JPS5320351B2 - - Google Patents
Info
- Publication number
- JPS5320351B2 JPS5320351B2 JP7232873A JP7232873A JPS5320351B2 JP S5320351 B2 JPS5320351 B2 JP S5320351B2 JP 7232873 A JP7232873 A JP 7232873A JP 7232873 A JP7232873 A JP 7232873A JP S5320351 B2 JPS5320351 B2 JP S5320351B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL7209297A NL7209297A (US20100268047A1-20101021-C00003.png) | 1972-07-01 | 1972-07-01 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS4945681A JPS4945681A (US20100268047A1-20101021-C00003.png) | 1974-05-01 |
| JPS5320351B2 true JPS5320351B2 (US20100268047A1-20101021-C00003.png) | 1978-06-26 |
Family
ID=19816454
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7232873A Expired JPS5320351B2 (US20100268047A1-20101021-C00003.png) | 1972-07-01 | 1973-06-28 |
Country Status (9)
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5529174U (US20100268047A1-20101021-C00003.png) * | 1978-08-17 | 1980-02-25 | ||
| JPS55110044U (US20100268047A1-20101021-C00003.png) * | 1979-01-30 | 1980-08-01 | ||
| JPS55143455U (US20100268047A1-20101021-C00003.png) * | 1979-03-16 | 1980-10-14 | ||
| JPS56131322A (en) * | 1980-03-17 | 1981-10-14 | Mitsubishi Monsanto Chem | Cultivation of useful plant |
| JPS56131324A (en) * | 1980-03-17 | 1981-10-14 | Mitsubishi Monsanto Chem | Mulching cultivation |
| JPS56157965U (US20100268047A1-20101021-C00003.png) * | 1980-04-21 | 1981-11-25 | ||
| JPS5716297B2 (US20100268047A1-20101021-C00003.png) * | 1979-06-18 | 1982-04-03 | ||
| JPS585478Y2 (ja) * | 1978-03-24 | 1983-01-29 | 大日本樹脂株式会社 | 農業用地上保温材 |
| JPS5820855U (ja) * | 1981-08-04 | 1983-02-08 | 前原 信良 | 太陽熱蓄熱及び放熱体 |
| JPS58122951U (ja) * | 1982-02-17 | 1983-08-22 | 株式会社展建築設計事務所 | 農業用ビニ−ル・ハウス |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51135363A (en) * | 1975-05-19 | 1976-11-24 | Matsushita Electric Ind Co Ltd | Method of manufacturing semiconductors and its equipment |
| JPS5271171A (en) * | 1975-12-10 | 1977-06-14 | Matsushita Electronics Corp | Production of epitaxial wafer |
| JPS5277590A (en) * | 1975-12-24 | 1977-06-30 | Toshiba Corp | Semiconductor producing device |
| SE7710800L (sv) * | 1976-10-05 | 1978-04-06 | Western Electric Co | Forfarande for astadkommande av ett epitaxiellt skikt pa ett substrat |
| US4099041A (en) * | 1977-04-11 | 1978-07-04 | Rca Corporation | Susceptor for heating semiconductor substrates |
| US4386255A (en) * | 1979-12-17 | 1983-05-31 | Rca Corporation | Susceptor for rotary disc reactor |
| US4322592A (en) * | 1980-08-22 | 1982-03-30 | Rca Corporation | Susceptor for heating semiconductor substrates |
| US5242501A (en) * | 1982-09-10 | 1993-09-07 | Lam Research Corporation | Susceptor in chemical vapor deposition reactors |
| US4488507A (en) * | 1982-09-30 | 1984-12-18 | Jackson Jr David A | Susceptors for organometallic vapor-phase epitaxial (OMVPE) method |
| JPS60116229U (ja) * | 1984-01-10 | 1985-08-06 | 日本電気株式会社 | 半導体ウエ−ハの発熱担体 |
| JPS6169116A (ja) * | 1984-09-13 | 1986-04-09 | Toshiba Ceramics Co Ltd | シリコンウエハ−の連続ｃｖｄコ−テイング用サセプター |
| US4794217A (en) * | 1985-04-01 | 1988-12-27 | Qing Hua University | Induction system for rapid heat treatment of semiconductor wafers |
| US5119540A (en) * | 1990-07-24 | 1992-06-09 | Cree Research, Inc. | Apparatus for eliminating residual nitrogen contamination in epitaxial layers of silicon carbide and resulting product |
| US6217662B1 (en) * | 1997-03-24 | 2001-04-17 | Cree, Inc. | Susceptor designs for silicon carbide thin films |
| US8603248B2 (en) * | 2006-02-10 | 2013-12-10 | Veeco Instruments Inc. | System and method for varying wafer surface temperature via wafer-carrier temperature offset |
| US8164028B2 (en) * | 2008-01-18 | 2012-04-24 | Momentive Performance Materials Inc. | Resistance heater |
| US8993939B2 (en) * | 2008-01-18 | 2015-03-31 | Momentive Performance Materials Inc. | Resistance heater |
| JP5200171B2 (ja) * | 2008-08-29 | 2013-05-15 | ビーコ・インストゥルメンツ・インコーポレイテッド | ウエハキャリア、化学蒸着装置、および、ウエハを処理する方法 |
| CN102828169A (zh) * | 2011-06-13 | 2012-12-19 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种载片托盘、托盘装置和结晶膜生长设备 |
| DE102011055061A1 (de) * | 2011-11-04 | 2013-05-08 | Aixtron Se | CVD-Reaktor bzw. Substrathalter für einen CVD-Reaktor |
| KR101928356B1 (ko) * | 2012-02-16 | 2018-12-12 | 엘지이노텍 주식회사 | 반도체 제조 장치 |
| US10316412B2 (en) | 2012-04-18 | 2019-06-11 | Veeco Instruments Inc. | Wafter carrier for chemical vapor deposition systems |
| US10167571B2 (en) | 2013-03-15 | 2019-01-01 | Veeco Instruments Inc. | Wafer carrier having provisions for improving heating uniformity in chemical vapor deposition systems |
| JP2015067878A (ja) * | 2013-09-30 | 2015-04-13 | 東京エレクトロン株式会社 | 熱処理装置及び熱処理方法 |
| SG11201606084RA (en) | 2014-01-27 | 2016-08-30 | Veeco Instr Inc | Wafer carrier having retention pockets with compound radii for chemical vapor deposition systems |
| ITUB20154925A1 (it) * | 2015-11-03 | 2017-05-03 | L P E S P A | Suscettore con recessi asimmetrici, reattore per deposizione epitassiale e metodo di produzione |
| JP7018744B2 (ja) * | 2017-11-24 | 2022-02-14 | 昭和電工株式会社 | ＳｉＣエピタキシャル成長装置 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1360497A (fr) * | 1963-06-12 | 1964-05-08 | Siemens Ag | Procédé pour réaliser des couches cristallines en des substances peu volatiles, notamment des substances semi-conductrices |
| GB1121860A (en) * | 1964-11-21 | 1968-07-31 | Tokushu Denki Kabushiki Kaisha | A heating rotary drum apparatus |
| DE1262244B (de) * | 1964-12-23 | 1968-03-07 | Siemens Ag | Verfahren zum epitaktischen Abscheiden einer kristallinen Schicht, insbesondere aus Halbleitermaterial |
| US3539759A (en) * | 1968-11-08 | 1970-11-10 | Ibm | Susceptor structure in silicon epitaxy |
| NL7103019A (US20100268047A1-20101021-C00003.png) * | 1971-03-06 | 1972-09-08 |
-
1972
- 1972-07-01 NL NL7209297A patent/NL7209297A/xx unknown
-
1973
- 1973-06-22 DE DE2331664A patent/DE2331664C3/de not_active Expired
- 1973-06-26 CA CA175,379A patent/CA995565A/en not_active Expired
- 1973-06-27 US US373944A patent/US3892940A/en not_active Expired - Lifetime
- 1973-06-28 FR FR7323684A patent/FR2190525B1/fr not_active Expired
- 1973-06-28 GB GB3081373A patent/GB1425965A/en not_active Expired
- 1973-06-28 JP JP7232873A patent/JPS5320351B2/ja not_active Expired
- 1973-06-28 IT IT26018/73A patent/IT991007B/it active
- 1973-06-29 BE BE132989A patent/BE801749A/xx unknown
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS585478Y2 (ja) * | 1978-03-24 | 1983-01-29 | 大日本樹脂株式会社 | 農業用地上保温材 |
| JPS5529174U (US20100268047A1-20101021-C00003.png) * | 1978-08-17 | 1980-02-25 | ||
| JPS55110044U (US20100268047A1-20101021-C00003.png) * | 1979-01-30 | 1980-08-01 | ||
| JPS55143455U (US20100268047A1-20101021-C00003.png) * | 1979-03-16 | 1980-10-14 | ||
| JPS5716297B2 (US20100268047A1-20101021-C00003.png) * | 1979-06-18 | 1982-04-03 | ||
| JPS56131322A (en) * | 1980-03-17 | 1981-10-14 | Mitsubishi Monsanto Chem | Cultivation of useful plant |
| JPS56131324A (en) * | 1980-03-17 | 1981-10-14 | Mitsubishi Monsanto Chem | Mulching cultivation |
| JPS56157965U (US20100268047A1-20101021-C00003.png) * | 1980-04-21 | 1981-11-25 | ||
| JPS5820855U (ja) * | 1981-08-04 | 1983-02-08 | 前原 信良 | 太陽熱蓄熱及び放熱体 |
| JPS58122951U (ja) * | 1982-02-17 | 1983-08-22 | 株式会社展建築設計事務所 | 農業用ビニ−ル・ハウス |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2331664B2 (de) | 1978-10-19 |
| NL7209297A (US20100268047A1-20101021-C00003.png) | 1974-01-03 |
| GB1425965A (en) | 1976-02-25 |
| FR2190525B1 (US20100268047A1-20101021-C00003.png) | 1976-09-17 |
| US3892940A (en) | 1975-07-01 |
| IT991007B (it) | 1975-07-30 |
| FR2190525A1 (US20100268047A1-20101021-C00003.png) | 1974-02-01 |
| JPS4945681A (US20100268047A1-20101021-C00003.png) | 1974-05-01 |
| DE2331664C3 (de) | 1979-06-07 |
| BE801749A (fr) | 1974-01-02 |
| DE2331664A1 (de) | 1974-03-14 |
| CA995565A (en) | 1976-08-24 |
