JPS52128890A - Production of thin film by decompression gas phase growth process - Google Patents

Production of thin film by decompression gas phase growth process

Info

Publication number
JPS52128890A
JPS52128890A JP4492376A JP4492376A JPS52128890A JP S52128890 A JPS52128890 A JP S52128890A JP 4492376 A JP4492376 A JP 4492376A JP 4492376 A JP4492376 A JP 4492376A JP S52128890 A JPS52128890 A JP S52128890A
Authority
JP
Japan
Prior art keywords
thin film
gas phase
growth process
phase growth
production
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4492376A
Other languages
English (en)
Japanese (ja)
Other versions
JPS544712B2 (US20090163788A1-20090625-C00002.png
Inventor
Daijiro Kudo
Kazuo Maeda
Yoshiki Tanigawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP4492376A priority Critical patent/JPS52128890A/ja
Priority to SE7704276A priority patent/SE432162B/xx
Priority to US05/787,495 priority patent/US4179326A/en
Priority to GB16011/77A priority patent/GB1575578A/en
Priority to IT22668/77A priority patent/IT1114781B/it
Priority to DE2718026A priority patent/DE2718026C3/de
Priority to FR7712288A priority patent/FR2348983A1/fr
Publication of JPS52128890A publication Critical patent/JPS52128890A/ja
Publication of JPS544712B2 publication Critical patent/JPS544712B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP4492376A 1976-04-22 1976-04-22 Production of thin film by decompression gas phase growth process Granted JPS52128890A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP4492376A JPS52128890A (en) 1976-04-22 1976-04-22 Production of thin film by decompression gas phase growth process
SE7704276A SE432162B (sv) 1976-04-22 1977-04-14 Forfarande for att utifran en anga bringa en tunn film att tillvexa
US05/787,495 US4179326A (en) 1976-04-22 1977-04-14 Process for the vapor growth of a thin film
GB16011/77A GB1575578A (en) 1976-04-22 1977-04-18 Process for the vapour deposition of a thin film
IT22668/77A IT1114781B (it) 1976-04-22 1977-04-20 Processo per l'accresciemento,da fase vapore,di una sottile pellicola
DE2718026A DE2718026C3 (de) 1976-04-22 1977-04-22 Verfahren zum Beschichten von Halbleiterplättchen aus der Dampfphase und deren Anwendung
FR7712288A FR2348983A1 (fr) 1976-04-22 1977-04-22 Procede de depot d'une couche mince sous forme vapeur

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4492376A JPS52128890A (en) 1976-04-22 1976-04-22 Production of thin film by decompression gas phase growth process

Publications (2)

Publication Number Publication Date
JPS52128890A true JPS52128890A (en) 1977-10-28
JPS544712B2 JPS544712B2 (US20090163788A1-20090625-C00002.png) 1979-03-09

Family

ID=12704980

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4492376A Granted JPS52128890A (en) 1976-04-22 1976-04-22 Production of thin film by decompression gas phase growth process

Country Status (1)

Country Link
JP (1) JPS52128890A (US20090163788A1-20090625-C00002.png)

Also Published As

Publication number Publication date
JPS544712B2 (US20090163788A1-20090625-C00002.png) 1979-03-09

Similar Documents

Publication Publication Date Title
JPS523583A (en) Crystal film forming process
JPS5320767A (en) X-ray mask supporting underlayer and its production
JPS52128890A (en) Production of thin film by decompression gas phase growth process
CA978332A (en) Hydrogen gas manufacturing process
JPS52136573A (en) Cvd apparatus
JPS51135363A (en) Method of manufacturing semiconductors and its equipment
JPS5214600A (en) Process for the production of a thin film of silicon carbide
JPS5245277A (en) Method for production of complementary mis-ic
JPS5234757A (en) Character plate and process for the fabrication thereof
JPS5277773A (en) Watch with calculator
JPS52132675A (en) Vapor-phase growth method of thin film
JPS51120767A (en) Stas type film thermocouple radiation detictor and its manufacturing m ethod
JPS5353962A (en) Production of semicnductor wafers
JPS5210893A (en) Process for production of granular fluorite and hydrogen fluoride from the granular fluorite
JPS51111483A (en) Method of preparing thin layer of compound
JPS5336258A (en) Production of liquid crystal cell
JPS5228414A (en) High freouency hardening method
JPS5352091A (en) Crystal resonator and its production
JPS51151442A (en) Manufacturing process of inner ring material in complex gasket
JPS5215286A (en) Support structure for thickness slide oscillator
JPS52136572A (en) Cvd apparatus
JPS51144400A (en) Process for production of thin film silicon nitride
JPS5289582A (en) Gaseous phase peactor
JPS5221300A (en) Production method of cubic boron nitride
JPS5256857A (en) Production of vapor phase growing multilayer film having high impurity concentration thin layer region