JPS5254384A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS5254384A
JPS5254384A JP50129856A JP12985675A JPS5254384A JP S5254384 A JPS5254384 A JP S5254384A JP 50129856 A JP50129856 A JP 50129856A JP 12985675 A JP12985675 A JP 12985675A JP S5254384 A JPS5254384 A JP S5254384A
Authority
JP
Japan
Prior art keywords
memory device
semiconductor memory
exclusive
read
icreasing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50129856A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5549779B2 (enExample
Inventor
Shigeharu Horiuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP50129856A priority Critical patent/JPS5254384A/ja
Publication of JPS5254384A publication Critical patent/JPS5254384A/ja
Publication of JPS5549779B2 publication Critical patent/JPS5549779B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H10D84/406—Combinations of FETs or IGBTs with vertical BJTs and with one or more of diodes, resistors or capacitors

Landscapes

  • Semiconductor Memories (AREA)
JP50129856A 1975-10-30 1975-10-30 Semiconductor memory device Granted JPS5254384A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50129856A JPS5254384A (en) 1975-10-30 1975-10-30 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50129856A JPS5254384A (en) 1975-10-30 1975-10-30 Semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS5254384A true JPS5254384A (en) 1977-05-02
JPS5549779B2 JPS5549779B2 (enExample) 1980-12-13

Family

ID=15019944

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50129856A Granted JPS5254384A (en) 1975-10-30 1975-10-30 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS5254384A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61111414U (enExample) * 1984-12-27 1986-07-15

Also Published As

Publication number Publication date
JPS5549779B2 (enExample) 1980-12-13

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