FR2362493B1 - - Google Patents

Info

Publication number
FR2362493B1
FR2362493B1 FR7720732A FR7720732A FR2362493B1 FR 2362493 B1 FR2362493 B1 FR 2362493B1 FR 7720732 A FR7720732 A FR 7720732A FR 7720732 A FR7720732 A FR 7720732A FR 2362493 B1 FR2362493 B1 FR 2362493B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7720732A
Other languages
French (fr)
Other versions
FR2362493A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2362493A1 publication Critical patent/FR2362493A1/fr
Application granted granted Critical
Publication of FR2362493B1 publication Critical patent/FR2362493B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10W20/40—
FR7720732A 1976-08-19 1977-06-30 Transistor a effet de champ perfectionne et son procede de fabrication Granted FR2362493A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/715,948 US4095251A (en) 1976-08-19 1976-08-19 Field effect transistors and fabrication of integrated circuits containing the transistors

Publications (2)

Publication Number Publication Date
FR2362493A1 FR2362493A1 (fr) 1978-03-17
FR2362493B1 true FR2362493B1 (enExample) 1979-03-30

Family

ID=24876116

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7720732A Granted FR2362493A1 (fr) 1976-08-19 1977-06-30 Transistor a effet de champ perfectionne et son procede de fabrication

Country Status (6)

Country Link
US (1) US4095251A (enExample)
JP (1) JPS5324787A (enExample)
CA (1) CA1092253A (enExample)
FR (1) FR2362493A1 (enExample)
GB (1) GB1589288A (enExample)
IT (1) IT1118043B (enExample)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2802838A1 (de) * 1978-01-23 1979-08-16 Siemens Ag Mis-feldeffekttransistor mit kurzer kanallaenge
US4216573A (en) * 1978-05-08 1980-08-12 International Business Machines Corporation Three mask process for making field effect transistors
US4180826A (en) * 1978-05-19 1979-12-25 Intel Corporation MOS double polysilicon read-only memory and cell
US4219925A (en) * 1978-09-01 1980-09-02 Teletype Corporation Method of manufacturing a device in a silicon wafer
US4212684A (en) * 1978-11-20 1980-07-15 Ncr Corporation CISFET Processing including simultaneous doping of silicon components and FET channels
US4222816A (en) * 1978-12-26 1980-09-16 International Business Machines Corporation Method for reducing parasitic capacitance in integrated circuit structures
DE2902665A1 (de) * 1979-01-24 1980-08-07 Siemens Ag Verfahren zum herstellen von integrierten mos-schaltungen in silizium-gate- technologie
US4288910A (en) * 1979-04-16 1981-09-15 Teletype Corporation Method of manufacturing a semiconductor device
JPS55157537U (enExample) * 1979-04-28 1980-11-12
US4355455A (en) * 1979-07-19 1982-10-26 National Semiconductor Corporation Method of manufacture for self-aligned floating gate memory cell
US4267632A (en) * 1979-10-19 1981-05-19 Intel Corporation Process for fabricating a high density electrically programmable memory array
JPS5696854A (en) * 1979-12-29 1981-08-05 Fujitsu Ltd Semiconductor memory device
US4326332A (en) * 1980-07-28 1982-04-27 International Business Machines Corp. Method of making a high density V-MOS memory array
JPS57124479A (en) * 1981-01-27 1982-08-03 Clarion Co Ltd Manufacture of metal oxide semiconductor type semiconductor device
US4493056A (en) * 1982-06-30 1985-01-08 International Business Machines Corporation RAM Utilizing offset contact regions for increased storage capacitance
EP0195460B1 (en) * 1985-03-22 1997-07-09 Nec Corporation Integrated circuit semiconductor device having improved isolation region
US4847517A (en) * 1988-02-16 1989-07-11 Ltv Aerospace & Defense Co. Microwave tube modulator
US5006911A (en) * 1989-10-02 1991-04-09 Motorola, Inc. Transistor device with high density contacts
US5164806A (en) * 1990-05-23 1992-11-17 Mitsubishi Denki Kabushiki Kaisha Element isolating structure of semiconductor device suitable for high density integration
JP2881267B2 (ja) * 1991-01-11 1999-04-12 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP2901788B2 (ja) * 1991-07-19 1999-06-07 ローム株式会社 炭化珪素半導体装置
US5444283A (en) * 1991-12-17 1995-08-22 Mosel Vitelic Corporation Dopant-diffusion buffered buried contact module for integrated circuits
US5250459A (en) * 1992-04-14 1993-10-05 Micron Technology, Inc. Electrically programmable low resistive antifuse element
US6683350B1 (en) 1993-02-05 2004-01-27 Semiconductor Energy Laboratory Co., Ltd. Transistor and method for manufacturing the same
JP3318384B2 (ja) * 1993-02-05 2002-08-26 株式会社半導体エネルギー研究所 薄膜トランジスタ及びその作製方法
US5606202A (en) * 1995-04-25 1997-02-25 International Business Machines, Corporation Planarized gate conductor on substrates with above-surface isolation
US6221715B1 (en) * 1998-07-28 2001-04-24 Winbond Electronics Corporation Method of making polysilicon self-aligned to field isolation oxide
US6091630A (en) * 1999-09-10 2000-07-18 Stmicroelectronics, Inc. Radiation hardened semiconductor memory

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IN140846B (enExample) * 1973-08-06 1976-12-25 Rca Corp
US3936859A (en) * 1973-08-06 1976-02-03 Rca Corporation Semiconductor device including a conductor surrounded by an insulator

Also Published As

Publication number Publication date
FR2362493A1 (fr) 1978-03-17
GB1589288A (en) 1981-05-07
US4095251A (en) 1978-06-13
CA1092253A (en) 1980-12-23
IT1118043B (it) 1986-02-24
JPS5324787A (en) 1978-03-07

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Legal Events

Date Code Title Description
ST Notification of lapse