JPS5285079A - Growing of laterally drawn ribbon single crystal - Google Patents

Growing of laterally drawn ribbon single crystal

Info

Publication number
JPS5285079A
JPS5285079A JP95476A JP95476A JPS5285079A JP S5285079 A JPS5285079 A JP S5285079A JP 95476 A JP95476 A JP 95476A JP 95476 A JP95476 A JP 95476A JP S5285079 A JPS5285079 A JP S5285079A
Authority
JP
Japan
Prior art keywords
single crystal
growing
laterally drawn
drawn ribbon
ribbon single
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP95476A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5328385B2 (member.php
Inventor
Taro Shudo
Hiroshi Kudo
Yasushi Tamai
Masamichi Yoshioka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP95476A priority Critical patent/JPS5285079A/ja
Publication of JPS5285079A publication Critical patent/JPS5285079A/ja
Publication of JPS5328385B2 publication Critical patent/JPS5328385B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP95476A 1976-01-07 1976-01-07 Growing of laterally drawn ribbon single crystal Granted JPS5285079A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP95476A JPS5285079A (en) 1976-01-07 1976-01-07 Growing of laterally drawn ribbon single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP95476A JPS5285079A (en) 1976-01-07 1976-01-07 Growing of laterally drawn ribbon single crystal

Publications (2)

Publication Number Publication Date
JPS5285079A true JPS5285079A (en) 1977-07-15
JPS5328385B2 JPS5328385B2 (member.php) 1978-08-14

Family

ID=11488055

Family Applications (1)

Application Number Title Priority Date Filing Date
JP95476A Granted JPS5285079A (en) 1976-01-07 1976-01-07 Growing of laterally drawn ribbon single crystal

Country Status (1)

Country Link
JP (1) JPS5285079A (member.php)

Also Published As

Publication number Publication date
JPS5328385B2 (member.php) 1978-08-14

Similar Documents

Publication Publication Date Title
JPS5347765A (en) Semiconductor crystal growth method
IT1170715B (it) Procedimento per produrre monocristalli purissimi mediante tiraggio da crogiolo secondo czochralski
GB1476915A (en) Drawing crystals from a melt
JPS5285079A (en) Growing of laterally drawn ribbon single crystal
JPS549174A (en) Method of producing seingle crystal
JPS534778A (en) Crystal growth method with molecular beam
JPS538374A (en) Growing method for single crystal of semiconductor
JPS5361577A (en) Growing method for horizontally pulled ribbon crystal
JPS56109896A (en) Semiconductor single crystal and its growing method
JPS52155189A (en) Multiple layer crystal growth
JPS5435899A (en) Production of rare earth element gallium garnet single crystal
JPS526093A (en) Production method of semiconductor device
JPS52138095A (en) Growth of sapphire single crystal
JPS52127500A (en) Production of linb1-taxo3 single crystal film
JPS53100177A (en) Growing method for band crystal
JPS5338686A (en) Production of microbial cells
JPS52134898A (en) Gap single crystal with low dislocation density
JPS53139970A (en) Liquid phase epitaxial growth method of gaas crystal
JPS51120984A (en) Single crystal growing method
JPS52149273A (en) Production of plate-shaped crystal
JPS5316400A (en) Production of piezoelectric oxide single crystal
JPS52146556A (en) Silicon crystal growth method
JPS5339299A (en) Growing method for single crystal
JPS542660A (en) Liquid-phase epitaxial growth method of compound semiconductor
JPS5364700A (en) Working method for single crystal