JPS5286059A - Process for production and apparatus used for process of semiconductor device - Google Patents

Process for production and apparatus used for process of semiconductor device

Info

Publication number
JPS5286059A
JPS5286059A JP301476A JP301476A JPS5286059A JP S5286059 A JPS5286059 A JP S5286059A JP 301476 A JP301476 A JP 301476A JP 301476 A JP301476 A JP 301476A JP S5286059 A JPS5286059 A JP S5286059A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
apparatus used
pahes
successivley
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP301476A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5548448B2 (show.php
Inventor
Yoshiharu Horikoshi
Yoshitaka Furukawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP301476A priority Critical patent/JPS5286059A/ja
Publication of JPS5286059A publication Critical patent/JPS5286059A/ja
Publication of JPS5548448B2 publication Critical patent/JPS5548448B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP301476A 1976-01-13 1976-01-13 Process for production and apparatus used for process of semiconductor device Granted JPS5286059A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP301476A JPS5286059A (en) 1976-01-13 1976-01-13 Process for production and apparatus used for process of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP301476A JPS5286059A (en) 1976-01-13 1976-01-13 Process for production and apparatus used for process of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5286059A true JPS5286059A (en) 1977-07-16
JPS5548448B2 JPS5548448B2 (show.php) 1980-12-05

Family

ID=11545475

Family Applications (1)

Application Number Title Priority Date Filing Date
JP301476A Granted JPS5286059A (en) 1976-01-13 1976-01-13 Process for production and apparatus used for process of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5286059A (show.php)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5423391A (en) * 1977-07-22 1979-02-21 Nec Corp Gallium-arsenic semiconductor element
JPS55123126A (en) * 1979-03-15 1980-09-22 Nippon Telegr & Teleph Corp <Ntt> Method for semiconductor crystal growth
JPS5635410A (en) * 1979-08-31 1981-04-08 Fujitsu Ltd Method and device for manufacturing semiconductor device
JPS57191294A (en) * 1981-05-22 1982-11-25 Hitachi Ltd Automatic epitaxial device of liquid phase
JPS59103330A (ja) * 1982-12-06 1984-06-14 Agency Of Ind Science & Technol 化合物半導体の気相成長装置
WO1989000769A1 (en) * 1987-07-09 1989-01-26 Mitsubishi Monsanto Chemical Company Substrate for highly bright led and method of epitaxially growing the same

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5423391A (en) * 1977-07-22 1979-02-21 Nec Corp Gallium-arsenic semiconductor element
JPS55123126A (en) * 1979-03-15 1980-09-22 Nippon Telegr & Teleph Corp <Ntt> Method for semiconductor crystal growth
JPS5635410A (en) * 1979-08-31 1981-04-08 Fujitsu Ltd Method and device for manufacturing semiconductor device
JPS57191294A (en) * 1981-05-22 1982-11-25 Hitachi Ltd Automatic epitaxial device of liquid phase
JPS59103330A (ja) * 1982-12-06 1984-06-14 Agency Of Ind Science & Technol 化合物半導体の気相成長装置
WO1989000769A1 (en) * 1987-07-09 1989-01-26 Mitsubishi Monsanto Chemical Company Substrate for highly bright led and method of epitaxially growing the same
US4921817A (en) * 1987-07-09 1990-05-01 Mitsubishi Monsanto Chemical Co. Substrate for high-intensity led, and method of epitaxially growing same

Also Published As

Publication number Publication date
JPS5548448B2 (show.php) 1980-12-05

Similar Documents

Publication Publication Date Title
JPS5286059A (en) Process for production and apparatus used for process of semiconductor device
JPS5320763A (en) Crystal growing method and apparatus
JPS5211860A (en) Liquid phase epitaxial device
JPS5384457A (en) Liquid-phase epitaxial growth method
JPS52117062A (en) Liquid phase epitaxial growth process
JPS51140561A (en) Liquid phase epitaxial growing method
JPS5249989A (en) Growth method of liquid phase epitaxial
JPS5427767A (en) Single crystal growing method of multielement semiconductors
JPS5223507A (en) Method of forming programs for crystal growth
JPS51139774A (en) Liquid phase growing device
JPS51141577A (en) Method and apparatus for epitaxial growth in the liquid phase
JPS52135264A (en) Liquid phase epitaxial growth method
JPS5381487A (en) Method and apparatus for liquid phase epitaxial growth
JPS52129277A (en) Liquid phase epitaxial growth method
JPS5345171A (en) Molecular beam epitaxial growth method
JPS51126041A (en) Crystal growth method
JPS52114269A (en) Selective liquid growing method
JPS53142170A (en) Defect analysis method for semiconductor
JPS5331354A (en) Water treating device
JPS5249766A (en) Apparatus for producing semiconductor crystal
JPS5378766A (en) Crystal growth device
JPS5241386A (en) Fish-hold cooling apparatus for a small fishing vessel
JPS52121951A (en) Apparatus for cooling greenhouse
JPS5261958A (en) Method and device for liquid phase crystal crowth
JPS5228863A (en) Process for growing in liquid phase