JPS52117580A - Manufacture for mis type integrating circuit - Google Patents
Manufacture for mis type integrating circuitInfo
- Publication number
- JPS52117580A JPS52117580A JP3485776A JP3485776A JPS52117580A JP S52117580 A JPS52117580 A JP S52117580A JP 3485776 A JP3485776 A JP 3485776A JP 3485776 A JP3485776 A JP 3485776A JP S52117580 A JPS52117580 A JP S52117580A
- Authority
- JP
- Japan
- Prior art keywords
- mis type
- manufacture
- integrating circuit
- type integrating
- resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE: To enable MIS type IC of high yield rate and high density easily, by forming all the wirings such as resistors with the multi crystal semiconductor layers to the desired high resistance, making the mask for the parts requiring high resistance, and doping the impurity thru the window opening for the low resistance.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3485776A JPS52117580A (en) | 1976-03-30 | 1976-03-30 | Manufacture for mis type integrating circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3485776A JPS52117580A (en) | 1976-03-30 | 1976-03-30 | Manufacture for mis type integrating circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS52117580A true JPS52117580A (en) | 1977-10-03 |
Family
ID=12425835
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3485776A Pending JPS52117580A (en) | 1976-03-30 | 1976-03-30 | Manufacture for mis type integrating circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS52117580A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5324290A (en) * | 1976-08-18 | 1978-03-06 | Nec Corp | Semiconductor device |
JPS5342577A (en) * | 1976-09-27 | 1978-04-18 | Texas Instruments Inc | Ic resistor element and method of producing same |
JPS5372483A (en) * | 1976-12-09 | 1978-06-27 | Matsushita Electric Ind Co Ltd | Semiconductor device and its manufacture |
JPS54128689A (en) * | 1978-03-27 | 1979-10-05 | Intel Corp | Method of forming contact area between polycrystal sllicon layers |
JPS5570057A (en) * | 1978-11-22 | 1980-05-27 | Hitachi Ltd | Preparation of semiconductor device |
JPS5830151A (en) * | 1981-08-18 | 1983-02-22 | Toshiba Corp | Semiconductor device and manufacture thereof |
JPS6196756A (en) * | 1984-10-17 | 1986-05-15 | Nec Corp | Semiconductor device and manufacture thereof |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4922871A (en) * | 1972-06-20 | 1974-02-28 | ||
JPS501987A (en) * | 1973-04-16 | 1975-01-10 | ||
JPS5011644A (en) * | 1973-06-01 | 1975-02-06 | ||
JPS5040835A (en) * | 1973-08-14 | 1975-04-14 |
-
1976
- 1976-03-30 JP JP3485776A patent/JPS52117580A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4922871A (en) * | 1972-06-20 | 1974-02-28 | ||
JPS501987A (en) * | 1973-04-16 | 1975-01-10 | ||
JPS5011644A (en) * | 1973-06-01 | 1975-02-06 | ||
JPS5040835A (en) * | 1973-08-14 | 1975-04-14 |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5324290A (en) * | 1976-08-18 | 1978-03-06 | Nec Corp | Semiconductor device |
JPS5342577A (en) * | 1976-09-27 | 1978-04-18 | Texas Instruments Inc | Ic resistor element and method of producing same |
JPS5372483A (en) * | 1976-12-09 | 1978-06-27 | Matsushita Electric Ind Co Ltd | Semiconductor device and its manufacture |
JPS5755300B2 (en) * | 1976-12-09 | 1982-11-24 | ||
JPS54128689A (en) * | 1978-03-27 | 1979-10-05 | Intel Corp | Method of forming contact area between polycrystal sllicon layers |
JPS5570057A (en) * | 1978-11-22 | 1980-05-27 | Hitachi Ltd | Preparation of semiconductor device |
JPS5830151A (en) * | 1981-08-18 | 1983-02-22 | Toshiba Corp | Semiconductor device and manufacture thereof |
JPS6196756A (en) * | 1984-10-17 | 1986-05-15 | Nec Corp | Semiconductor device and manufacture thereof |
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