JPS6184036A - Heat-conductive aln ceramics substrate - Google Patents
Heat-conductive aln ceramics substrateInfo
- Publication number
- JPS6184036A JPS6184036A JP59204708A JP20470884A JPS6184036A JP S6184036 A JPS6184036 A JP S6184036A JP 59204708 A JP59204708 A JP 59204708A JP 20470884 A JP20470884 A JP 20470884A JP S6184036 A JPS6184036 A JP S6184036A
- Authority
- JP
- Japan
- Prior art keywords
- aln
- substrate
- heat
- thermal conductivity
- aln ceramics
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 24
- 239000000919 ceramic Substances 0.000 title claims abstract description 17
- 239000013078 crystal Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 abstract description 3
- 239000000843 powder Substances 0.000 abstract description 3
- 238000005245 sintering Methods 0.000 abstract description 3
- 239000000203 mixture Substances 0.000 abstract description 2
- 230000009970 fire resistant effect Effects 0.000 abstract 1
- 239000004519 grease Substances 0.000 abstract 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/581—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on aluminium nitride
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
- H01L21/4807—Ceramic parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Ceramic Products (AREA)
Abstract
Description
【発明の詳細な説明】 ［発明の技術分野］ 本発明は熱伝導性Δ℃Ｎセラミックス基板に関する。[Detailed description of the invention] [Technical field of invention] The present invention relates to a thermally conductive ΔCN ceramic substrate.
［発明の技術的前頭とその問題点］
電子別器の小形化、高性能化の要求に従い、これらに用
いられる半導体も高集積化、高出力化の方向に急速に進
んでいる。このため半導体を実装する基板もより熱伝導
性の大きいものが必要とされ、従来のへλ２０３セラミ
ックス基板よりも熱伝導性の大きいＡβＩＮセラミック
ス基板が注目をあびている。[Technical Overview of the Invention and Its Problems] In accordance with the demand for smaller electronic devices and higher performance, the semiconductors used in these devices are also rapidly progressing toward higher integration and higher output. For this reason, the substrate on which the semiconductor is mounted is required to have higher thermal conductivity, and AβIN ceramic substrates, which have higher thermal conductivity than the conventional λ203 ceramic substrates, are attracting attention.
ところでこのＡｌＮセラミックス基板は”７４ ’７条
件によっては熱伝導性の低いものが得られるという問題
があった。However, this AlN ceramic substrate had a problem in that it could have low thermal conductivity depending on the ``74''7 conditions.
［発明の目的コ
本発明はこのような問題に対処してなされたもので、熱
伝導性の大きいＡＡＮｔ７ラミツクス基板を提供するこ
とを目的とする。[Purpose of the Invention] The present invention has been made in response to such problems, and an object thereof is to provide an AANt7 laminated substrate with high thermal conductivity.
［発明の概要］
本発明は、前述の問題が、原料処理や成形工程および焼
成環境において混入するＳｌやＯなとの不純物により焼
結体結晶組成の一部に熱伝導性を阻害する結晶相が生成
することに起因すること、しかしながらこの結晶相は基
板の板厚の１／′３以内に生じた場合は熱伝導性を阻害
することが少ないことという知見に基づいてなされたも
ので、縛 ′度９５％以上のＡｊ２Ｎセラミックス基板
であって、ＡβＮポリタイプからなる針状結晶の析出部
分が基板板厚の１／３以内であることを特徴としている
。[Summary of the Invention] The present invention solves the above-mentioned problem by forming a crystal phase that inhibits thermal conductivity in a part of the crystal composition of a sintered body due to impurities such as Sl and O mixed in during raw material processing, molding process, and firing environment. This was done based on the knowledge that this crystalline phase is caused by the formation of The present invention is an Aj2N ceramic substrate with an AβN polytype of 95% or more, and is characterized in that the precipitated portion of needle-like crystals made of AβN polytype is within 1/3 of the substrate thickness.
本発明においてＡｌＮセラミックスの純度は高熱伝導性
の点から９５％以上が好ましく、その他焼結助剤として
かつ熱伝導性を向上させるために０．１〜５重間％のＹ
２０３を添加づ゛るのが好ましい。In the present invention, the purity of the AlN ceramics is preferably 95% or more from the viewpoint of high thermal conductivity, and 0.1 to 5 weight% of Y is used as a sintering aid and to improve thermal conductivity.
Preferably, 203 is added.
ＡｌＮポリタイプからなる針状結晶は通常Ａ２−３ｉ−
０−Ｎの化学構造を有し、その大きさは長さが１０μｍ
以上、長さと幅の比率（長さ７幅）が３以上である。Acicular crystals consisting of AlN polytype are usually A2-3i-
It has a 0-N chemical structure and its size is 10 μm in length.
As described above, the length to width ratio (length 7 width) is 3 or more.
このＡＪ２Ｎポリタイプからなる針状結晶１は図面に示
すように片面のみに生じる場合はＡβＮセラミックス基
板２の板厚ｔの１／３の深さ以内に生成されている必要
があり、両面の場合は総量で１／３ｔ＠限度とする。な
お図中符号３はＡβＮの結晶粒子を示す。If the needle-like crystals 1 made of the AJ2N polytype occur on only one side as shown in the drawing, they must be formed within a depth of 1/3 of the thickness t of the AβN ceramic substrate 2, and in the case of both sides. The total amount shall be limited to 1/3 t@. Note that the reference numeral 3 in the figure indicates a crystal particle of AβN.
このようなＡβＮセラミックス基板を製造するには高純
度のＡｌＮ粉末を使用して成形し、この成形体を脱脂し
たのちそのまま不活性雰囲気中で焼成するのではなく耐
火性容器にいったん収納、密閉して窒素ガス、アルゴン
ガスなどの不活性雰囲気中で１，６００〜ｉ、ａｓｏ℃
に加熱して焼成する方法を採用する。To manufacture such an AβN ceramic substrate, high-purity AlN powder is used to mold it, and the molded body is degreased and then instead of being fired in an inert atmosphere, it is stored in a fireproof container and sealed. in an inert atmosphere such as nitrogen gas or argon gas at 1,600 - i, aso℃.
A method of heating and firing is adopted.
［発明の実施例］ 次に本発明の実施例について説明する。[Embodiments of the invention] Next, examples of the present invention will be described.
実施例
Ｙ２０３を３重量％含むＡβＮ粉末１００部にバインダ
としてポリビニルブチラール樹脂１０部、溶剤２５部、
可塑剤３部を混合し、ドクターブレード法によって厚さ
０．５ｎ＋＋ｎの未焼成シートを得た。このシートを一
片が６０ｍｍの正方形に裁断し、窒素ガス流中で約７０
０°Ｃまで昇温して脱脂した。これを直径９０ｍ＋＋＋
、厚さ２ｍｍのＡβＮセラミックス製円板上に載置し、
さらに内径１００ｍｍ、高さ１２ｍｍの高純度Ａβ２０
３セラミックス製円筒状部材および蓋で田閉した。この
状態でカーボン発熱体を使用した電気炉に挿入し、窒素
ガス雰囲気下で約１ 、８００℃に１時間加熱して焼成
を行なった。100 parts of AβN powder containing 3% by weight of Example Y203, 10 parts of polyvinyl butyral resin as a binder, 25 parts of a solvent,
Three parts of plasticizer were mixed and a green sheet with a thickness of 0.5n++n was obtained by doctor blade method. This sheet was cut into square pieces of 60 mm each, and about 70 mm was cut in a nitrogen gas stream.
The temperature was raised to 0°C and defatted. This is 90m+++ in diameter
, placed on a 2 mm thick AβN ceramic disk,
In addition, high purity Aβ20 with an inner diameter of 100 mm and a height of 12 mm.
3. It was closed with a ceramic cylindrical member and a lid. In this state, it was inserted into an electric furnace using a carbon heating element, and fired at about 1,800° C. for 1 hour in a nitrogen gas atmosphere.
このようにして得られたＡＪ２Ｎセラミックス基板の厚
さ方向の断面を走査電子顕微鏡で観察したところ、針状
結晶の生成は１１５の深さまでにおさえられており、熱
伝導率は８０〜１００Ｗ／ ｍ −Ｋであった。また針
状結晶はＡλ−３ｉ−０−Ｎを成分とするＡｌＮポリタ
イプであった。When the cross section of the thus obtained AJ2N ceramic substrate in the thickness direction was observed using a scanning electron microscope, the formation of needle-shaped crystals was suppressed to a depth of 115 mm, and the thermal conductivity was 80 to 100 W/m. -K. Further, the needle-like crystals were an AlN polytype containing Aλ-3i-0-N as a component.
一方前述の未焼成シーｉ・を密閉しないでそのまま同様
に焼成し、得られた基板を間諜に走査電子顕微鏡でＩＡ
察したところ、針状結晶は１／２の深さまで生成してお
り、また熱伝導率は３０〜５０Ｗ／ｍ−にであった。On the other hand, the above-mentioned unfired substrate was fired in the same manner without being sealed, and the obtained substrate was subjected to IA using a scanning electron microscope.
It was found that needle-shaped crystals were formed to a depth of 1/2, and the thermal conductivity was 30 to 50 W/m-.
［発明の効果］
以上説明したように本発明の基板は熱伝導性を阻害する
針状結晶の生成が限定されているので、ＡｌＮ本来の優
れた熱伝導性を発揮することができる。[Effects of the Invention] As explained above, since the substrate of the present invention has limited formation of needle-like crystals that inhibit thermal conductivity, it can exhibit the excellent thermal conductivity inherent to AlN.
図面は本発明基板のｌｌｌ’ｉ面を模式的に示す図であ
る。The drawing is a diagram schematically showing the lll'i plane of the substrate of the present invention.
Claims (1)
ＡｌＮポリタイプからなる針状結晶の析出部分が基板板
厚の１／３以内であることを特徴とする熱伝導性ＡｌＮ
セラミックス基板。An AlN ceramic substrate with a purity of 95% or more,
A thermally conductive AlN characterized in that a precipitated part of needle-like crystals made of an AlN polytype is within 1/3 of the substrate thickness.
Ceramic substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59204708A JPS6184036A (en) | 1984-09-30 | 1984-09-30 | Heat-conductive aln ceramics substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59204708A JPS6184036A (en) | 1984-09-30 | 1984-09-30 | Heat-conductive aln ceramics substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6184036A true JPS6184036A (en) | 1986-04-28 |
Family
ID=16494994
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59204708A Pending JPS6184036A (en) | 1984-09-30 | 1984-09-30 | Heat-conductive aln ceramics substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6184036A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0226872A (en) * | 1988-07-12 | 1990-01-29 | Sumitomo Electric Ind Ltd | Window for transmitting high-frequency wave |
| US5683529A (en) * | 1991-05-21 | 1997-11-04 | Fujitsu Limited | Process of producing aluminum nitride multiple-layer circuit board |
| WO2022030637A1 (en) * | 2020-08-07 | 2022-02-10 | 株式会社U-Map | Ceramic substrate, aln single crystal, aln whisker, and aln whisker composite |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53102310A (en) * | 1977-02-18 | 1978-09-06 | Tokyo Shibaura Electric Co | Heat conducting base plates |
| JPS54100410A (en) * | 1978-01-24 | 1979-08-08 | Tokyo Shibaura Electric Co | Ceramic heat conductor |
-
1984
- 1984-09-30 JP JP59204708A patent/JPS6184036A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53102310A (en) * | 1977-02-18 | 1978-09-06 | Tokyo Shibaura Electric Co | Heat conducting base plates |
| JPS54100410A (en) * | 1978-01-24 | 1979-08-08 | Tokyo Shibaura Electric Co | Ceramic heat conductor |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0226872A (en) * | 1988-07-12 | 1990-01-29 | Sumitomo Electric Ind Ltd | Window for transmitting high-frequency wave |
| US5683529A (en) * | 1991-05-21 | 1997-11-04 | Fujitsu Limited | Process of producing aluminum nitride multiple-layer circuit board |
| WO2022030637A1 (en) * | 2020-08-07 | 2022-02-10 | 株式会社U-Map | Ceramic substrate, aln single crystal, aln whisker, and aln whisker composite |
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