JPS52115192A - Semiconductor resistance element - Google Patents

Semiconductor resistance element

Info

Publication number
JPS52115192A
JPS52115192A JP3120776A JP3120776A JPS52115192A JP S52115192 A JPS52115192 A JP S52115192A JP 3120776 A JP3120776 A JP 3120776A JP 3120776 A JP3120776 A JP 3120776A JP S52115192 A JPS52115192 A JP S52115192A
Authority
JP
Japan
Prior art keywords
resistance element
semiconductor resistance
polycrystalline
junction
high resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3120776A
Other languages
Japanese (ja)
Inventor
Satoshi Meguro
Koichi Nagasawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP3120776A priority Critical patent/JPS52115192A/en
Publication of JPS52115192A publication Critical patent/JPS52115192A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/20—Resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To use the PN junction of polycrystalline Si for circuits such as those for bias point setting which require high resistance by using the phenomena by which the PN junction of polycrystalline Si becomes a high resistance at around V = 0 of I - V characteristics.
JP3120776A 1976-03-24 1976-03-24 Semiconductor resistance element Pending JPS52115192A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3120776A JPS52115192A (en) 1976-03-24 1976-03-24 Semiconductor resistance element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3120776A JPS52115192A (en) 1976-03-24 1976-03-24 Semiconductor resistance element

Publications (1)

Publication Number Publication Date
JPS52115192A true JPS52115192A (en) 1977-09-27

Family

ID=12324967

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3120776A Pending JPS52115192A (en) 1976-03-24 1976-03-24 Semiconductor resistance element

Country Status (1)

Country Link
JP (1) JPS52115192A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59167048A (en) * 1982-12-15 1984-09-20 ソーン、イーエムアイ、ノース、アメリカ、インコーポレーテッド Polycrystalline silicon resistor and method of producing same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59167048A (en) * 1982-12-15 1984-09-20 ソーン、イーエムアイ、ノース、アメリカ、インコーポレーテッド Polycrystalline silicon resistor and method of producing same

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