JPS5320194B2 - - Google Patents

Info

Publication number
JPS5320194B2
JPS5320194B2 JP3975972A JP3975972A JPS5320194B2 JP S5320194 B2 JPS5320194 B2 JP S5320194B2 JP 3975972 A JP3975972 A JP 3975972A JP 3975972 A JP3975972 A JP 3975972A JP S5320194 B2 JPS5320194 B2 JP S5320194B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP3975972A
Other languages
Japanese (ja)
Other versions
JPS493580A (en, 2012
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP3975972A priority Critical patent/JPS5320194B2/ja
Priority to GB1869073A priority patent/GB1427014A/en
Priority to NL7305642A priority patent/NL7305642A/xx
Priority to CA169,182A priority patent/CA985794A/en
Priority to FR7314645A priority patent/FR2181075B1/fr
Priority to DE2320579A priority patent/DE2320579C3/de
Priority to IT24130/73A priority patent/IT1049525B/it
Publication of JPS493580A publication Critical patent/JPS493580A/ja
Priority to US05/520,115 priority patent/US4003072A/en
Publication of JPS5320194B2 publication Critical patent/JPS5320194B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H10D62/107—Buried supplementary regions, e.g. buried guard rings 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
  • Element Separation (AREA)
JP3975972A 1972-04-20 1972-04-20 Expired JPS5320194B2 (en, 2012)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP3975972A JPS5320194B2 (en, 2012) 1972-04-20 1972-04-20
GB1869073A GB1427014A (en) 1972-04-20 1973-04-18 Semiconductor devices
NL7305642A NL7305642A (en, 2012) 1972-04-20 1973-04-19
CA169,182A CA985794A (en) 1972-04-20 1973-04-19 Semiconductor device with high voltage breakdown resistance
FR7314645A FR2181075B1 (en, 2012) 1972-04-20 1973-04-20
DE2320579A DE2320579C3 (de) 1972-04-20 1973-04-21 Schutzanordnung für ein planares Halbleiterbauelement
IT24130/73A IT1049525B (it) 1972-04-20 1973-05-15 Dispositivo semiconduttore con resistenza alle tensioni inverse resistenza alle tensioni inverse di rottura di valore notevolmente elevato
US05/520,115 US4003072A (en) 1972-04-20 1974-11-01 Semiconductor device with high voltage breakdown resistance

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3975972A JPS5320194B2 (en, 2012) 1972-04-20 1972-04-20

Publications (2)

Publication Number Publication Date
JPS493580A JPS493580A (en, 2012) 1974-01-12
JPS5320194B2 true JPS5320194B2 (en, 2012) 1978-06-24

Family

ID=12561864

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3975972A Expired JPS5320194B2 (en, 2012) 1972-04-20 1972-04-20

Country Status (7)

Country Link
JP (1) JPS5320194B2 (en, 2012)
CA (1) CA985794A (en, 2012)
DE (1) DE2320579C3 (en, 2012)
FR (1) FR2181075B1 (en, 2012)
GB (1) GB1427014A (en, 2012)
IT (1) IT1049525B (en, 2012)
NL (1) NL7305642A (en, 2012)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH594989A5 (en, 2012) * 1976-09-03 1978-01-31 Bbc Brown Boveri & Cie
CH633907A5 (de) * 1978-10-10 1982-12-31 Bbc Brown Boveri & Cie Leistungshalbleiterbauelement mit zonen-guard-ringen.
DE3832750A1 (de) * 1988-09-27 1990-03-29 Asea Brown Boveri Leistungshalbleiterbauelement
DE3832709A1 (de) * 1988-09-27 1990-03-29 Asea Brown Boveri Thyristor
GB2237930A (en) * 1989-11-01 1991-05-15 Philips Electronic Associated A semiconductor device and method of manufacturing a semiconductor device
US6011298A (en) * 1996-12-31 2000-01-04 Stmicroelectronics, Inc. High voltage termination with buried field-shaping region
DE19930783A1 (de) * 1999-07-03 2001-01-04 Bosch Gmbh Robert Halbleiterbauelement
GB2373634B (en) * 2000-10-31 2004-12-08 Fuji Electric Co Ltd Semiconductor device
GB2403346B (en) * 2000-10-31 2005-05-11 Fuji Electric Co Ltd Semiconductor device
JP5011611B2 (ja) 2001-06-12 2012-08-29 富士電機株式会社 半導体装置
US9236458B2 (en) * 2013-07-11 2016-01-12 Infineon Technologies Ag Bipolar transistor and a method for manufacturing a bipolar transistor
CN106505092B (zh) * 2016-08-18 2024-05-14 全球能源互联网研究院 一种垂直型半导体器件的双面终端结构

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1030050A (en) * 1963-11-13 1966-05-18 Motorola Inc Punchthrough breakdown rectifier
GB1078273A (en) * 1964-10-19 1967-08-09 Sony Corp Semiconductor device
US3391287A (en) * 1965-07-30 1968-07-02 Westinghouse Electric Corp Guard junctions for p-nu junction semiconductor devices
DE1614751A1 (de) * 1967-01-07 1970-12-03 Telefunken Patent Halbleiteranordnung
DE1789043A1 (de) * 1967-10-14 1972-01-05 Sgs Sa Mit Schutzringen versehene Planar-Halbleitervorrichtungen

Also Published As

Publication number Publication date
FR2181075B1 (en, 2012) 1977-12-30
DE2320579C3 (de) 1983-11-10
GB1427014A (en) 1976-03-03
NL7305642A (en, 2012) 1973-10-23
JPS493580A (en, 2012) 1974-01-12
FR2181075A1 (en, 2012) 1973-11-30
DE2320579A1 (de) 1973-11-08
DE2320579B2 (de) 1976-10-28
CA985794A (en) 1976-03-16
IT1049525B (it) 1981-02-10

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