JPS5276878A - Polyamide siloxane copolymerization protection cover film for semiconductor device - Google Patents

Polyamide siloxane copolymerization protection cover film for semiconductor device

Info

Publication number
JPS5276878A
JPS5276878A JP51152764A JP15276476A JPS5276878A JP S5276878 A JPS5276878 A JP S5276878A JP 51152764 A JP51152764 A JP 51152764A JP 15276476 A JP15276476 A JP 15276476A JP S5276878 A JPS5276878 A JP S5276878A
Authority
JP
Japan
Prior art keywords
semiconductor device
cover film
protection cover
siloxane copolymerization
polyamide siloxane
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP51152764A
Other languages
English (en)
Japanese (ja)
Inventor
Furanshisu Uindosoo Harorudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of JPS5276878A publication Critical patent/JPS5276878A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • H10W74/131—
    • H10W74/137—
    • H10W74/476—
    • H10W72/01515—
    • H10W72/075—
    • H10W74/00—

Landscapes

  • Formation Of Insulating Films (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
JP51152764A 1975-12-18 1976-12-17 Polyamide siloxane copolymerization protection cover film for semiconductor device Pending JPS5276878A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US64217175A 1975-12-18 1975-12-18

Publications (1)

Publication Number Publication Date
JPS5276878A true JPS5276878A (en) 1977-06-28

Family

ID=24575493

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51152764A Pending JPS5276878A (en) 1975-12-18 1976-12-17 Polyamide siloxane copolymerization protection cover film for semiconductor device

Country Status (6)

Country Link
JP (1) JPS5276878A (enExample)
DE (1) DE2656963A1 (enExample)
FR (1) FR2335960A1 (enExample)
GB (1) GB1563421A (enExample)
NL (1) NL7613944A (enExample)
SE (1) SE419809B (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5474677A (en) * 1977-11-28 1979-06-14 Hitachi Ltd Surface stabilizing method of semiconcuctor element using polyimide silicone
JPS56130947A (en) * 1980-03-17 1981-10-14 Fujitsu Ltd Manufacture of semiconductor device
JPS56172348U (enExample) * 1980-05-20 1981-12-19

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2126786B (en) * 1982-09-04 1986-04-03 Emi Ltd Ion sensitive field effect transistor encapsulation
KR950011927B1 (ko) * 1989-12-07 1995-10-12 가부시끼가이샤 도시바 감광성 조성물 및 수지봉지형 반도체장치
DE102019105727B4 (de) * 2019-03-07 2020-10-15 Semikron Elektronik Gmbh & Co. Kg Thyristor oder Diode

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5284974A (en) * 1975-12-11 1977-07-14 Gen Electric Semiconductor element

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1182353C2 (de) * 1961-03-29 1973-01-11 Siemens Ag Verfahren zum Herstellen eines Halbleiter-bauelements, wie Halbleiterstromtor oder Flaechentransistor, mit einer hochohmigen n-Zone zwischen zwei p-Zonen im Halbleiter-koerper
US3325450A (en) * 1965-05-12 1967-06-13 Gen Electric Polysiloxaneimides and their production
GB1230421A (enExample) * 1967-09-15 1971-05-05
US3610870A (en) * 1968-03-13 1971-10-05 Hitachi Ltd Method for sealing a semiconductor element
US3615913A (en) * 1968-11-08 1971-10-26 Westinghouse Electric Corp Polyimide and polyamide-polyimide as a semiconductor surface passivator and protectant coating
US3628106A (en) * 1969-05-05 1971-12-14 Gen Electric Passivated semiconductor device with protective peripheral junction portion
US3597269A (en) * 1969-09-30 1971-08-03 Westinghouse Electric Corp Surfce stabilization of semiconductor power devices and article
US3598784A (en) * 1970-03-11 1971-08-10 Gen Electric Polysiloxane amides
IE35063B1 (en) * 1970-05-22 1975-10-29 Gen Electric Semiconductor device with polymeric passivant bonded preform
US3740305A (en) * 1971-10-01 1973-06-19 Gen Electric Composite materials bonded with siloxane containing polyimides
GB1553243A (en) * 1975-08-04 1979-09-26 Gen Electric Semiconductor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5284974A (en) * 1975-12-11 1977-07-14 Gen Electric Semiconductor element

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5474677A (en) * 1977-11-28 1979-06-14 Hitachi Ltd Surface stabilizing method of semiconcuctor element using polyimide silicone
JPS56130947A (en) * 1980-03-17 1981-10-14 Fujitsu Ltd Manufacture of semiconductor device
JPS56172348U (enExample) * 1980-05-20 1981-12-19

Also Published As

Publication number Publication date
FR2335960A1 (fr) 1977-07-15
SE419809B (sv) 1981-08-24
NL7613944A (nl) 1977-06-21
GB1563421A (en) 1980-03-26
SE7614186L (sv) 1977-06-19
DE2656963A1 (de) 1977-06-30
FR2335960B1 (enExample) 1982-07-30

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