JPS529353A - Solid-state oscillator - Google Patents

Solid-state oscillator

Info

Publication number
JPS529353A
JPS529353A JP8551875A JP8551875A JPS529353A JP S529353 A JPS529353 A JP S529353A JP 8551875 A JP8551875 A JP 8551875A JP 8551875 A JP8551875 A JP 8551875A JP S529353 A JPS529353 A JP S529353A
Authority
JP
Japan
Prior art keywords
solid
state oscillator
oscillator
state
solidstate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8551875A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5626165B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Hiroshi Saka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP8551875A priority Critical patent/JPS529353A/ja
Publication of JPS529353A publication Critical patent/JPS529353A/ja
Publication of JPS5626165B2 publication Critical patent/JPS5626165B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B9/00—Generation of oscillations using transit-time effects
    • H03B9/12—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices
    • H03B9/14—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices and elements comprising distributed inductance and capacitance
    • H03B9/145—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices and elements comprising distributed inductance and capacitance the frequency being determined by a cavity resonator, e.g. a hollow waveguide cavity or a coaxial cavity

Landscapes

  • Control Of Motors That Do Not Use Commutators (AREA)
JP8551875A 1975-07-11 1975-07-11 Solid-state oscillator Granted JPS529353A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8551875A JPS529353A (en) 1975-07-11 1975-07-11 Solid-state oscillator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8551875A JPS529353A (en) 1975-07-11 1975-07-11 Solid-state oscillator

Publications (2)

Publication Number Publication Date
JPS529353A true JPS529353A (en) 1977-01-24
JPS5626165B2 JPS5626165B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1981-06-17

Family

ID=13861116

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8551875A Granted JPS529353A (en) 1975-07-11 1975-07-11 Solid-state oscillator

Country Status (1)

Country Link
JP (1) JPS529353A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5421269A (en) * 1977-07-19 1979-02-17 Mitsubishi Electric Corp Manufacture for semiconductor mask
JPS54137407U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1978-03-15 1979-09-22
JPS60147946A (ja) * 1984-01-10 1985-08-05 Sharp Corp 光メモリ素子の製造方法
JPS60173737A (ja) * 1984-02-09 1985-09-07 Nippon Telegr & Teleph Corp <Ntt> 光学デイスク用スタンパ−の製造方法
JPS60195748A (ja) * 1984-03-16 1985-10-04 Matsushita Electric Ind Co Ltd 情報記録担体複製用原盤の製造方法
JPS60195751A (ja) * 1984-03-16 1985-10-04 Sharp Corp 光メモリ素子の製造方法
JPS60197960A (ja) * 1984-03-19 1985-10-07 Sharp Corp 光メモリ素子の製造方法
JPS61113237A (ja) * 1984-11-08 1986-05-31 Rohm Co Ltd ポリシリコンのエツチング方法
JPH0272006U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1988-11-22 1990-06-01

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4983356A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1972-12-15 1974-08-10

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4983356A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1972-12-15 1974-08-10

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5421269A (en) * 1977-07-19 1979-02-17 Mitsubishi Electric Corp Manufacture for semiconductor mask
JPS54137407U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1978-03-15 1979-09-22
JPS60147946A (ja) * 1984-01-10 1985-08-05 Sharp Corp 光メモリ素子の製造方法
JPS60173737A (ja) * 1984-02-09 1985-09-07 Nippon Telegr & Teleph Corp <Ntt> 光学デイスク用スタンパ−の製造方法
JPS60195748A (ja) * 1984-03-16 1985-10-04 Matsushita Electric Ind Co Ltd 情報記録担体複製用原盤の製造方法
JPS60195751A (ja) * 1984-03-16 1985-10-04 Sharp Corp 光メモリ素子の製造方法
JPS60197960A (ja) * 1984-03-19 1985-10-07 Sharp Corp 光メモリ素子の製造方法
JPS61113237A (ja) * 1984-11-08 1986-05-31 Rohm Co Ltd ポリシリコンのエツチング方法
JPH0272006U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1988-11-22 1990-06-01

Also Published As

Publication number Publication date
JPS5626165B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1981-06-17

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