JPS53120392A - Compound type semiconductor laser - Google Patents

Compound type semiconductor laser

Info

Publication number
JPS53120392A
JPS53120392A JP3472377A JP3472377A JPS53120392A JP S53120392 A JPS53120392 A JP S53120392A JP 3472377 A JP3472377 A JP 3472377A JP 3472377 A JP3472377 A JP 3472377A JP S53120392 A JPS53120392 A JP S53120392A
Authority
JP
Japan
Prior art keywords
type semiconductor
semiconductor laser
compound type
laser
modulation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3472377A
Other languages
Japanese (ja)
Other versions
JPS576275B2 (en
Inventor
Yasuo Seki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP3472377A priority Critical patent/JPS53120392A/en
Publication of JPS53120392A publication Critical patent/JPS53120392A/en
Publication of JPS576275B2 publication Critical patent/JPS576275B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To integrally form a laser and a light modulator and reduce modulation power consumption by disposing a modulation electrode to one of Bragg reflectors of a distribution Bragg reflection type semiconductor, isolating and insulating excitation electrode electrically from this and making voltage applications respectively independent.
JP3472377A 1977-03-30 1977-03-30 Compound type semiconductor laser Granted JPS53120392A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3472377A JPS53120392A (en) 1977-03-30 1977-03-30 Compound type semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3472377A JPS53120392A (en) 1977-03-30 1977-03-30 Compound type semiconductor laser

Publications (2)

Publication Number Publication Date
JPS53120392A true JPS53120392A (en) 1978-10-20
JPS576275B2 JPS576275B2 (en) 1982-02-04

Family

ID=12422236

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3472377A Granted JPS53120392A (en) 1977-03-30 1977-03-30 Compound type semiconductor laser

Country Status (1)

Country Link
JP (1) JPS53120392A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5632785A (en) * 1979-08-25 1981-04-02 Nippon Telegr & Teleph Corp <Ntt> Light amplifier
JPS56116683A (en) * 1980-02-20 1981-09-12 Tokyo Inst Of Technol Distribution reflecting type semiconductor laser having tuning and requency-modulating mechanism
JPS5914690A (en) * 1982-07-16 1984-01-25 Nec Corp Semiconductor laser
JPS60133782A (en) * 1983-12-21 1985-07-16 Nec Corp Semiconductor laser

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5189875U (en) * 1975-01-16 1976-07-19
JPS5190770U (en) * 1975-01-17 1976-07-20

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5189875U (en) * 1975-01-16 1976-07-19
JPS5190770U (en) * 1975-01-17 1976-07-20

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5632785A (en) * 1979-08-25 1981-04-02 Nippon Telegr & Teleph Corp <Ntt> Light amplifier
JPS56116683A (en) * 1980-02-20 1981-09-12 Tokyo Inst Of Technol Distribution reflecting type semiconductor laser having tuning and requency-modulating mechanism
JPS5914690A (en) * 1982-07-16 1984-01-25 Nec Corp Semiconductor laser
JPH0552072B2 (en) * 1982-07-16 1993-08-04 Nippon Electric Co
JPS60133782A (en) * 1983-12-21 1985-07-16 Nec Corp Semiconductor laser

Also Published As

Publication number Publication date
JPS576275B2 (en) 1982-02-04

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