JPS53118379A - Charge coupling element - Google Patents

Charge coupling element

Info

Publication number
JPS53118379A
JPS53118379A JP3372477A JP3372477A JPS53118379A JP S53118379 A JPS53118379 A JP S53118379A JP 3372477 A JP3372477 A JP 3372477A JP 3372477 A JP3372477 A JP 3372477A JP S53118379 A JPS53118379 A JP S53118379A
Authority
JP
Japan
Prior art keywords
coupling element
charge coupling
region
impurity density
impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3372477A
Other languages
Japanese (ja)
Inventor
Tsuyoshi Tanahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3372477A priority Critical patent/JPS53118379A/en
Publication of JPS53118379A publication Critical patent/JPS53118379A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823406—Combination of charge coupled devices, i.e. CCD, or BBD

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:The conductive impurity is injected to the semiconductor substrate featuring a surface region of the high-impurity density to turn the charge storage region or the transfer region into a low impurity density. As a result, an ample area is secured for these regions to obtain stable charge transfer properties.
JP3372477A 1977-03-25 1977-03-25 Charge coupling element Pending JPS53118379A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3372477A JPS53118379A (en) 1977-03-25 1977-03-25 Charge coupling element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3372477A JPS53118379A (en) 1977-03-25 1977-03-25 Charge coupling element

Publications (1)

Publication Number Publication Date
JPS53118379A true JPS53118379A (en) 1978-10-16

Family

ID=12394337

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3372477A Pending JPS53118379A (en) 1977-03-25 1977-03-25 Charge coupling element

Country Status (1)

Country Link
JP (1) JPS53118379A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5385860A (en) * 1991-11-26 1995-01-31 Sharp Kabushiki Kaisha Charge transfer device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5385860A (en) * 1991-11-26 1995-01-31 Sharp Kabushiki Kaisha Charge transfer device

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