JPS53102310A - Heat conducting base plates - Google Patents
Heat conducting base platesInfo
- Publication number
- JPS53102310A JPS53102310A JP1603477A JP1603477A JPS53102310A JP S53102310 A JPS53102310 A JP S53102310A JP 1603477 A JP1603477 A JP 1603477A JP 1603477 A JP1603477 A JP 1603477A JP S53102310 A JPS53102310 A JP S53102310A
- Authority
- JP
- Japan
- Prior art keywords
- heat conducting
- base plates
- conducting base
- plates
- heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Laminated Bodies (AREA)
- Ceramic Products (AREA)
- Powder Metallurgy (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1603477A JPS5811390B2 (en) | 1977-02-18 | 1977-02-18 | Method of manufacturing thermally conductive substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1603477A JPS5811390B2 (en) | 1977-02-18 | 1977-02-18 | Method of manufacturing thermally conductive substrate |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS53102310A true JPS53102310A (en) | 1978-09-06 |
JPS5811390B2 JPS5811390B2 (en) | 1983-03-02 |
Family
ID=11905280
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1603477A Expired JPS5811390B2 (en) | 1977-02-18 | 1977-02-18 | Method of manufacturing thermally conductive substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5811390B2 (en) |
Cited By (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5848926A (en) * | 1981-09-18 | 1983-03-23 | Hitachi Ltd | Insulated type semiconductor device |
JPS58183244A (en) * | 1982-04-22 | 1983-10-26 | 工業技術院長 | Heat-resistant composite material |
JPS5946036A (en) * | 1982-09-09 | 1984-03-15 | Hitachi Ltd | Insulating type semiconductor device |
JPS59102876A (en) * | 1982-11-29 | 1984-06-14 | 株式会社東芝 | Ceramics metal bonding method |
JPS59121175A (en) * | 1982-12-28 | 1984-07-13 | 株式会社東芝 | Manufacture of heat radiator |
JPS6032343A (en) * | 1983-08-02 | 1985-02-19 | Toshiba Corp | Power semiconductor module substrate |
JPS60178647A (en) * | 1984-02-27 | 1985-09-12 | Toshiba Corp | Semiconductor device |
JPS617647A (en) * | 1984-06-21 | 1986-01-14 | Toshiba Corp | Circuit substrate |
JPS6135528A (en) * | 1984-07-27 | 1986-02-20 | Nec Corp | Semiconductor device |
JPS6138941U (en) * | 1984-08-10 | 1986-03-11 | イビデン株式会社 | ceramic substrate |
JPS6184089A (en) * | 1984-10-01 | 1986-04-28 | 株式会社東芝 | High heat conductive circuit board |
JPS6184036A (en) * | 1984-09-30 | 1986-04-28 | Toshiba Corp | Heat-conductive aln ceramics substrate |
JPS61119051A (en) * | 1984-11-15 | 1986-06-06 | Nec Corp | Semiconductor device |
EP0235682A2 (en) * | 1986-02-20 | 1987-09-09 | Kabushiki Kaisha Toshiba | Aluminium nitride sintered body having conductive metallized layer |
JPS62232149A (en) * | 1986-03-31 | 1987-10-12 | Ibiden Co Ltd | Interconnection substrate comprising sintered body of aluminum nitride and manufacture thereof |
JPS6351662A (en) * | 1986-08-21 | 1988-03-04 | Toshiba Corp | Aluminum nitride substrate and manufacture thereof |
JPS63313842A (en) * | 1988-04-28 | 1988-12-21 | Hitachi Ltd | Substrate for mounting semiconductor device and semiconductor device |
JPH02199075A (en) * | 1989-12-15 | 1990-08-07 | Toshiba Corp | Joined product of ceramic and metal |
WO1993007306A1 (en) * | 1991-10-03 | 1993-04-15 | Motorola, Inc. | Adherent metal coating for aluminum nitride surfaces |
US5529852A (en) * | 1987-01-26 | 1996-06-25 | Sumitomo Electric Industries, Ltd. | Aluminum nitride sintered body having a metallized coating layer on its surface |
JP2004162147A (en) * | 2002-11-15 | 2004-06-10 | Plasma Giken Kogyo Kk | Aluminum nitride sintered body having thermal-sprayed coating |
JP2018090488A (en) * | 2013-03-07 | 2018-06-14 | 国立研究開発法人産業技術総合研究所 | Method for joining ceramic member and aluminum member, and joined body |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06387B2 (en) * | 1986-05-29 | 1994-01-05 | 富士通株式会社 | Glass / ceramic substrate |
-
1977
- 1977-02-18 JP JP1603477A patent/JPS5811390B2/en not_active Expired
Cited By (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5848926A (en) * | 1981-09-18 | 1983-03-23 | Hitachi Ltd | Insulated type semiconductor device |
JPS6155863B2 (en) * | 1982-04-22 | 1986-11-29 | Kogyo Gijutsuin | |
JPS58183244A (en) * | 1982-04-22 | 1983-10-26 | 工業技術院長 | Heat-resistant composite material |
JPS5946036A (en) * | 1982-09-09 | 1984-03-15 | Hitachi Ltd | Insulating type semiconductor device |
JPS59102876A (en) * | 1982-11-29 | 1984-06-14 | 株式会社東芝 | Ceramics metal bonding method |
JPH0240631B2 (en) * | 1982-11-29 | 1990-09-12 | Tokyo Shibaura Electric Co | |
JPS59121175A (en) * | 1982-12-28 | 1984-07-13 | 株式会社東芝 | Manufacture of heat radiator |
JPH0359036B2 (en) * | 1982-12-28 | 1991-09-09 | Tokyo Shibaura Electric Co | |
JPS6032343A (en) * | 1983-08-02 | 1985-02-19 | Toshiba Corp | Power semiconductor module substrate |
JPH0586662B2 (en) * | 1983-08-02 | 1993-12-13 | Tokyo Shibaura Electric Co | |
JPS60178647A (en) * | 1984-02-27 | 1985-09-12 | Toshiba Corp | Semiconductor device |
JPS617647A (en) * | 1984-06-21 | 1986-01-14 | Toshiba Corp | Circuit substrate |
JPS6135528A (en) * | 1984-07-27 | 1986-02-20 | Nec Corp | Semiconductor device |
JPH0315828B2 (en) * | 1984-07-27 | 1991-03-04 | Nippon Electric Co | |
JPS6138941U (en) * | 1984-08-10 | 1986-03-11 | イビデン株式会社 | ceramic substrate |
JPS6184036A (en) * | 1984-09-30 | 1986-04-28 | Toshiba Corp | Heat-conductive aln ceramics substrate |
JPS6184089A (en) * | 1984-10-01 | 1986-04-28 | 株式会社東芝 | High heat conductive circuit board |
JPS61119051A (en) * | 1984-11-15 | 1986-06-06 | Nec Corp | Semiconductor device |
EP0235682A2 (en) * | 1986-02-20 | 1987-09-09 | Kabushiki Kaisha Toshiba | Aluminium nitride sintered body having conductive metallized layer |
JPH0680747B2 (en) * | 1986-03-31 | 1994-10-12 | イビデン株式会社 | Wiring board made of aluminum nitride sintered material and method for manufacturing the same |
JPS62232149A (en) * | 1986-03-31 | 1987-10-12 | Ibiden Co Ltd | Interconnection substrate comprising sintered body of aluminum nitride and manufacture thereof |
JPS6351662A (en) * | 1986-08-21 | 1988-03-04 | Toshiba Corp | Aluminum nitride substrate and manufacture thereof |
JPH0459779B2 (en) * | 1986-08-21 | 1992-09-24 | Tokyo Shibaura Electric Co | |
US5529852A (en) * | 1987-01-26 | 1996-06-25 | Sumitomo Electric Industries, Ltd. | Aluminum nitride sintered body having a metallized coating layer on its surface |
JPH0470776B2 (en) * | 1988-04-28 | 1992-11-11 | Hitachi Ltd | |
JPS63313842A (en) * | 1988-04-28 | 1988-12-21 | Hitachi Ltd | Substrate for mounting semiconductor device and semiconductor device |
JPH0460946B2 (en) * | 1989-12-15 | 1992-09-29 | Tokyo Shibaura Electric Co | |
JPH02199075A (en) * | 1989-12-15 | 1990-08-07 | Toshiba Corp | Joined product of ceramic and metal |
WO1993007306A1 (en) * | 1991-10-03 | 1993-04-15 | Motorola, Inc. | Adherent metal coating for aluminum nitride surfaces |
US5217589A (en) * | 1991-10-03 | 1993-06-08 | Motorola, Inc. | Method of adherent metal coating for aluminum nitride surfaces |
JP2004162147A (en) * | 2002-11-15 | 2004-06-10 | Plasma Giken Kogyo Kk | Aluminum nitride sintered body having thermal-sprayed coating |
JP2018090488A (en) * | 2013-03-07 | 2018-06-14 | 国立研究開発法人産業技術総合研究所 | Method for joining ceramic member and aluminum member, and joined body |
Also Published As
Publication number | Publication date |
---|---|
JPS5811390B2 (en) | 1983-03-02 |
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