JPS5320474B2 - - Google Patents

Info

Publication number
JPS5320474B2
JPS5320474B2 JP6812372A JP6812372A JPS5320474B2 JP S5320474 B2 JPS5320474 B2 JP S5320474B2 JP 6812372 A JP6812372 A JP 6812372A JP 6812372 A JP6812372 A JP 6812372A JP S5320474 B2 JPS5320474 B2 JP S5320474B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP6812372A
Other languages
Japanese (ja)
Other versions
JPS4928581A (en:Method
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4928581A publication Critical patent/JPS4928581A/ja
Publication of JPS5320474B2 publication Critical patent/JPS5320474B2/ja
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901Levitation, reduced gravity, microgravity, space
    • Y10S117/902Specified orientation, shape, crystallography, or size of seed or substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Silicates, Zeolites, And Molecular Sieves (AREA)
JP6812372A 1971-07-07 1972-07-07 Expired JPS5320474B2 (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SU1670901A SU400139A1 (ru) 1971-07-07 1971-07-07 Фонд вноертш

Publications (2)

Publication Number Publication Date
JPS4928581A JPS4928581A (en:Method) 1974-03-14
JPS5320474B2 true JPS5320474B2 (en:Method) 1978-06-27

Family

ID=20479528

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6812372A Expired JPS5320474B2 (en:Method) 1971-07-07 1972-07-07

Country Status (11)

Country Link
US (1) US3853596A (en:Method)
JP (1) JPS5320474B2 (en:Method)
CH (1) CH572764A5 (en:Method)
CS (1) CS163478B1 (en:Method)
DD (1) DD98458A1 (en:Method)
DE (1) DE2233259C3 (en:Method)
FR (1) FR2144881B1 (en:Method)
GB (1) GB1393619A (en:Method)
IT (1) IT972156B (en:Method)
NL (1) NL7209445A (en:Method)
SU (1) SU400139A1 (en:Method)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3976535A (en) * 1975-05-27 1976-08-24 Bell Telephone Laboratories, Incorporated Screening seeds for quartz growth
FR2354810A1 (fr) * 1976-06-14 1978-01-13 Anvar Couches monocristallines, procedes de fabrication de telles couches, et structures comportant une couche monocristalline
US4487651A (en) * 1983-04-06 1984-12-11 Duracell Inc. Method for making irregular shaped single crystal particles and the use thereof in anodes for electrochemical cells
US4722763A (en) * 1986-12-23 1988-02-02 Duracell Inc. Method for making irregular shaped single crystal particles for use in anodes for electrochemical cells
US5916364A (en) * 1996-02-29 1999-06-29 Sumitomo Sitix Corporation Method and apparatus for pulling a single crystal
JP3209082B2 (ja) * 1996-03-06 2001-09-17 セイコーエプソン株式会社 圧電体薄膜素子及びその製造方法、並びにこれを用いたインクジェット式記録ヘッド

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1998334A (en) * 1931-08-13 1935-04-16 Gen Electric Electric radiation indicator
US2782676A (en) * 1952-03-01 1957-02-26 American Optical Corp Reflection reduction coatings and method for coating same
US2895858A (en) * 1955-06-21 1959-07-21 Hughes Aircraft Co Method of producing semiconductor crystal bodies
DE1259838B (de) * 1955-08-16 1968-02-01 Siemens Ag Verfahren zum Herstellen von Halbleiterkristallen
NL278562A (en:Method) * 1961-05-19
US3399072A (en) * 1963-03-04 1968-08-27 North American Rockwell Magnetic materials
US3372069A (en) * 1963-10-22 1968-03-05 Texas Instruments Inc Method for depositing a single crystal on an amorphous film, method for manufacturing a metal base transistor, and a thin-film, metal base transistor
US3574679A (en) * 1965-01-25 1971-04-13 North American Rockwell Process for embedding or encircling polycrystalline materials in single crystal material
US3518636A (en) * 1965-01-26 1970-06-30 North American Rockwell Ferrite memory device
US3498836A (en) * 1966-04-25 1970-03-03 Ibm Method for obtaining single crystal ferrite films
US3433684A (en) * 1966-09-13 1969-03-18 North American Rockwell Multilayer semiconductor heteroepitaxial structure
NL6810036A (en:Method) * 1967-08-16 1969-02-18
DE1789064A1 (de) * 1968-09-30 1971-12-30 Siemens Ag Verfahren zum Herstellen epitaktischer Schichten aus elektrisch isolierendem Material unter Verwendung eines aus Halbleitermaterial bestehenden Traegerkoerpers

Also Published As

Publication number Publication date
CH572764A5 (en:Method) 1976-02-27
DE2233259C3 (de) 1981-09-10
JPS4928581A (en:Method) 1974-03-14
SU400139A1 (ru) 1974-02-25
FR2144881B1 (en:Method) 1976-08-06
DE2233259B2 (de) 1981-01-22
NL7209445A (en:Method) 1973-01-09
DD98458A1 (en:Method) 1973-06-20
IT972156B (it) 1974-05-20
GB1393619A (en) 1975-05-07
FR2144881A1 (en:Method) 1973-02-16
CS163478B1 (en:Method) 1975-09-15
DE2233259A1 (de) 1973-01-25
US3853596A (en) 1974-12-10

Similar Documents

Publication Publication Date Title
AU474595B2 (en:Method)
AU465403B2 (en:Method)
FR2144881A1 (en:Method)
CH567105A5 (en:Method)
AU480055A (en:Method)
BE780681A (en:Method)
BE784855A (en:Method)
BE784982A (en:Method)
BE785431A (en:Method)
BE786107A (en:Method)
BE786277A (en:Method)
BE789069A (en:Method)
BE789989A (en:Method)
BG16675A1 (en:Method)
BG16798A1 (en:Method)
BG16808A1 (en:Method)
BG16874A1 (en:Method)
BG16890A1 (en:Method)
BG17025A1 (en:Method)
BG17252A1 (en:Method)
BG17418A1 (en:Method)
BG17670A1 (en:Method)
BG17870A1 (en:Method)
BG17997A1 (en:Method)
BG18086A1 (en:Method)