FR2192378B1 - - Google Patents

Info

Publication number
FR2192378B1
FR2192378B1 FR7325121A FR7325121A FR2192378B1 FR 2192378 B1 FR2192378 B1 FR 2192378B1 FR 7325121 A FR7325121 A FR 7325121A FR 7325121 A FR7325121 A FR 7325121A FR 2192378 B1 FR2192378 B1 FR 2192378B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7325121A
Other languages
French (fr)
Other versions
FR2192378A1 (de
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of FR2192378A1 publication Critical patent/FR2192378A1/fr
Application granted granted Critical
Publication of FR2192378B1 publication Critical patent/FR2192378B1/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043Making grooves, e.g. cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065Plasma etching; Reactive-ion etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Perforating, Stamping-Out Or Severing By Means Other Than Cutting (AREA)
  • Dicing (AREA)
FR7325121A 1972-07-08 1973-07-09 Expired FR2192378B1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6839872A JPS523775B2 (de) 1972-07-08 1972-07-08

Publications (2)

Publication Number Publication Date
FR2192378A1 FR2192378A1 (de) 1974-02-08
FR2192378B1 true FR2192378B1 (de) 1977-09-02

Family

ID=13372538

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7325121A Expired FR2192378B1 (de) 1972-07-08 1973-07-09

Country Status (4)

Country Link
JP (1) JPS523775B2 (de)
DE (1) DE2334658C3 (de)
FR (1) FR2192378B1 (de)
GB (1) GB1398940A (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0644592B2 (ja) * 1984-10-25 1994-06-08 日本電気株式会社 半導体装置の製造方法
US6642127B2 (en) * 2001-10-19 2003-11-04 Applied Materials, Inc. Method for dicing a semiconductor wafer
CN103341692A (zh) 2013-06-26 2013-10-09 京东方科技集团股份有限公司 切割不规则图形基板的方法和显示装置
JP7102065B2 (ja) * 2018-06-20 2022-07-19 株式会社ディスコ チップの製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3615956A (en) * 1969-03-27 1971-10-26 Signetics Corp Gas plasma vapor etching process

Also Published As

Publication number Publication date
GB1398940A (en) 1975-06-25
FR2192378A1 (de) 1974-02-08
DE2334658C3 (de) 1978-11-23
JPS4928270A (de) 1974-03-13
DE2334658B2 (de) 1978-03-30
DE2334658A1 (de) 1974-01-24
JPS523775B2 (de) 1977-01-29

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