JPS53141588A - Field effect transistor - Google Patents

Field effect transistor

Info

Publication number
JPS53141588A
JPS53141588A JP5671777A JP5671777A JPS53141588A JP S53141588 A JPS53141588 A JP S53141588A JP 5671777 A JP5671777 A JP 5671777A JP 5671777 A JP5671777 A JP 5671777A JP S53141588 A JPS53141588 A JP S53141588A
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
drain region
impurity concentration
deciding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5671777A
Other languages
English (en)
Inventor
Naofumi Tsuzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP5671777A priority Critical patent/JPS53141588A/ja
Publication of JPS53141588A publication Critical patent/JPS53141588A/ja
Pending legal-status Critical Current

Links

JP5671777A 1977-05-16 1977-05-16 Field effect transistor Pending JPS53141588A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5671777A JPS53141588A (en) 1977-05-16 1977-05-16 Field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5671777A JPS53141588A (en) 1977-05-16 1977-05-16 Field effect transistor

Publications (1)

Publication Number Publication Date
JPS53141588A true JPS53141588A (en) 1978-12-09

Family

ID=13035227

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5671777A Pending JPS53141588A (en) 1977-05-16 1977-05-16 Field effect transistor

Country Status (1)

Country Link
JP (1) JPS53141588A (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6189674A (ja) * 1984-10-09 1986-05-07 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JPH02230130A (ja) * 1989-12-15 1990-09-12 Semiconductor Energy Lab Co Ltd 液晶電気光学装置
US5047812A (en) * 1989-02-27 1991-09-10 Motorola, Inc. Insulated gate field effect device
JPH05257163A (ja) * 1991-08-09 1993-10-08 Semiconductor Energy Lab Co Ltd 複合半導体装置
JPH05283698A (ja) * 1992-02-07 1993-10-29 Semiconductor Energy Lab Co Ltd 液晶電気光学装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6189674A (ja) * 1984-10-09 1986-05-07 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
US5047812A (en) * 1989-02-27 1991-09-10 Motorola, Inc. Insulated gate field effect device
JPH02230130A (ja) * 1989-12-15 1990-09-12 Semiconductor Energy Lab Co Ltd 液晶電気光学装置
JPH05257163A (ja) * 1991-08-09 1993-10-08 Semiconductor Energy Lab Co Ltd 複合半導体装置
JPH05283698A (ja) * 1992-02-07 1993-10-29 Semiconductor Energy Lab Co Ltd 液晶電気光学装置

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