JPS5286079A - Production of semiconductive device - Google Patents

Production of semiconductive device

Info

Publication number
JPS5286079A
JPS5286079A JP205376A JP205376A JPS5286079A JP S5286079 A JPS5286079 A JP S5286079A JP 205376 A JP205376 A JP 205376A JP 205376 A JP205376 A JP 205376A JP S5286079 A JPS5286079 A JP S5286079A
Authority
JP
Japan
Prior art keywords
production
conductive layer
semiconductive device
side area
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP205376A
Other languages
Japanese (ja)
Inventor
Manabu Matsuzawa
Tamio Shinohara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP205376A priority Critical patent/JPS5286079A/en
Publication of JPS5286079A publication Critical patent/JPS5286079A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0661Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To avoid the generation of crack of the conductive layer by forming the conductive layer after the side area is smoothed by etching with the mask formed on the substrate except for the futter and the side area when the conductive layer formed on the semiconductive layer is spreaded to the gutter on the surface of substrate.
JP205376A 1976-01-12 1976-01-12 Production of semiconductive device Pending JPS5286079A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP205376A JPS5286079A (en) 1976-01-12 1976-01-12 Production of semiconductive device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP205376A JPS5286079A (en) 1976-01-12 1976-01-12 Production of semiconductive device

Publications (1)

Publication Number Publication Date
JPS5286079A true JPS5286079A (en) 1977-07-16

Family

ID=11518584

Family Applications (1)

Application Number Title Priority Date Filing Date
JP205376A Pending JPS5286079A (en) 1976-01-12 1976-01-12 Production of semiconductive device

Country Status (1)

Country Link
JP (1) JPS5286079A (en)

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