JPS5318390A - Mos type field effect transistor circuit - Google Patents

Mos type field effect transistor circuit

Info

Publication number
JPS5318390A
JPS5318390A JP9245276A JP9245276A JPS5318390A JP S5318390 A JPS5318390 A JP S5318390A JP 9245276 A JP9245276 A JP 9245276A JP 9245276 A JP9245276 A JP 9245276A JP S5318390 A JPS5318390 A JP S5318390A
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
type field
transistor circuit
mos type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9245276A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5519066B2 (enExample
Inventor
Kenji Kawatani
Shigeki Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP9245276A priority Critical patent/JPS5318390A/ja
Priority to US05/821,198 priority patent/US4205263A/en
Publication of JPS5318390A publication Critical patent/JPS5318390A/ja
Publication of JPS5519066B2 publication Critical patent/JPS5519066B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/245—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Control Of Electrical Variables (AREA)
JP9245276A 1976-08-03 1976-08-03 Mos type field effect transistor circuit Granted JPS5318390A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP9245276A JPS5318390A (en) 1976-08-03 1976-08-03 Mos type field effect transistor circuit
US05/821,198 US4205263A (en) 1976-08-03 1977-08-02 Temperature compensated constant current MOS field effective transistor circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9245276A JPS5318390A (en) 1976-08-03 1976-08-03 Mos type field effect transistor circuit

Publications (2)

Publication Number Publication Date
JPS5318390A true JPS5318390A (en) 1978-02-20
JPS5519066B2 JPS5519066B2 (enExample) 1980-05-23

Family

ID=14054782

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9245276A Granted JPS5318390A (en) 1976-08-03 1976-08-03 Mos type field effect transistor circuit

Country Status (2)

Country Link
US (1) US4205263A (enExample)
JP (1) JPS5318390A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4492972A (en) * 1981-08-17 1985-01-08 Honeywell Inc. JFET Monolithic integrated circuit with input bias current temperature compensation

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4323846A (en) * 1979-06-21 1982-04-06 Rockwell International Corporation Radiation hardened MOS voltage generator circuit
US4347476A (en) * 1980-12-04 1982-08-31 Rockwell International Corporation Voltage-temperature insensitive on-chip reference voltage source compatible with VLSI manufacturing techniques
JPS61221812A (ja) * 1985-03-27 1986-10-02 Mitsubishi Electric Corp 電圧発生回路
JP2592234B2 (ja) * 1985-08-16 1997-03-19 富士通株式会社 半導体装置
US6321074B1 (en) 1999-02-18 2001-11-20 Itron, Inc. Apparatus and method for reducing oscillator frequency pulling during AM modulation
JP6205238B2 (ja) 2013-10-25 2017-09-27 エスアイアイ・セミコンダクタ株式会社 基準電圧発生装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4632972B1 (enExample) * 1967-11-13 1971-09-27
US3710271A (en) * 1971-10-12 1973-01-09 United Aircraft Corp Fet driver for capacitive loads
US3806742A (en) * 1972-11-01 1974-04-23 Motorola Inc Mos voltage reference circuit
JPS5051658A (enExample) * 1973-09-07 1975-05-08
JPS5942495B2 (ja) * 1974-12-16 1984-10-15 株式会社東芝 負性抵抗回路
JPS51138848A (en) * 1975-05-28 1976-11-30 Hitachi Ltd Steady current circuit
US4119904A (en) * 1977-04-11 1978-10-10 Honeywell Inc. Low battery voltage detector

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4492972A (en) * 1981-08-17 1985-01-08 Honeywell Inc. JFET Monolithic integrated circuit with input bias current temperature compensation

Also Published As

Publication number Publication date
US4205263A (en) 1980-05-27
JPS5519066B2 (enExample) 1980-05-23

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