JPS53122380A - Manufacture of semiconductor logic circuit device electrostatic induction type - Google Patents
Manufacture of semiconductor logic circuit device electrostatic induction typeInfo
- Publication number
- JPS53122380A JPS53122380A JP3739077A JP3739077A JPS53122380A JP S53122380 A JPS53122380 A JP S53122380A JP 3739077 A JP3739077 A JP 3739077A JP 3739077 A JP3739077 A JP 3739077A JP S53122380 A JPS53122380 A JP S53122380A
- Authority
- JP
- Japan
- Prior art keywords
- manufacture
- logic circuit
- circuit device
- induction type
- electrostatic induction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000006698 induction Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 238000010276 construction Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
- H01L27/0225—Charge injection in static induction transistor logic structures [SITL]
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
- Logic Circuits (AREA)
Abstract
PURPOSE:To increase the interlinking performance, by placing a clear boundary between the cahnnel domain ahving a short channel length and high specific resistivity and the channel, and by reducing the conductive resistance of FET constituting the circuit as the gate construction having a large effective channel diameter.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3739077A JPS53122380A (en) | 1977-03-31 | 1977-03-31 | Manufacture of semiconductor logic circuit device electrostatic induction type |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3739077A JPS53122380A (en) | 1977-03-31 | 1977-03-31 | Manufacture of semiconductor logic circuit device electrostatic induction type |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS53122380A true JPS53122380A (en) | 1978-10-25 |
JPS5619738B2 JPS5619738B2 (en) | 1981-05-09 |
Family
ID=12496192
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3739077A Granted JPS53122380A (en) | 1977-03-31 | 1977-03-31 | Manufacture of semiconductor logic circuit device electrostatic induction type |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53122380A (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58101399A (en) * | 1981-12-14 | 1983-06-16 | 株式会社東芝 | Fluid equipment monitor |
-
1977
- 1977-03-31 JP JP3739077A patent/JPS53122380A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5619738B2 (en) | 1981-05-09 |
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