JPS52132677A - Reactor for radiating flow - Google Patents

Reactor for radiating flow

Info

Publication number
JPS52132677A
JPS52132677A JP543977A JP543977A JPS52132677A JP S52132677 A JPS52132677 A JP S52132677A JP 543977 A JP543977 A JP 543977A JP 543977 A JP543977 A JP 543977A JP S52132677 A JPS52132677 A JP S52132677A
Authority
JP
Japan
Prior art keywords
reactor
radiating flow
radiating
flow
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP543977A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5732904B2 (OSRAM
Inventor
Baanaado Arekusandaa J Furanku
Deyujiyuyoo Kapio Sezaa
Emerarudo Hauzaa Jiyu Buikutaa
Jiyosefu Rebuinsutein Haiman
Jiyosefu Mogabu Shiriru
Kumaa Shinha Ashiyoku
Suegufuraido Wagu Richiyaado
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of JPS52132677A publication Critical patent/JPS52132677A/ja
Publication of JPS5732904B2 publication Critical patent/JPS5732904B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
JP543977A 1976-01-22 1977-01-22 Reactor for radiating flow Granted JPS52132677A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/651,555 US4033287A (en) 1976-01-22 1976-01-22 Radial flow reactor including glow discharge limiting shield

Publications (2)

Publication Number Publication Date
JPS52132677A true JPS52132677A (en) 1977-11-07
JPS5732904B2 JPS5732904B2 (OSRAM) 1982-07-14

Family

ID=24613299

Family Applications (1)

Application Number Title Priority Date Filing Date
JP543977A Granted JPS52132677A (en) 1976-01-22 1977-01-22 Reactor for radiating flow

Country Status (6)

Country Link
US (1) US4033287A (OSRAM)
JP (1) JPS52132677A (OSRAM)
BE (1) BE850518A (OSRAM)
DE (1) DE2702120A1 (OSRAM)
FR (1) FR2339001A1 (OSRAM)
GB (1) GB1563529A (OSRAM)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5538043A (en) * 1978-09-12 1980-03-17 Fujitsu Ltd Dry etching device
JPS5811240U (ja) * 1981-07-14 1983-01-25 株式会社島津製作所 プラズマｃｖｄ装置
JPS59207620A (ja) * 1983-05-10 1984-11-24 Zenko Hirose アモルフアスシリコン成膜装置
JPS60117716A (ja) * 1983-11-30 1985-06-25 Zenko Hirose 成膜方法
JPS6164121A (ja) * 1984-09-05 1986-04-02 Toshiba Corp Ｃｖｄ装置

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4226897A (en) * 1977-12-05 1980-10-07 Plasma Physics Corporation Method of forming semiconducting materials and barriers
US4328258A (en) * 1977-12-05 1982-05-04 Plasma Physics Corp. Method of forming semiconducting materials and barriers
US4282267A (en) * 1979-09-20 1981-08-04 Western Electric Co., Inc. Methods and apparatus for generating plasmas
US4307283A (en) * 1979-09-27 1981-12-22 Eaton Corporation Plasma etching apparatus II-conical-shaped projection
US4270999A (en) * 1979-09-28 1981-06-02 International Business Machines Corporation Method and apparatus for gas feed control in a dry etching process
US4574733A (en) * 1982-09-16 1986-03-11 Energy Conversion Devices, Inc. Substrate shield for preventing the deposition of nonhomogeneous films
US4462333A (en) * 1982-10-27 1984-07-31 Energy Conversion Devices, Inc. Process gas introduction, confinement and evacuation system for glow discharge deposition apparatus
US4525375A (en) * 1983-03-28 1985-06-25 Rca Corporation Method of controllong the deposition of hydrogenated amorphous silicon and apparatus therefor
US4593644A (en) * 1983-10-26 1986-06-10 Rca Corporation Continuous in-line deposition system
EP0301604B1 (de) * 1984-01-28 1993-05-26 Philips Patentverwaltung GmbH Vorrichtung zur Beschichtung eines Substrates mittels Plasma-Chemical Vapour Deposition oder Kathodenzerstäubung und damit ausgeführtes Verfahren
JPS61232612A (ja) * 1985-04-08 1986-10-16 Semiconductor Energy Lab Co Ltd 気相反応装置
US4694779A (en) * 1984-10-19 1987-09-22 Tetron, Inc. Reactor apparatus for semiconductor wafer processing
US6786997B1 (en) 1984-11-26 2004-09-07 Semiconductor Energy Laboratory Co., Ltd. Plasma processing apparatus
JPH0752718B2 (ja) 1984-11-26 1995-06-05 株式会社半導体エネルギー研究所 薄膜形成方法
GB8508699D0 (en) * 1985-04-03 1985-05-09 Barr & Stroud Ltd Chemical vapour deposition of products
JPS62281913A (ja) * 1986-05-30 1987-12-07 株式会社　ヒロ−・ミラ− 着色鏡及びその製造方法
US5332697A (en) * 1989-05-31 1994-07-26 Smith Rosemary L Formation of silicon nitride by nitridation of porous silicon
JPH03269401A (ja) * 1990-03-19 1991-12-02 Nippon Sheet Glass Co Ltd 装飾反射面付透明体の製法
US5304282A (en) * 1991-04-17 1994-04-19 Flamm Daniel L Processes depending on plasma discharges sustained in a helical resonator
CN1122117C (zh) 1997-12-05 2003-09-24 泰格尔公司 带有沉积屏蔽板的等离子体反应器
US6390019B1 (en) 1998-06-11 2002-05-21 Applied Materials, Inc. Chamber having improved process monitoring window
JP5054874B2 (ja) * 1999-12-02 2012-10-24 ティーガル コーポレイション リアクタ内でプラチナエッチングを行う方法
US6440219B1 (en) * 2000-06-07 2002-08-27 Simplus Systems Corporation Replaceable shielding apparatus
AU2001283944A1 (en) * 2000-09-22 2002-04-02 Aixtron Ag Gas inlet mechanism for cvd-method and device
US6716302B2 (en) * 2000-11-01 2004-04-06 Applied Materials Inc. Dielectric etch chamber with expanded process window
US7780785B2 (en) * 2001-10-26 2010-08-24 Applied Materials, Inc. Gas delivery apparatus for atomic layer deposition
US20090029033A1 (en) * 2007-07-27 2009-01-29 Joseph Chou Method of manufacturing thin-film based PV modules
US8298338B2 (en) * 2007-12-26 2012-10-30 Samsung Electronics Co., Ltd. Chemical vapor deposition apparatus
KR101004822B1 (ko) * 2008-04-18 2010-12-28 삼성엘이디 주식회사 화학 기상 증착 장치
KR100982987B1 (ko) * 2008-04-18 2010-09-17 삼성엘이디 주식회사 화학 기상 증착 장치
JP5457021B2 (ja) * 2008-12-22 2014-04-02 東京エレクトロン株式会社 混合ガスの供給方法及び混合ガスの供給装置
JP5179339B2 (ja) * 2008-12-22 2013-04-10 東京エレクトロン株式会社 混合ガスの供給方法及び混合ガスの供給装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE345859C (de) * 1919-10-26 1922-03-03 Michel Schmierer Glimmlichtroehre zur Erzeugung leuchtender Zeichen, Zeichnungen o. dgl., insbesondere fuer Reklame
US3675066A (en) * 1970-09-04 1972-07-04 Sperry Rand Corp Planar raised cathode alpha-numeric gas discharge indicator
US3757733A (en) * 1971-10-27 1973-09-11 Texas Instruments Inc Radial flow reactor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5538043A (en) * 1978-09-12 1980-03-17 Fujitsu Ltd Dry etching device
JPS5811240U (ja) * 1981-07-14 1983-01-25 株式会社島津製作所 プラズマｃｖｄ装置
JPS59207620A (ja) * 1983-05-10 1984-11-24 Zenko Hirose アモルフアスシリコン成膜装置
JPS60117716A (ja) * 1983-11-30 1985-06-25 Zenko Hirose 成膜方法
JPS6164121A (ja) * 1984-09-05 1986-04-02 Toshiba Corp Ｃｖｄ装置

Also Published As

Publication number Publication date
JPS5732904B2 (OSRAM) 1982-07-14
US4033287A (en) 1977-07-05
FR2339001B1 (OSRAM) 1979-03-09
FR2339001A1 (fr) 1977-08-19
BE850518A (fr) 1977-05-16
GB1563529A (en) 1980-03-26
DE2702120A1 (de) 1977-07-28

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