FR2335960A1 - Element semi-conducteur perfectionne - Google Patents

Element semi-conducteur perfectionne

Info

Publication number
FR2335960A1
FR2335960A1 FR7637721A FR7637721A FR2335960A1 FR 2335960 A1 FR2335960 A1 FR 2335960A1 FR 7637721 A FR7637721 A FR 7637721A FR 7637721 A FR7637721 A FR 7637721A FR 2335960 A1 FR2335960 A1 FR 2335960A1
Authority
FR
France
Prior art keywords
perfected
semiconductor element
semiconductor
perfected semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7637721A
Other languages
English (en)
French (fr)
Other versions
FR2335960B1 (enExample
Inventor
Harold Francis Windsor
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of FR2335960A1 publication Critical patent/FR2335960A1/fr
Application granted granted Critical
Publication of FR2335960B1 publication Critical patent/FR2335960B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • H10W74/131—
    • H10W74/137—
    • H10W74/476—
    • H10W72/01515—
    • H10W72/075—
    • H10W74/00—
FR7637721A 1975-12-18 1976-12-15 Element semi-conducteur perfectionne Granted FR2335960A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US64217175A 1975-12-18 1975-12-18

Publications (2)

Publication Number Publication Date
FR2335960A1 true FR2335960A1 (fr) 1977-07-15
FR2335960B1 FR2335960B1 (enExample) 1982-07-30

Family

ID=24575493

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7637721A Granted FR2335960A1 (fr) 1975-12-18 1976-12-15 Element semi-conducteur perfectionne

Country Status (6)

Country Link
JP (1) JPS5276878A (enExample)
DE (1) DE2656963A1 (enExample)
FR (1) FR2335960A1 (enExample)
GB (1) GB1563421A (enExample)
NL (1) NL7613944A (enExample)
SE (1) SE419809B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0431971A3 (en) * 1989-12-07 1991-09-18 Kabushiki Kaisha Toshiba Photosensitive composition and resin-encapsulated semiconductor device

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5474677A (en) * 1977-11-28 1979-06-14 Hitachi Ltd Surface stabilizing method of semiconcuctor element using polyimide silicone
JPS56130947A (en) * 1980-03-17 1981-10-14 Fujitsu Ltd Manufacture of semiconductor device
JPS60137Y2 (ja) * 1980-05-20 1985-01-05 九州日立マクセル株式会社 電動式噴霧器
GB2126786B (en) * 1982-09-04 1986-04-03 Emi Ltd Ion sensitive field effect transistor encapsulation
DE102019105727B4 (de) * 2019-03-07 2020-10-15 Semikron Elektronik Gmbh & Co. Kg Thyristor oder Diode

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3316465A (en) * 1961-03-29 1967-04-25 Siemens Ag Multi-layer junction semiconductor devices such as controlled rectifiers and transistors, containing electro-positive protective coating
FR1580665A (enExample) * 1967-09-15 1969-09-05
FR2022876A1 (enExample) * 1968-11-08 1970-08-07 Westinghouse Electric Corp
US3597269A (en) * 1969-09-30 1971-08-03 Westinghouse Electric Corp Surfce stabilization of semiconductor power devices and article
FR2090206A1 (enExample) * 1970-05-22 1972-01-14 Gen Electric

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3325450A (en) * 1965-05-12 1967-06-13 Gen Electric Polysiloxaneimides and their production
US3610870A (en) * 1968-03-13 1971-10-05 Hitachi Ltd Method for sealing a semiconductor element
US3628106A (en) * 1969-05-05 1971-12-14 Gen Electric Passivated semiconductor device with protective peripheral junction portion
US3598784A (en) * 1970-03-11 1971-08-10 Gen Electric Polysiloxane amides
US3740305A (en) * 1971-10-01 1973-06-19 Gen Electric Composite materials bonded with siloxane containing polyimides
GB1553243A (en) * 1975-08-04 1979-09-26 Gen Electric Semiconductor
SE418433B (sv) * 1975-12-11 1981-05-25 Gen Electric Halvledarelement med ett skikt av ett polymert siloxan-innehallande membranmaterial med variabel permeabilitet anbringat pa utvalda ytomraden av elementet

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3316465A (en) * 1961-03-29 1967-04-25 Siemens Ag Multi-layer junction semiconductor devices such as controlled rectifiers and transistors, containing electro-positive protective coating
FR1580665A (enExample) * 1967-09-15 1969-09-05
FR2022876A1 (enExample) * 1968-11-08 1970-08-07 Westinghouse Electric Corp
US3597269A (en) * 1969-09-30 1971-08-03 Westinghouse Electric Corp Surfce stabilization of semiconductor power devices and article
FR2090206A1 (enExample) * 1970-05-22 1972-01-14 Gen Electric

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0431971A3 (en) * 1989-12-07 1991-09-18 Kabushiki Kaisha Toshiba Photosensitive composition and resin-encapsulated semiconductor device
US5340684A (en) * 1989-12-07 1994-08-23 Kabushiki Kaisha Toshiba Photosensitive composition and resin-encapsulated semiconductor device

Also Published As

Publication number Publication date
SE419809B (sv) 1981-08-24
NL7613944A (nl) 1977-06-21
GB1563421A (en) 1980-03-26
SE7614186L (sv) 1977-06-19
DE2656963A1 (de) 1977-06-30
JPS5276878A (en) 1977-06-28
FR2335960B1 (enExample) 1982-07-30

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Legal Events

Date Code Title Description
ST Notification of lapse