JPS52107777A - Production of semiconductor unit - Google Patents
Production of semiconductor unitInfo
- Publication number
- JPS52107777A JPS52107777A JP2410676A JP2410676A JPS52107777A JP S52107777 A JPS52107777 A JP S52107777A JP 2410676 A JP2410676 A JP 2410676A JP 2410676 A JP2410676 A JP 2410676A JP S52107777 A JPS52107777 A JP S52107777A
- Authority
- JP
- Japan
- Prior art keywords
- production
- semiconductor unit
- area
- puch
- complicating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Local Oxidation Of Silicon (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
- Weting (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2410676A JPS52107777A (en) | 1976-03-08 | 1976-03-08 | Production of semiconductor unit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2410676A JPS52107777A (en) | 1976-03-08 | 1976-03-08 | Production of semiconductor unit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS52107777A true JPS52107777A (en) | 1977-09-09 |
JPS579506B2 JPS579506B2 (ja) | 1982-02-22 |
Family
ID=12129079
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2410676A Granted JPS52107777A (en) | 1976-03-08 | 1976-03-08 | Production of semiconductor unit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS52107777A (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5384571A (en) * | 1976-12-29 | 1978-07-26 | Fujitsu Ltd | Insulating gate type field effect transistor and its manufacture |
JPS55102269A (en) * | 1979-01-29 | 1980-08-05 | Agency Of Ind Science & Technol | Method of fabricating semiconductor device |
JPS55130171A (en) * | 1979-03-29 | 1980-10-08 | Fujitsu Ltd | Mos field effect transistor |
JPS55134974A (en) * | 1979-04-06 | 1980-10-21 | Nec Corp | Manufacturing of semiconductor device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5272580A (en) * | 1975-12-15 | 1977-06-17 | Fujitsu Ltd | Production of semiconductor device |
-
1976
- 1976-03-08 JP JP2410676A patent/JPS52107777A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5272580A (en) * | 1975-12-15 | 1977-06-17 | Fujitsu Ltd | Production of semiconductor device |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5384571A (en) * | 1976-12-29 | 1978-07-26 | Fujitsu Ltd | Insulating gate type field effect transistor and its manufacture |
JPS576706B2 (ja) * | 1976-12-29 | 1982-02-06 | ||
JPS55102269A (en) * | 1979-01-29 | 1980-08-05 | Agency Of Ind Science & Technol | Method of fabricating semiconductor device |
JPH0212012B2 (ja) * | 1979-01-29 | 1990-03-16 | Kogyo Gijutsu Incho | |
JPS55130171A (en) * | 1979-03-29 | 1980-10-08 | Fujitsu Ltd | Mos field effect transistor |
JPH0465549B2 (ja) * | 1979-03-29 | 1992-10-20 | Fujitsu Ltd | |
JPS55134974A (en) * | 1979-04-06 | 1980-10-21 | Nec Corp | Manufacturing of semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS579506B2 (ja) | 1982-02-22 |
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