JPS5519066B2 - - Google Patents
Info
- Publication number
- JPS5519066B2 JPS5519066B2 JP9245276A JP9245276A JPS5519066B2 JP S5519066 B2 JPS5519066 B2 JP S5519066B2 JP 9245276 A JP9245276 A JP 9245276A JP 9245276 A JP9245276 A JP 9245276A JP S5519066 B2 JPS5519066 B2 JP S5519066B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is DC
- G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
- G05F3/242—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
- G05F3/245—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Control Of Electrical Variables (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9245276A JPS5318390A (en) | 1976-08-03 | 1976-08-03 | Mos type field effect transistor circuit |
| US05/821,198 US4205263A (en) | 1976-08-03 | 1977-08-02 | Temperature compensated constant current MOS field effective transistor circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9245276A JPS5318390A (en) | 1976-08-03 | 1976-08-03 | Mos type field effect transistor circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5318390A JPS5318390A (en) | 1978-02-20 |
| JPS5519066B2 true JPS5519066B2 (enExample) | 1980-05-23 |
Family
ID=14054782
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9245276A Granted JPS5318390A (en) | 1976-08-03 | 1976-08-03 | Mos type field effect transistor circuit |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US4205263A (enExample) |
| JP (1) | JPS5318390A (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4323846A (en) * | 1979-06-21 | 1982-04-06 | Rockwell International Corporation | Radiation hardened MOS voltage generator circuit |
| US4347476A (en) * | 1980-12-04 | 1982-08-31 | Rockwell International Corporation | Voltage-temperature insensitive on-chip reference voltage source compatible with VLSI manufacturing techniques |
| US4492972A (en) * | 1981-08-17 | 1985-01-08 | Honeywell Inc. | JFET Monolithic integrated circuit with input bias current temperature compensation |
| JPS61221812A (ja) * | 1985-03-27 | 1986-10-02 | Mitsubishi Electric Corp | 電圧発生回路 |
| JP2592234B2 (ja) * | 1985-08-16 | 1997-03-19 | 富士通株式会社 | 半導体装置 |
| US6321074B1 (en) | 1999-02-18 | 2001-11-20 | Itron, Inc. | Apparatus and method for reducing oscillator frequency pulling during AM modulation |
| JP6205238B2 (ja) | 2013-10-25 | 2017-09-27 | エスアイアイ・セミコンダクタ株式会社 | 基準電圧発生装置 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4632972B1 (enExample) * | 1967-11-13 | 1971-09-27 | ||
| US3710271A (en) * | 1971-10-12 | 1973-01-09 | United Aircraft Corp | Fet driver for capacitive loads |
| US3806742A (en) * | 1972-11-01 | 1974-04-23 | Motorola Inc | Mos voltage reference circuit |
| JPS5051658A (enExample) * | 1973-09-07 | 1975-05-08 | ||
| JPS5942495B2 (ja) * | 1974-12-16 | 1984-10-15 | 株式会社東芝 | 負性抵抗回路 |
| JPS51138848A (en) * | 1975-05-28 | 1976-11-30 | Hitachi Ltd | Steady current circuit |
| US4119904A (en) * | 1977-04-11 | 1978-10-10 | Honeywell Inc. | Low battery voltage detector |
-
1976
- 1976-08-03 JP JP9245276A patent/JPS5318390A/ja active Granted
-
1977
- 1977-08-02 US US05/821,198 patent/US4205263A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US4205263A (en) | 1980-05-27 |
| JPS5318390A (en) | 1978-02-20 |