JPS5215075B2 - - Google Patents

Info

Publication number
JPS5215075B2
JPS5215075B2 JP47111956A JP11195672A JPS5215075B2 JP S5215075 B2 JPS5215075 B2 JP S5215075B2 JP 47111956 A JP47111956 A JP 47111956A JP 11195672 A JP11195672 A JP 11195672A JP S5215075 B2 JPS5215075 B2 JP S5215075B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP47111956A
Other languages
Japanese (ja)
Other versions
JPS4875482A (en:Method
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4875482A publication Critical patent/JPS4875482A/ja
Publication of JPS5215075B2 publication Critical patent/JPS5215075B2/ja
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/66—Crystals of complex geometrical shape, e.g. tubes, cylinders
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/13—Hollow or container type article [e.g., tube, vase, etc.]
    • Y10T428/131—Glass, ceramic, or sintered, fused, fired, or calcined metal oxide or metal carbide containing [e.g., porcelain, brick, cement, etc.]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP47111956A 1971-11-08 1972-11-08 Expired JPS5215075B2 (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00196449A US3846082A (en) 1971-11-08 1971-11-08 Production of crystalline bodies of complex geometries

Publications (2)

Publication Number Publication Date
JPS4875482A JPS4875482A (en:Method) 1973-10-11
JPS5215075B2 true JPS5215075B2 (en:Method) 1977-04-26

Family

ID=22725468

Family Applications (1)

Application Number Title Priority Date Filing Date
JP47111956A Expired JPS5215075B2 (en:Method) 1971-11-08 1972-11-08

Country Status (11)

Country Link
US (1) US3846082A (en:Method)
JP (1) JPS5215075B2 (en:Method)
BE (1) BE791024A (en:Method)
BR (1) BR7207786D0 (en:Method)
CA (1) CA974859A (en:Method)
CH (1) CH576283A5 (en:Method)
DE (1) DE2254616C3 (en:Method)
FR (1) FR2159339B1 (en:Method)
GB (1) GB1382529A (en:Method)
IT (1) IT973428B (en:Method)
NL (1) NL7215097A (en:Method)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5567596A (en) * 1978-11-10 1980-05-21 Hitachi Ltd Single crystal growing method
US4612972A (en) * 1982-01-04 1986-09-23 Olin Corporation Method and apparatus for electro-magnetic casting of complex shapes
US4647437A (en) * 1983-05-19 1987-03-03 Mobil Solar Energy Corporation Apparatus for and method of making crystalline bodies
DE3890206C2 (de) * 1987-03-27 2001-05-17 Ase Americas Inc N D Ges D Sta Verfahren und Vorrichtung zum Ziehen eines hohlen Kristallkörpers
US4937053A (en) * 1987-03-27 1990-06-26 Mobil Solar Energy Corporation Crystal growing apparatus
US5346883A (en) * 1987-08-21 1994-09-13 The Furukawa Electric Co., Ltd. Method of manufacturing superconductive products
EP0608213A1 (en) * 1990-07-10 1994-08-03 Saphikon, Inc. Apparatus for growing hollow crystalline bodies from the melt
US5114528A (en) * 1990-08-07 1992-05-19 Wisconsin Alumni Research Foundation Edge-defined contact heater apparatus and method for floating zone crystal growth
AU9034491A (en) * 1990-08-15 1992-03-17 Mobil Solar Energy Corporation Method of growing cylindrical tubular crystalline bodies
US5266151A (en) * 1992-03-04 1993-11-30 Advanced Crystal Products Corporation Inside edge defined, self-filling (IESF) die for crystal growth
US5370078A (en) * 1992-12-01 1994-12-06 Wisconsin Alumni Research Foundation Method and apparatus for crystal growth with shape and segregation control
FR2712608B1 (fr) * 1993-11-16 1996-01-12 Commissariat Energie Atomique Procédé de fabrication de pièces en matériau polycristallin ou monocristallin par croissance à partir d'un bain fondu.
US5487353A (en) * 1994-02-14 1996-01-30 General Electric Company Conversion of doped polycrystalline material to single crystal
US6722873B2 (en) * 2001-09-10 2004-04-20 Recot, Inc. Apparatus for producing a curly puff extrudate
US20050034581A1 (en) * 2003-08-12 2005-02-17 Eugenio Bortone Method and apparatus for cutting a curly puff extrudate
US20050066881A1 (en) * 2003-09-25 2005-03-31 Canon Kabushiki Kaisha Continuous production method for crystalline silicon and production apparatus for the same
US7348076B2 (en) 2004-04-08 2008-03-25 Saint-Gobain Ceramics & Plastics, Inc. Single crystals and methods for fabricating same
AU2006257867B2 (en) * 2005-06-10 2010-04-22 Saint-Gobain Ceramics & Plastics, Inc. Transparent ceramic composite
JP5702931B2 (ja) * 2006-09-22 2015-04-15 サン−ゴバン セラミックス アンド プラスティクス，インコーポレイティド 単結晶ｃ−面サファイア材料の形成方法
US20090130415A1 (en) * 2007-11-21 2009-05-21 Saint-Gobain Ceramics & Plastics, Inc. R-Plane Sapphire Method and Apparatus
USD641538S1 (en) * 2010-04-02 2011-07-19 Last Twist, Inc. Pretzel stick
USD641536S1 (en) * 2010-04-02 2011-07-19 Last Twist, Inc. Frozen confection
USD641537S1 (en) * 2010-04-02 2011-07-19 Last Twist, Inc. Sausage
RU2451117C2 (ru) * 2010-06-09 2012-05-20 Федеральное государственное унитарное предприятие Экспериментальный завод научного приборостроения со Специальным конструкторским бюро Российской академии наук Устройство для выращивания профилированных кристаллов в виде полых тел вращения
US11047650B2 (en) 2017-09-29 2021-06-29 Saint-Gobain Ceramics & Plastics, Inc. Transparent composite having a laminated structure

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1066564B (de) * 1959-10-08 Siemens iS. Halske Aktiengesellschaft, Berlin1 und1 München Verfahren zur Herstellung von reinstem Silicium für Halbleiteranordnungen
NL121446C (en:Method) * 1958-11-17
US3031275A (en) * 1959-02-20 1962-04-24 Shockley William Process for growing single crystals
NL238924A (en:Method) * 1959-05-05
US3124489A (en) * 1960-05-02 1964-03-10 Method of continuously growing thin strip crystals
BE638262A (en:Method) * 1962-10-18
US3370927A (en) * 1966-02-28 1968-02-27 Westinghouse Electric Corp Method of angularly pulling continuous dendritic crystals
DE1519897B2 (de) * 1966-08-06 1974-07-18 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren und Vorrichtung zum tiegelfreien Zonenschmelzen eines kristallinen Stabes, insbesondere Halbleiterstabes
US3471266A (en) * 1967-05-29 1969-10-07 Tyco Laboratories Inc Growth of inorganic filaments
US3591348A (en) * 1968-01-24 1971-07-06 Tyco Laboratories Inc Method of growing crystalline materials
DE1935372C3 (de) * 1969-07-11 1980-06-19 Tyco Laboratories Inc., Waltham, Mass. (V.St.A.) Verfahren und Vorrichtung zum Ziehen eines kristallinen Körpers vorbestimmten Querschnitts aus einer Schmelze

Also Published As

Publication number Publication date
GB1382529A (en) 1975-02-05
IT973428B (it) 1974-06-10
US3846082A (en) 1974-11-05
FR2159339B1 (en:Method) 1977-07-29
NL7215097A (en:Method) 1973-05-10
DE2254616B2 (de) 1974-11-28
CA974859A (en) 1975-09-23
BE791024A (fr) 1973-05-07
JPS4875482A (en:Method) 1973-10-11
BR7207786D0 (pt) 1973-09-27
DE2254616C3 (de) 1975-07-10
CH576283A5 (en:Method) 1976-06-15
FR2159339A1 (en:Method) 1973-06-22
DE2254616A1 (de) 1973-05-10

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