JPS52103973A - Manufacture of mutual compensation type mis semiconductor device - Google Patents

Manufacture of mutual compensation type mis semiconductor device

Info

Publication number
JPS52103973A
JPS52103973A JP2075876A JP2075876A JPS52103973A JP S52103973 A JPS52103973 A JP S52103973A JP 2075876 A JP2075876 A JP 2075876A JP 2075876 A JP2075876 A JP 2075876A JP S52103973 A JPS52103973 A JP S52103973A
Authority
JP
Japan
Prior art keywords
semiconductor device
manufacture
compensation type
type mis
mutual compensation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2075876A
Other languages
Japanese (ja)
Inventor
Kenji Ichida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP2075876A priority Critical patent/JPS52103973A/en
Publication of JPS52103973A publication Critical patent/JPS52103973A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain the semiconductor device with less production process and to obtain it with no heavy metal contamination and few undulation on its micro pattern, by finishing the injection diffusion in single operation by injecting the impurity matter into the semiconductor base board through the SiO2 film.
JP2075876A 1976-02-26 1976-02-26 Manufacture of mutual compensation type mis semiconductor device Pending JPS52103973A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2075876A JPS52103973A (en) 1976-02-26 1976-02-26 Manufacture of mutual compensation type mis semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2075876A JPS52103973A (en) 1976-02-26 1976-02-26 Manufacture of mutual compensation type mis semiconductor device

Publications (1)

Publication Number Publication Date
JPS52103973A true JPS52103973A (en) 1977-08-31

Family

ID=12036080

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2075876A Pending JPS52103973A (en) 1976-02-26 1976-02-26 Manufacture of mutual compensation type mis semiconductor device

Country Status (1)

Country Link
JP (1) JPS52103973A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56162838A (en) * 1981-05-02 1981-12-15 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS59186319A (en) * 1983-04-07 1984-10-23 Yokogawa Hokushin Electric Corp Manufacture of semiconductor element

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56162838A (en) * 1981-05-02 1981-12-15 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPH0429231B2 (en) * 1981-05-02 1992-05-18
JPS59186319A (en) * 1983-04-07 1984-10-23 Yokogawa Hokushin Electric Corp Manufacture of semiconductor element

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