JPS5122373A - - Google Patents

Info

Publication number
JPS5122373A
JPS5122373A JP50008303A JP830375A JPS5122373A JP S5122373 A JPS5122373 A JP S5122373A JP 50008303 A JP50008303 A JP 50008303A JP 830375 A JP830375 A JP 830375A JP S5122373 A JPS5122373 A JP S5122373A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50008303A
Inventor
Eru Baashin Richaado
Jei Shinguruton Mitsucheru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
INT PURAZUMA CORP
INTAANASHONARU PURAZUMA CORP
Original Assignee
INT PURAZUMA CORP
INTAANASHONARU PURAZUMA CORP
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by INT PURAZUMA CORP, INTAANASHONARU PURAZUMA CORP filed Critical INT PURAZUMA CORP
Publication of JPS5122373A publication Critical patent/JPS5122373A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J65/00—Lamps without any electrode inside the vessel; Lamps with at least one main electrode outside the vessel
    • H01J65/04—Lamps in which a gas filling is excited to luminesce by an external electromagnetic field or by external corpuscular radiation, e.g. for indicating plasma display panels
    • H01J65/042—Lamps in which a gas filling is excited to luminesce by an external electromagnetic field or by external corpuscular radiation, e.g. for indicating plasma display panels by an external electromagnetic field
    • H01J65/044—Lamps in which a gas filling is excited to luminesce by an external electromagnetic field or by external corpuscular radiation, e.g. for indicating plasma display panels by an external electromagnetic field the field being produced by a separate microwave unit
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S422/00—Chemical apparatus and process disinfecting, deodorizing, preserving, or sterilizing
    • Y10S422/906—Plasma or ion generation means

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
JP50008303A 1974-08-16 1975-01-18 Pending JPS5122373A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US498100A US3879597A (en) 1974-08-16 1974-08-16 Plasma etching device and process

Publications (1)

Publication Number Publication Date
JPS5122373A true JPS5122373A (ja) 1976-02-23

Family

ID=23979601

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50008303A Pending JPS5122373A (ja) 1974-08-16 1975-01-18

Country Status (2)

Country Link
US (1) US3879597A (ja)
JP (1) JPS5122373A (ja)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4837143A (ja) * 1971-09-09 1973-06-01
JPS5398819A (en) * 1977-02-08 1978-08-29 Agfa Gevaert Ag Method and system of automatic identification of band film image area
JPS5449073A (en) * 1977-09-26 1979-04-18 Mitsubishi Electric Corp Plasma processing unit
JPS5473026A (en) * 1977-11-22 1979-06-12 Ricoh Co Ltd Copying machine
JPS6122338U (ja) * 1984-07-12 1986-02-08 東京エレクトロン相模株式会社 バッチ式アッシャー
JPS61116324A (ja) * 1984-07-31 1986-06-03 テキサス　インスツルメンツ　インコ−ポレイテツド 空間光変調器の作成方法
JPS61232613A (ja) * 1985-04-08 1986-10-16 Semiconductor Energy Lab Co Ltd プラズマ気相反応装置
JPS62272242A (ja) * 1986-05-20 1987-11-26 Fuji Photo Film Co Ltd 写真焼付方法
JPS6379324A (ja) * 1986-09-22 1988-04-09 Tokyo Electron Ltd アツシング方法およびその装置
JPH05188309A (ja) * 1984-07-31 1993-07-30 Texas Instr Inc <Ti> 空間光変調器の製造方法
JPH06177073A (ja) * 1992-12-07 1994-06-24 Nippon Ee S M Kk エッチング装置

Families Citing this family (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4362632A (en) * 1974-08-02 1982-12-07 Lfe Corporation Gas discharge apparatus
FR2290126A1 (fr) * 1974-10-31 1976-05-28 Anvar Perfectionnements apportes aux dispositifs d'excitation, par des ondes hf, d'une colonne de gaz enfermee dans une enveloppe
US4123663A (en) * 1975-01-22 1978-10-31 Tokyo Shibaura Electric Co., Ltd. Gas-etching device
JPS5276271U (ja) * 1975-12-04 1977-06-07
US4115184A (en) * 1975-12-29 1978-09-19 Northern Telecom Limited Method of plasma etching
JPS5378170A (en) * 1976-12-22 1978-07-11 Toshiba Corp Continuous processor for gas plasma etching
GB1523267A (en) * 1976-04-15 1978-08-31 Hitachi Ltd Plasma etching apparatus
US4056642A (en) * 1976-05-14 1977-11-01 Data General Corporation Method of fabricating metal-semiconductor interfaces
JPS53121469A (en) * 1977-03-31 1978-10-23 Toshiba Corp Gas etching unit
AT365857B (de) * 1977-09-05 1982-02-25 Jakopic Erich Dr Anordnung mit einer atom- bzw. molekularstrahlen- quelle nach dem prinzip der zerstaeubung fester materialien
US4187331A (en) * 1978-08-24 1980-02-05 International Business Machines Corp. Fluorine plasma resist image hardening
US4234622A (en) * 1979-04-11 1980-11-18 The United States Of American As Represented By The Secretary Of The Army Vacuum deposition method
JPS6151633B2 (ja) * 1979-08-09 1986-11-10 Ei Teii Ando Teii Tekunorojiizu Inc
US4298443A (en) * 1979-08-09 1981-11-03 Bell Telephone Laboratories, Incorporated High capacity etching apparatus and method
US4307283A (en) * 1979-09-27 1981-12-22 Eaton Corporation Plasma etching apparatus II-conical-shaped projection
US4297162A (en) * 1979-10-17 1981-10-27 Texas Instruments Incorporated Plasma etching using improved electrode
US4304983A (en) * 1980-06-26 1981-12-08 Rca Corporation Plasma etching device and process
US4282077A (en) * 1980-07-03 1981-08-04 General Dynamics, Pomona Division Uniform plasma etching system
JPS5649528A (en) * 1980-09-04 1981-05-06 Fujitsu Ltd Etching method
US4552831A (en) * 1984-02-06 1985-11-12 International Business Machines Corporation Fabrication method for controlled via hole process
US4631105A (en) * 1985-04-22 1986-12-23 Branson International Plasma Corporation Plasma etching apparatus
US4749440A (en) * 1985-08-28 1988-06-07 Fsi Corporation Gaseous process and apparatus for removing films from substrates
JPS62213126A (ja) * 1986-03-13 1987-09-19 Fujitsu Ltd マイクロ波プラズマ処理装置
US4776923A (en) * 1987-01-20 1988-10-11 Machine Technology, Inc. Plasma product treatment apparatus and methods and gas transport systems for use therein
US4801427A (en) * 1987-02-25 1989-01-31 Adir Jacob Process and apparatus for dry sterilization of medical devices and materials
US4917586A (en) * 1987-02-25 1990-04-17 Adir Jacob Process for dry sterilization of medical devices and materials
US4818488A (en) * 1987-02-25 1989-04-04 Adir Jacob Process and apparatus for dry sterilization of medical devices and materials
US4976920A (en) * 1987-07-14 1990-12-11 Adir Jacob Process for dry sterilization of medical devices and materials
US4931261A (en) * 1987-02-25 1990-06-05 Adir Jacob Apparatus for dry sterilization of medical devices and materials
US5171525A (en) * 1987-02-25 1992-12-15 Adir Jacob Process and apparatus for dry sterilization of medical devices and materials
US5087418A (en) * 1987-02-25 1992-02-11 Adir Jacob Process for dry sterilization of medical devices and materials
US4943417A (en) * 1987-02-25 1990-07-24 Adir Jacob Apparatus for dry sterilization of medical devices and materials
US5200158A (en) * 1987-02-25 1993-04-06 Adir Jacob Process and apparatus for dry sterilization of medical devices and materials
US4836902A (en) * 1987-10-09 1989-06-06 Northern Telecom Limited Method and apparatus for removing coating from substrate
US4859303A (en) * 1987-10-09 1989-08-22 Northern Telecom Limited Method and apparatus for removing coating from substrate
US4900395A (en) * 1989-04-07 1990-02-13 Fsi International, Inc. HF gas etching of wafers in an acid processor
US5198634A (en) * 1990-05-21 1993-03-30 Mattson Brad S Plasma contamination removal process
US5089084A (en) * 1990-12-03 1992-02-18 Micron Technology, Inc. Hydrofluoric acid etcher and cascade rinser
JPH05136094A (ja) * 1991-11-11 1993-06-01 Ramuko Kk プラズマリアクター
US5532447A (en) * 1993-12-06 1996-07-02 Aluminum Company Of America Method of cleaning an aluminum surface by plasma treatment
US5962923A (en) 1995-08-07 1999-10-05 Applied Materials, Inc. Semiconductor device having a low thermal budget metal filling and planarization of contacts, vias and trenches
US6238533B1 (en) 1995-08-07 2001-05-29 Applied Materials, Inc. Integrated PVD system for aluminum hole filling using ionized metal adhesion layer
US6258287B1 (en) * 1996-08-28 2001-07-10 Georgia Tech Research Corporation Method and apparatus for low energy electron enhanced etching of substrates in an AC or DC plasma environment
US6033587A (en) * 1996-09-20 2000-03-07 Georgia Tech Research Corporation Method and apparatus for low energy electron enhanced etching and cleaning of substrates in the positive column of a plasma
US6129807A (en) * 1997-10-06 2000-10-10 Applied Materials, Inc. Apparatus for monitoring processing of a substrate
EP0908921A1 (en) * 1997-10-10 1999-04-14 European Community Process chamber for plasma enhanced chemical vapour deposition and apparatus employing said process chamber
EP1034566A1 (en) * 1997-11-26 2000-09-13 Applied Materials, Inc. Damage-free sculptured coating deposition
US20050272254A1 (en) * 1997-11-26 2005-12-08 Applied Materials, Inc. Method of depositing low resistivity barrier layers for copper interconnects
US7253109B2 (en) * 1997-11-26 2007-08-07 Applied Materials, Inc. Method of depositing a tantalum nitride/tantalum diffusion barrier layer system
US8029105B2 (en) * 2007-10-17 2011-10-04 Eastman Kodak Company Ambient plasma treatment of printer components

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5144566A (ja) * 1974-08-02 1976-04-16 Lfe Corp

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1933306B2 (de) * 1969-07-01 1972-02-10 Siemens AG, 1000 Berlin u 8000 München Verfahren zum betrieb eines lichtbogen hochdruckplasmabrenners und anordnung zur durchfuerhung des verfahrens
GB1279208A (en) * 1970-03-24 1972-06-28 Standard Telephones Cables Ltd Method of and apparatus for producing fine powder
US3677326A (en) * 1970-05-21 1972-07-18 Reynolds Metals Co Method of reducing reaction between adjacent layers of liquid substances having different densities

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5144566A (ja) * 1974-08-02 1976-04-16 Lfe Corp

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4837143A (ja) * 1971-09-09 1973-06-01
JPS5398819A (en) * 1977-02-08 1978-08-29 Agfa Gevaert Ag Method and system of automatic identification of band film image area
JPS5449073A (en) * 1977-09-26 1979-04-18 Mitsubishi Electric Corp Plasma processing unit
JPS5473026A (en) * 1977-11-22 1979-06-12 Ricoh Co Ltd Copying machine
JPS6226462B2 (ja) * 1977-11-22 1987-06-09 Ricoh Kk
JPH0445239Y2 (ja) * 1984-07-12 1992-10-23
JPS6122338U (ja) * 1984-07-12 1986-02-08 東京エレクトロン相模株式会社 バッチ式アッシャー
JPS61116324A (ja) * 1984-07-31 1986-06-03 テキサス　インスツルメンツ　インコ−ポレイテツド 空間光変調器の作成方法
JPH05188308A (ja) * 1984-07-31 1993-07-30 Texas Instr Inc <Ti> 空間光変調器とその製法
JPH05188309A (ja) * 1984-07-31 1993-07-30 Texas Instr Inc <Ti> 空間光変調器の製造方法
JPS61232613A (ja) * 1985-04-08 1986-10-16 Semiconductor Energy Lab Co Ltd プラズマ気相反応装置
JPS62272242A (ja) * 1986-05-20 1987-11-26 Fuji Photo Film Co Ltd 写真焼付方法
JPS6379324A (ja) * 1986-09-22 1988-04-09 Tokyo Electron Ltd アツシング方法およびその装置
JPH06177073A (ja) * 1992-12-07 1994-06-24 Nippon Ee S M Kk エッチング装置

Also Published As

Publication number Publication date
US3879597A (en) 1975-04-22

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