JPS523775B2 - - Google Patents

Info

Publication number
JPS523775B2
JPS523775B2 JP6839872A JP6839872A JPS523775B2 JP S523775 B2 JPS523775 B2 JP S523775B2 JP 6839872 A JP6839872 A JP 6839872A JP 6839872 A JP6839872 A JP 6839872A JP S523775 B2 JPS523775 B2 JP S523775B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP6839872A
Other languages
Japanese (ja)
Other versions
JPS4928270A (de
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP6839872A priority Critical patent/JPS523775B2/ja
Priority to GB3238173A priority patent/GB1398940A/en
Priority to DE19732334658 priority patent/DE2334658C3/de
Priority to FR7325121A priority patent/FR2192378B1/fr
Publication of JPS4928270A publication Critical patent/JPS4928270A/ja
Publication of JPS523775B2 publication Critical patent/JPS523775B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043Making grooves, e.g. cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065Plasma etching; Reactive-ion etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Perforating, Stamping-Out Or Severing By Means Other Than Cutting (AREA)
  • Dicing (AREA)
JP6839872A 1972-07-08 1972-07-08 Expired JPS523775B2 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP6839872A JPS523775B2 (de) 1972-07-08 1972-07-08
GB3238173A GB1398940A (en) 1972-07-08 1973-07-06 Method of dividing semiconductor wafers
DE19732334658 DE2334658C3 (de) 1972-07-08 1973-07-07 Verfahren zum Zerteilen von Halbleiterscheiben
FR7325121A FR2192378B1 (de) 1972-07-08 1973-07-09

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6839872A JPS523775B2 (de) 1972-07-08 1972-07-08

Publications (2)

Publication Number Publication Date
JPS4928270A JPS4928270A (de) 1974-03-13
JPS523775B2 true JPS523775B2 (de) 1977-01-29

Family

ID=13372538

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6839872A Expired JPS523775B2 (de) 1972-07-08 1972-07-08

Country Status (4)

Country Link
JP (1) JPS523775B2 (de)
DE (1) DE2334658C3 (de)
FR (1) FR2192378B1 (de)
GB (1) GB1398940A (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0644592B2 (ja) * 1984-10-25 1994-06-08 日本電気株式会社 半導体装置の製造方法
US6642127B2 (en) * 2001-10-19 2003-11-04 Applied Materials, Inc. Method for dicing a semiconductor wafer
CN103341692A (zh) 2013-06-26 2013-10-09 京东方科技集团股份有限公司 切割不规则图形基板的方法和显示装置
JP7102065B2 (ja) * 2018-06-20 2022-07-19 株式会社ディスコ チップの製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3615956A (en) * 1969-03-27 1971-10-26 Signetics Corp Gas plasma vapor etching process

Also Published As

Publication number Publication date
GB1398940A (en) 1975-06-25
FR2192378A1 (de) 1974-02-08
DE2334658C3 (de) 1978-11-23
FR2192378B1 (de) 1977-09-02
JPS4928270A (de) 1974-03-13
DE2334658B2 (de) 1978-03-30
DE2334658A1 (de) 1974-01-24

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