JPS5289447A - Field-effect transistor ultra-high frequency oscillator - Google Patents
Field-effect transistor ultra-high frequency oscillatorInfo
- Publication number
- JPS5289447A JPS5289447A JP616376A JP616376A JPS5289447A JP S5289447 A JPS5289447 A JP S5289447A JP 616376 A JP616376 A JP 616376A JP 616376 A JP616376 A JP 616376A JP S5289447 A JPS5289447 A JP S5289447A
- Authority
- JP
- Japan
- Prior art keywords
- ultra
- high frequency
- frequency oscillator
- field
- effect transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/18—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance
- H03B5/1841—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a strip line resonator
- H03B5/1847—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a strip line resonator the active element in the amplifier being a semiconductor device
- H03B5/1852—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a strip line resonator the active element in the amplifier being a semiconductor device the semiconductor device being a field-effect device
Abstract
PURPOSE:To provide a FET ultra-high frequency osicllator in which the circuit is reasonably operated by simplifying a power supply circuit and supplying self-gate bias between the gate of the FET ultra-high frequency oscillator and the source electrode.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP616376A JPS5289447A (en) | 1976-01-21 | 1976-01-21 | Field-effect transistor ultra-high frequency oscillator |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP616376A JPS5289447A (en) | 1976-01-21 | 1976-01-21 | Field-effect transistor ultra-high frequency oscillator |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5289447A true JPS5289447A (en) | 1977-07-27 |
Family
ID=11630850
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP616376A Pending JPS5289447A (en) | 1976-01-21 | 1976-01-21 | Field-effect transistor ultra-high frequency oscillator |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5289447A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4827530B2 (en) * | 2003-07-15 | 2011-11-30 | イビデン株式会社 | Honeycomb structure |
-
1976
- 1976-01-21 JP JP616376A patent/JPS5289447A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4827530B2 (en) * | 2003-07-15 | 2011-11-30 | イビデン株式会社 | Honeycomb structure |
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