JPS5289079A - Semiconductor hetero junction laser - Google Patents
Semiconductor hetero junction laserInfo
- Publication number
- JPS5289079A JPS5289079A JP560776A JP560776A JPS5289079A JP S5289079 A JPS5289079 A JP S5289079A JP 560776 A JP560776 A JP 560776A JP 560776 A JP560776 A JP 560776A JP S5289079 A JPS5289079 A JP S5289079A
- Authority
- JP
- Japan
- Prior art keywords
- hetero junction
- junction laser
- semiconductor hetero
- laser
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3222—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIVBVI compounds, e.g. PbSSe-laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP560776A JPS5289079A (en) | 1976-01-20 | 1976-01-20 | Semiconductor hetero junction laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP560776A JPS5289079A (en) | 1976-01-20 | 1976-01-20 | Semiconductor hetero junction laser |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5289079A true JPS5289079A (en) | 1977-07-26 |
Family
ID=11615881
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP560776A Pending JPS5289079A (en) | 1976-01-20 | 1976-01-20 | Semiconductor hetero junction laser |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5289079A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5853878A (ja) * | 1981-09-25 | 1983-03-30 | Fujitsu Ltd | 赤外線レ−ザ素子 |
-
1976
- 1976-01-20 JP JP560776A patent/JPS5289079A/ja active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5853878A (ja) * | 1981-09-25 | 1983-03-30 | Fujitsu Ltd | 赤外線レ−ザ素子 |
JPS6237910B2 (ja) * | 1981-09-25 | 1987-08-14 | Fujitsu Ltd |
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