JPS52109880A - Method of forming narrow gap in semiconductor - Google Patents

Method of forming narrow gap in semiconductor

Info

Publication number
JPS52109880A
JPS52109880A JP981977A JP981977A JPS52109880A JP S52109880 A JPS52109880 A JP S52109880A JP 981977 A JP981977 A JP 981977A JP 981977 A JP981977 A JP 981977A JP S52109880 A JPS52109880 A JP S52109880A
Authority
JP
Japan
Prior art keywords
semiconductor
narrow gap
forming narrow
forming
gap
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP981977A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5514544B2 (de
Inventor
Teii Shimuko Richiyaado
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Corp
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of JPS52109880A publication Critical patent/JPS52109880A/ja
Publication of JPS5514544B2 publication Critical patent/JPS5514544B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66946—Charge transfer devices
    • H01L29/66954—Charge transfer devices with an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/924—To facilitate selective etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/947—Subphotolithographic processing

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Weting (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Memories (AREA)
JP981977A 1976-02-02 1977-02-02 Method of forming narrow gap in semiconductor Granted JPS52109880A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/654,111 US4053349A (en) 1976-02-02 1976-02-02 Method for forming a narrow gap

Publications (2)

Publication Number Publication Date
JPS52109880A true JPS52109880A (en) 1977-09-14
JPS5514544B2 JPS5514544B2 (de) 1980-04-17

Family

ID=24623472

Family Applications (1)

Application Number Title Priority Date Filing Date
JP981977A Granted JPS52109880A (en) 1976-02-02 1977-02-02 Method of forming narrow gap in semiconductor

Country Status (3)

Country Link
US (1) US4053349A (de)
JP (1) JPS52109880A (de)
DE (1) DE2703013A1 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4131497A (en) * 1977-07-12 1978-12-26 International Business Machines Corporation Method of manufacturing self-aligned semiconductor devices
DE2902665A1 (de) * 1979-01-24 1980-08-07 Siemens Ag Verfahren zum herstellen von integrierten mos-schaltungen in silizium-gate- technologie
DE2939488A1 (de) * 1979-09-28 1981-04-16 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung von integrierten halbleiterschaltungen, insbesondere ccd-schaltungen, mit selbstjustierten, nicht ueberlappenden poly-silizium-elektroden
DE2939456A1 (de) * 1979-09-28 1981-04-16 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung von integrierten halbleiterschaltungen, insbesondere ccd-schaltungen, mit selbstjustierten, nichtueberlappenden poly-silizium-elektroden
US4359816A (en) * 1980-07-08 1982-11-23 International Business Machines Corporation Self-aligned metal process for field effect transistor integrated circuits
US4318759A (en) * 1980-07-21 1982-03-09 Data General Corporation Retro-etch process for integrated circuits
JPS5864044A (ja) * 1981-10-14 1983-04-16 Toshiba Corp 半導体装置の製造方法
US4407696A (en) * 1982-12-27 1983-10-04 Mostek Corporation Fabrication of isolation oxidation for MOS circuit
NL8302541A (nl) * 1983-07-15 1985-02-01 Philips Nv Werkwijze ter vervaardiging van een halfgeleiderinrichting, en halfgeleiderinrichting vervaardigd volgens de werkwijze.
US4454002A (en) * 1983-09-19 1984-06-12 Harris Corporation Controlled thermal-oxidation thinning of polycrystalline silicon
CA1260754A (en) * 1983-12-26 1989-09-26 Teiji Majima Method for forming patterns and apparatus used for carrying out the same
JPS60154183A (ja) * 1984-01-25 1985-08-13 Matsushita Electric Works Ltd 赤外線式人体検知装置
GB8406432D0 (en) * 1984-03-12 1984-04-18 British Telecomm Semiconductor devices
NL8402859A (nl) * 1984-09-18 1986-04-16 Philips Nv Werkwijze voor het vervaardigen van submicrongroeven in bijvoorbeeld halfgeleidermateriaal en met deze werkwijze verkregen inrichtingen.
NL8501338A (nl) * 1985-05-10 1986-12-01 Philips Nv Ladingsgekoppelde halfgeleiderinrichting en werkwijze ter vervaardiging daarvan.
NL8501339A (nl) * 1985-05-10 1986-12-01 Philips Nv Halfgeleiderinrichting en werkwijze ter vervaardiging daarvan.
US4652339A (en) * 1986-02-24 1987-03-24 The United States Of America As Represented By The Secretary Of The Air Force CCD gate definition process
GB2262654B (en) * 1991-12-13 1995-07-12 Marconi Gec Ltd Fabrication process
JPH11340436A (ja) * 1998-05-25 1999-12-10 Nec Corp 半導体記憶装置の製造方法
US6961279B2 (en) * 2004-03-10 2005-11-01 Linear Technology Corporation Floating gate nonvolatile memory circuits and methods

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1292060A (en) * 1969-04-15 1972-10-11 Tokyo Shibaura Electric Co A method of manufacturing a semiconductor device
US3810795A (en) * 1972-06-30 1974-05-14 Ibm Method for making self-aligning structure for charge-coupled and bucket brigade devices
US3911560A (en) * 1974-02-25 1975-10-14 Fairchild Camera Instr Co Method for manufacturing a semiconductor device having self-aligned implanted barriers with narrow gaps between electrodes

Also Published As

Publication number Publication date
JPS5514544B2 (de) 1980-04-17
DE2703013A1 (de) 1977-08-11
US4053349A (en) 1977-10-11

Similar Documents

Publication Publication Date Title
JPS5331961A (en) Method of making semiconductor
JPS5370668A (en) Method of forming nntype region in silicon substrate
JPS52109880A (en) Method of forming narrow gap in semiconductor
JPS52113686A (en) Method of producing semiconductor device
JPS5353276A (en) Method of producing semiconductor device
JPS52137276A (en) Method of producing semiconductor device
JPS5294781A (en) Method of producing semiconductor device
JPS5321587A (en) Method of producing semiconductor device
JPS5364486A (en) Semiconductor and method of producing same
JPS531476A (en) Semiconductor element and method of producing same
JPS5310289A (en) Method of producing semiconductor device
JPS52119083A (en) Method of producing semiconductor device
JPS5383585A (en) Semiconductor structure and method of producing same
JPS52119086A (en) Method of forming ic
JPS52141583A (en) Method of producing semiconductor device
JPS5384495A (en) Semiconductor electrode and method of forming same
JPS5331984A (en) Semiconductor structure and method of producing same
JPS5329077A (en) Method of treating semiconductor
JPS5448487A (en) Method of producing semiconductor
JPS535981A (en) Method of producing semiconductor device
JPS52155064A (en) Method of manufacturing semiconductor structure and apparatus therefor
JPS5334480A (en) Method of producing semiconductor element
JPS55115335A (en) Method of forming multiistage mesa in semiconductor structure
JPS52156578A (en) Method of producing semiconductor device
JPS5384680A (en) Method of producing semiconductor