JPS5286079A - Production of semiconductive device - Google Patents
Production of semiconductive deviceInfo
- Publication number
- JPS5286079A JPS5286079A JP205376A JP205376A JPS5286079A JP S5286079 A JPS5286079 A JP S5286079A JP 205376 A JP205376 A JP 205376A JP 205376 A JP205376 A JP 205376A JP S5286079 A JPS5286079 A JP S5286079A
- Authority
- JP
- Japan
- Prior art keywords
- production
- conductive layer
- semiconductive device
- side area
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To avoid the generation of crack of the conductive layer by forming the conductive layer after the side area is smoothed by etching with the mask formed on the substrate except for the futter and the side area when the conductive layer formed on the semiconductive layer is spreaded to the gutter on the surface of substrate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP205376A JPS5286079A (en) | 1976-01-12 | 1976-01-12 | Production of semiconductive device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP205376A JPS5286079A (en) | 1976-01-12 | 1976-01-12 | Production of semiconductive device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5286079A true JPS5286079A (en) | 1977-07-16 |
Family
ID=11518584
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP205376A Pending JPS5286079A (en) | 1976-01-12 | 1976-01-12 | Production of semiconductive device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5286079A (en) |
-
1976
- 1976-01-12 JP JP205376A patent/JPS5286079A/en active Pending
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