JPS53123680A - Mosfet ic and method of producing same - Google Patents

Mosfet ic and method of producing same

Info

Publication number
JPS53123680A
JPS53123680A JP3801878A JP3801878A JPS53123680A JP S53123680 A JPS53123680 A JP S53123680A JP 3801878 A JP3801878 A JP 3801878A JP 3801878 A JP3801878 A JP 3801878A JP S53123680 A JPS53123680 A JP S53123680A
Authority
JP
Japan
Prior art keywords
mosfet
producing same
producing
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3801878A
Other languages
English (en)
Other versions
JPS6237548B2 (ja
Inventor
Kurein Toomasu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Semiconductor Corp
Original Assignee
National Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/783,914 external-priority patent/US4104784A/en
Application filed by National Semiconductor Corp filed Critical National Semiconductor Corp
Publication of JPS53123680A publication Critical patent/JPS53123680A/ja
Publication of JPS6237548B2 publication Critical patent/JPS6237548B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/0883—Combination of depletion and enhancement field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8236—Combination of enhancement and depletion transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP3801878A 1977-04-01 1978-03-31 Mosfet ic and method of producing same Granted JPS53123680A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/783,914 US4104784A (en) 1976-06-21 1977-04-01 Manufacturing a low voltage n-channel MOSFET device

Publications (2)

Publication Number Publication Date
JPS53123680A true JPS53123680A (en) 1978-10-28
JPS6237548B2 JPS6237548B2 (ja) 1987-08-13

Family

ID=25130800

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3801878A Granted JPS53123680A (en) 1977-04-01 1978-03-31 Mosfet ic and method of producing same

Country Status (2)

Country Link
JP (1) JPS53123680A (ja)
DE (1) DE2813566A1 (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS564283A (en) * 1979-06-25 1981-01-17 Toshiba Corp Semiconductor device
JPS5670664A (en) * 1979-11-13 1981-06-12 Nec Corp Manufacture of semiconductor device
JPS5698869A (en) * 1980-01-10 1981-08-08 Toshiba Corp Preparation of semiconductor device
JPS56100478A (en) * 1980-01-16 1981-08-12 Toshiba Corp Semiconductor device and manufacture thereof
JPS6254460A (ja) * 1985-09-03 1987-03-10 Fujitsu Ltd 半導体装置の製造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3131050A1 (de) * 1981-08-05 1983-02-24 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von integrierten mos-feldeffekttransistoren unter verwendung einer aus phosphorsilikatglas bestehenden obewrflaechenschicht auf dem zwischenoxid zwischen polysiliziumebene und metall-leiterbahnebene

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5134269A (ja) * 1974-09-17 1976-03-23 Mitsubishi Rayon Co Hanikamushinzaiyoshiito
JPS5135835A (ja) * 1974-09-24 1976-03-26 Hitachi Ltd Gasuujokifukugosaikurupuranto no seigyohoho

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5134269A (ja) * 1974-09-17 1976-03-23 Mitsubishi Rayon Co Hanikamushinzaiyoshiito
JPS5135835A (ja) * 1974-09-24 1976-03-26 Hitachi Ltd Gasuujokifukugosaikurupuranto no seigyohoho

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS564283A (en) * 1979-06-25 1981-01-17 Toshiba Corp Semiconductor device
JPS5670664A (en) * 1979-11-13 1981-06-12 Nec Corp Manufacture of semiconductor device
JPH0338734B2 (ja) * 1979-11-13 1991-06-11 Nippon Electric Co
JPS5698869A (en) * 1980-01-10 1981-08-08 Toshiba Corp Preparation of semiconductor device
JPS56100478A (en) * 1980-01-16 1981-08-12 Toshiba Corp Semiconductor device and manufacture thereof
JPS6254460A (ja) * 1985-09-03 1987-03-10 Fujitsu Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
DE2813566A1 (de) 1978-10-05
JPS6237548B2 (ja) 1987-08-13

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