/561,532 US4014037A (en) 1974-03-30 1975-03-24 Semiconductor device
CH381875A CH583461A5 (ref) 1974-03-30 1975-03-25
DE2513459A DE2513459B2 (de) 1974-03-30 1975-03-26 Halbleiterbauelement mit einer polykristallinen Siliciumabdeckung und Verfahren zu seiner Herstellung
FR7509475A FR2266301B1 (ref) 1974-03-30 1975-03-26
ES436123A ES436123A1 (es) 1974-03-30 1975-03-27 Un dispositivo semiconductor.
SE7503614A SE406249C (sv) 1974-03-30 1975-03-27 Halvledardon innefattande ett enkristallhalvledarsubstrat med ett polykristallint kiselskikt anordnat pa substratet, vilket skikt innehaller syre i omradet 2-4 atom-%
IT21844/75A IT1034720B (it) 1974-03-30 1975-03-28 Dispositivo semiconduttore
SU752121500A SU638289A3 (ru) 1974-03-30 1975-03-28 Полупроводниковое устройство
NLAANVRAGE7503870,A NL182681C (nl) 1974-03-30 1975-04-01 Halfgeleiderinrichting met een passiveringslaag van polykristallijn silicium met hoge weerstand.
CA223,550A CA1029475A (en) 1974-03-30 1975-04-01 Semiconductor device having a passivation layer consisting of silicon and oxygen, and method of manufacturing the same
US05/857,284 US4176372A (en) 1974-03-30 1977-12-05 Semiconductor device having oxygen doped polycrystalline passivation layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3617574A JPS532552B2 (ref) 1974-03-30 1974-03-30

Publications (2)

Publication Number Publication Date
JPS50130368A JPS50130368A (ref) 1975-10-15
JPS532552B2 true JPS532552B2 (ref) 1978-01-28

Family

ID=12462395

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3617574A Expired JPS532552B2 (ref) 1974-03-30 1974-03-30

Country Status (14)

Country Link
US (1) US4014037A (ref)
JP (1) JPS532552B2 (ref)
AT (1) AT370559B (ref)
AU (1) AU502578B2 (ref)
CA (1) CA1029475A (ref)
CH (1) CH583461A5 (ref)
DE (1) DE2513459B2 (ref)
ES (1) ES436123A1 (ref)
FR (1) FR2266301B1 (ref)
GB (1) GB1496814A (ref)
IT (1) IT1034720B (ref)
NL (1) NL182681C (ref)
SE (1) SE406249C (ref)
SU (1) SU638289A3 (ref)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6022497B2 (ja) * 1974-10-26 1985-06-03 ソニー株式会社 半導体装置
JPS5193874A (en) 1975-02-15 1976-08-17 Handotaisochino seizohoho
JPS51123562A (en) * 1975-04-21 1976-10-28 Sony Corp Production method of semiconductor device
JPS6041458B2 (ja) * 1975-04-21 1985-09-17 ソニー株式会社 半導体装置の製造方法
JPS51126761A (en) * 1975-04-25 1976-11-05 Sony Corp Schottky barrier type semi-conductor unit
JPS51128269A (en) * 1975-04-30 1976-11-09 Sony Corp Semiconductor unit
FR2335951A1 (fr) * 1975-12-19 1977-07-15 Radiotechnique Compelec Dispositif semiconducteur a surface passivee et procede d'obtention de la structure de passivation
IN147572B (ref) * 1977-02-24 1980-04-19 Rca Corp
IN147578B (ref) * 1977-02-24 1980-04-19 Rca Corp
DE2713647C2 (de) * 1977-03-28 1984-11-29 Tokyo Shibaura Electric Co., Ltd., Kawasaki, Kanagawa Halbleitervorrichtung, bestehend aus einem Halbleitersubstrat und aus einem Oberflächenschutzfilm
US4194934A (en) * 1977-05-23 1980-03-25 Varo Semiconductor, Inc. Method of passivating a semiconductor device utilizing dual polycrystalline layers
DE2730367A1 (de) * 1977-07-05 1979-01-18 Siemens Ag Verfahren zum passivieren von halbleiterelementen
US4174252A (en) * 1978-07-26 1979-11-13 Rca Corporation Method of defining contact openings in insulating layers on semiconductor devices without the formation of undesirable pinholes
US4191788A (en) * 1978-11-13 1980-03-04 Trw Inc. Method to reduce breakage of V-grooved <100> silicon substrate
US4199384A (en) * 1979-01-29 1980-04-22 Rca Corporation Method of making a planar semiconductor on insulating substrate device utilizing the deposition of a dual dielectric layer between device islands
JPS5627935A (en) * 1979-08-15 1981-03-18 Toshiba Corp Semiconductor device
GB2071411B (en) 1980-03-07 1983-12-21 Philips Electronic Associated Passivating p-n junction devices
US4803528A (en) * 1980-07-28 1989-02-07 General Electric Company Insulating film having electrically conducting portions
US4339285A (en) * 1980-07-28 1982-07-13 Rca Corporation Method for fabricating adjacent conducting and insulating regions in a film by laser irradiation
US4344985A (en) * 1981-03-27 1982-08-17 Rca Corporation Method of passivating a semiconductor device with a multi-layer passivant system by thermally growing a layer of oxide on an oxygen doped polycrystalline silicon layer
US4420765A (en) * 1981-05-29 1983-12-13 Rca Corporation Multi-layer passivant system
US4537813A (en) * 1982-09-27 1985-08-27 At&T Technologies, Inc. Photomask encapsulation
US4965173A (en) * 1982-12-08 1990-10-23 International Rectifier Corporation Metallizing process and structure for semiconductor devices
US4489103A (en) * 1983-09-16 1984-12-18 Rca Corporation SIPOS Deposition method
JPS6068621A (ja) * 1983-09-26 1985-04-19 Toshiba Corp 半導体装置の製造方法
EP0160941A3 (en) * 1984-05-07 1987-03-25 General Electric Company High voltage interconnect system for a semiconductor integrated circuit
US4663820A (en) * 1984-06-11 1987-05-12 International Rectifier Corporation Metallizing process for semiconductor devices
DE3520599A1 (de) * 1984-06-15 1985-12-19 Rca Corp., Princeton, N.J. Halbleiterbauelement
JPS6276673A (ja) * 1985-09-30 1987-04-08 Toshiba Corp 高耐圧半導体装置
KR900005038B1 (ko) * 1987-07-31 1990-07-18 삼성전자 주식회사 고저항 다결정 실리콘의 제조방법
US5192993A (en) * 1988-09-27 1993-03-09 Kabushiki Kaisha Toshiba Semiconductor device having improved element isolation area
EP0388612B1 (en) * 1989-03-24 1994-11-30 International Business Machines Corporation Semiconductor device with self-aligned contact to buried subcollector
DE4119904A1 (de) * 1991-06-17 1992-12-24 Telefunken Electronic Gmbh Halbleiteranordnung
JP5311791B2 (ja) * 2007-10-12 2013-10-09 東京エレクトロン株式会社 ポリシリコン膜の形成方法
JP5195186B2 (ja) * 2008-09-05 2013-05-08 三菱電機株式会社 半導体装置の製造方法
US11171039B2 (en) * 2018-03-29 2021-11-09 Taiwan Semiconductor Manufacturing Company Ltd. Composite semiconductor substrate, semiconductor device and method for manufacturing the same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE300472B (ref) * 1965-03-31 1968-04-29 Asea Ab
US3391287A (en) * 1965-07-30 1968-07-02 Westinghouse Electric Corp Guard junctions for p-nu junction semiconductor devices
US3710204A (en) * 1967-05-20 1973-01-09 Telefunken Patent A semiconductor device having a screen electrode of intrinsic semiconductor material
JPS497870B1 (ref) * 1969-06-06 1974-02-22
US3755721A (en) * 1970-06-15 1973-08-28 Intel Corp Floating gate solid state storage device and method for charging and discharging same
US3878549A (en) * 1970-10-27 1975-04-15 Shumpei Yamazaki Semiconductor memories
JPS5044209Y2 (ref) * 1971-04-20 1975-12-17

Also Published As

Publication number Publication date
GB1496814A (en) 1978-01-05
FR2266301B1 (ref) 1980-04-11
NL7503870A (nl) 1975-10-02
NL182681B (nl) 1987-11-16
DE2513459A1 (de) 1975-10-09
NL182681C (nl) 1988-04-18
SE406249B (sv) 1979-01-29
SE406249C (sv) 1987-07-13
AT370559B (de) 1983-04-11
CH583461A5 (ref) 1976-12-31
AU7918975A (en) 1976-09-23
ES436123A1 (es) 1977-04-16
SU638289A3 (ru) 1978-12-15
ATA243075A (de) 1982-08-15
IT1034720B (it) 1979-10-10
SE7503614L (ref) 1975-10-01
AU502578B2 (en) 1979-08-02
CA1029475A (en) 1978-04-11
JPS50130368A (ref) 1975-10-15
FR2266301A1 (ref) 1975-10-24
US4014037A (en) 1977-03-22
DE2513459B2 (de) 1981-01-08

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