JPS5248475A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5248475A JPS5248475A JP12378475A JP12378475A JPS5248475A JP S5248475 A JPS5248475 A JP S5248475A JP 12378475 A JP12378475 A JP 12378475A JP 12378475 A JP12378475 A JP 12378475A JP S5248475 A JPS5248475 A JP S5248475A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- region
- leaving
- decrease
- concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12378475A JPS5248475A (en) | 1975-10-16 | 1975-10-16 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12378475A JPS5248475A (en) | 1975-10-16 | 1975-10-16 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5248475A true JPS5248475A (en) | 1977-04-18 |
JPS5249312B2 JPS5249312B2 (ja) | 1977-12-16 |
Family
ID=14869199
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12378475A Granted JPS5248475A (en) | 1975-10-16 | 1975-10-16 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5248475A (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5799777A (en) * | 1980-12-12 | 1982-06-21 | Toshiba Corp | Metal oxide semiconductor type semiconductor device |
JPS5828870A (ja) * | 1981-08-12 | 1983-02-19 | Toshiba Corp | 薄膜半導体装置 |
US4705358A (en) * | 1985-06-10 | 1987-11-10 | Seiko Instruments & Electronics Ltd. | Substrate for active matrix display |
JPH0296376A (ja) * | 1988-06-03 | 1990-04-09 | Nippon Denso Co Ltd | 半導体装置 |
US5111260A (en) * | 1983-06-17 | 1992-05-05 | Texax Instruments Incorporated | Polysilicon FETs |
US5293052A (en) * | 1992-03-23 | 1994-03-08 | Harris Corporation | SOT CMOS device having differentially doped body extension for providing improved backside leakage channel stop |
-
1975
- 1975-10-16 JP JP12378475A patent/JPS5248475A/ja active Granted
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5799777A (en) * | 1980-12-12 | 1982-06-21 | Toshiba Corp | Metal oxide semiconductor type semiconductor device |
JPS5828870A (ja) * | 1981-08-12 | 1983-02-19 | Toshiba Corp | 薄膜半導体装置 |
US5111260A (en) * | 1983-06-17 | 1992-05-05 | Texax Instruments Incorporated | Polysilicon FETs |
US4705358A (en) * | 1985-06-10 | 1987-11-10 | Seiko Instruments & Electronics Ltd. | Substrate for active matrix display |
JPH0296376A (ja) * | 1988-06-03 | 1990-04-09 | Nippon Denso Co Ltd | 半導体装置 |
US5293052A (en) * | 1992-03-23 | 1994-03-08 | Harris Corporation | SOT CMOS device having differentially doped body extension for providing improved backside leakage channel stop |
Also Published As
Publication number | Publication date |
---|---|
JPS5249312B2 (ja) | 1977-12-16 |
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