JPS52141579A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS52141579A
JPS52141579A JP5861376A JP5861376A JPS52141579A JP S52141579 A JPS52141579 A JP S52141579A JP 5861376 A JP5861376 A JP 5861376A JP 5861376 A JP5861376 A JP 5861376A JP S52141579 A JPS52141579 A JP S52141579A
Authority
JP
Japan
Prior art keywords
semiconductor device
mos
prevent
gate electrode
protective film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5861376A
Other languages
Japanese (ja)
Inventor
Takeshi Ishihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP5861376A priority Critical patent/JPS52141579A/en
Publication of JPS52141579A publication Critical patent/JPS52141579A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices

Abstract

PURPOSE:To prevent the electrostatic destruction of the MOS-type unit by providing semi-insulated protective film close to the gate electrode.
JP5861376A 1976-05-20 1976-05-20 Semiconductor device Pending JPS52141579A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5861376A JPS52141579A (en) 1976-05-20 1976-05-20 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5861376A JPS52141579A (en) 1976-05-20 1976-05-20 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS52141579A true JPS52141579A (en) 1977-11-25

Family

ID=13089382

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5861376A Pending JPS52141579A (en) 1976-05-20 1976-05-20 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS52141579A (en)

Similar Documents

Publication Publication Date Title
AU2312877A (en) Reducing the switching time of semiconductor devices by nuclear irradiation
JPS5214384A (en) Input resistor for protection of semiconductor device
JPS52141579A (en) Semiconductor device
JPS52127149A (en) Semiconductor circuit
JPS51150284A (en) Semiconductor unvolatile memory unit
JPS5275987A (en) Gate protecting device
NL185808C (en) COMPOSITE HIGH VOLTAGE SEMICONDUCTOR DEVICE.
JPS51146188A (en) Diode device
JPS5244574A (en) Semiconductor device
JPS52103974A (en) Semicondcutor integrated circuit device
JPS538575A (en) Semiconductor device
NL177934C (en) SELF-OPERATING OVERFLOW PROTECTION DEVICE.
JPS5369589A (en) Insulating gate type field effect transistor with protective device
JPS51130171A (en) Semiconductor device
JPS51138394A (en) Semiconductor device
JPS51122382A (en) Semiconductor device
JPS5371573A (en) Field effect transistor of isolating gate type
JPS5229180A (en) Vertical field effect semiconductive device
JPS5369587A (en) Manufacture for semiconductor device
JPS5425164A (en) Semiconductor device
SU625286A1 (en) Switching transistor protection device
JPS5268393A (en) Semiconductor device
JPS51128264A (en) A semiconductor device
JPS5365081A (en) Field effect semiconductor device
JPS5229177A (en) Vertical field effect semiconductive device