JPS5324787A - Fet transistor - Google Patents

Fet transistor

Info

Publication number
JPS5324787A
JPS5324787A JP9227077A JP9227077A JPS5324787A JP S5324787 A JPS5324787 A JP S5324787A JP 9227077 A JP9227077 A JP 9227077A JP 9227077 A JP9227077 A JP 9227077A JP S5324787 A JPS5324787 A JP S5324787A
Authority
JP
Japan
Prior art keywords
fet transistor
fet
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9227077A
Other languages
English (en)
Japanese (ja)
Inventor
Eichi Denaado Robaato
Pii Supamupinato Dominitsuku
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS5324787A publication Critical patent/JPS5324787A/ja
Priority to US06/351,600 priority Critical patent/US4444591A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10W20/40—

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP9227077A 1976-08-19 1977-08-02 Fet transistor Pending JPS5324787A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US06/351,600 US4444591A (en) 1977-08-02 1982-02-23 Chromogenic compounds and the use thereof as color former in copying or recording materials

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/715,948 US4095251A (en) 1976-08-19 1976-08-19 Field effect transistors and fabrication of integrated circuits containing the transistors

Publications (1)

Publication Number Publication Date
JPS5324787A true JPS5324787A (en) 1978-03-07

Family

ID=24876116

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9227077A Pending JPS5324787A (en) 1976-08-19 1977-08-02 Fet transistor

Country Status (6)

Country Link
US (1) US4095251A (enExample)
JP (1) JPS5324787A (enExample)
CA (1) CA1092253A (enExample)
FR (1) FR2362493A1 (enExample)
GB (1) GB1589288A (enExample)
IT (1) IT1118043B (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54146978A (en) * 1978-05-08 1979-11-16 Ibm Method of fabricating field effect transistor
JPS5536993A (en) * 1978-09-01 1980-03-14 Teletype Corp Semiconductor device and method of fabricating same
JPS55141757A (en) * 1979-04-16 1980-11-05 Teletype Corp Method of fabricating device in semiconductor
JPS55157537U (enExample) * 1979-04-28 1980-11-12

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2802838A1 (de) * 1978-01-23 1979-08-16 Siemens Ag Mis-feldeffekttransistor mit kurzer kanallaenge
US4180826A (en) * 1978-05-19 1979-12-25 Intel Corporation MOS double polysilicon read-only memory and cell
US4212684A (en) * 1978-11-20 1980-07-15 Ncr Corporation CISFET Processing including simultaneous doping of silicon components and FET channels
US4222816A (en) * 1978-12-26 1980-09-16 International Business Machines Corporation Method for reducing parasitic capacitance in integrated circuit structures
DE2902665A1 (de) * 1979-01-24 1980-08-07 Siemens Ag Verfahren zum herstellen von integrierten mos-schaltungen in silizium-gate- technologie
US4355455A (en) * 1979-07-19 1982-10-26 National Semiconductor Corporation Method of manufacture for self-aligned floating gate memory cell
US4267632A (en) * 1979-10-19 1981-05-19 Intel Corporation Process for fabricating a high density electrically programmable memory array
JPS5696854A (en) * 1979-12-29 1981-08-05 Fujitsu Ltd Semiconductor memory device
US4326332A (en) * 1980-07-28 1982-04-27 International Business Machines Corp. Method of making a high density V-MOS memory array
JPS57124479A (en) * 1981-01-27 1982-08-03 Clarion Co Ltd Manufacture of metal oxide semiconductor type semiconductor device
US4493056A (en) * 1982-06-30 1985-01-08 International Business Machines Corporation RAM Utilizing offset contact regions for increased storage capacitance
EP0195460B1 (en) * 1985-03-22 1997-07-09 Nec Corporation Integrated circuit semiconductor device having improved isolation region
US4847517A (en) * 1988-02-16 1989-07-11 Ltv Aerospace & Defense Co. Microwave tube modulator
US5006911A (en) * 1989-10-02 1991-04-09 Motorola, Inc. Transistor device with high density contacts
US5164806A (en) * 1990-05-23 1992-11-17 Mitsubishi Denki Kabushiki Kaisha Element isolating structure of semiconductor device suitable for high density integration
JP2881267B2 (ja) * 1991-01-11 1999-04-12 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP2901788B2 (ja) * 1991-07-19 1999-06-07 ローム株式会社 炭化珪素半導体装置
US5444283A (en) * 1991-12-17 1995-08-22 Mosel Vitelic Corporation Dopant-diffusion buffered buried contact module for integrated circuits
US5250459A (en) * 1992-04-14 1993-10-05 Micron Technology, Inc. Electrically programmable low resistive antifuse element
US6683350B1 (en) 1993-02-05 2004-01-27 Semiconductor Energy Laboratory Co., Ltd. Transistor and method for manufacturing the same
JP3318384B2 (ja) * 1993-02-05 2002-08-26 株式会社半導体エネルギー研究所 薄膜トランジスタ及びその作製方法
US5606202A (en) * 1995-04-25 1997-02-25 International Business Machines, Corporation Planarized gate conductor on substrates with above-surface isolation
US6221715B1 (en) * 1998-07-28 2001-04-24 Winbond Electronics Corporation Method of making polysilicon self-aligned to field isolation oxide
US6091630A (en) * 1999-09-10 2000-07-18 Stmicroelectronics, Inc. Radiation hardened semiconductor memory

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5051276A (enExample) * 1973-08-06 1975-05-08
US3936859A (en) * 1973-08-06 1976-02-03 Rca Corporation Semiconductor device including a conductor surrounded by an insulator

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5051276A (enExample) * 1973-08-06 1975-05-08
US3936859A (en) * 1973-08-06 1976-02-03 Rca Corporation Semiconductor device including a conductor surrounded by an insulator

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54146978A (en) * 1978-05-08 1979-11-16 Ibm Method of fabricating field effect transistor
JPS5536993A (en) * 1978-09-01 1980-03-14 Teletype Corp Semiconductor device and method of fabricating same
JPS55141757A (en) * 1979-04-16 1980-11-05 Teletype Corp Method of fabricating device in semiconductor
JPS55157537U (enExample) * 1979-04-28 1980-11-12

Also Published As

Publication number Publication date
FR2362493A1 (fr) 1978-03-17
GB1589288A (en) 1981-05-07
US4095251A (en) 1978-06-13
CA1092253A (en) 1980-12-23
IT1118043B (it) 1986-02-24
FR2362493B1 (enExample) 1979-03-30

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