AT365857B - Anordnung mit einer atom- bzw. molekularstrahlen- quelle nach dem prinzip der zerstaeubung fester materialien - Google Patents

Anordnung mit einer atom- bzw. molekularstrahlen- quelle nach dem prinzip der zerstaeubung fester materialien

Info

Publication number
AT365857B
AT365857B AT0635277A AT635277A AT365857B AT 365857 B AT365857 B AT 365857B AT 0635277 A AT0635277 A AT 0635277A AT 635277 A AT635277 A AT 635277A AT 365857 B AT365857 B AT 365857B
Authority
AT
Austria
Prior art keywords
atomic
principle
arrangement
radiation source
solid materials
Prior art date
Application number
AT0635277A
Other languages
English (en)
Other versions
ATA635277A (de
Original Assignee
Jakopic Erich Dr
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jakopic Erich Dr filed Critical Jakopic Erich Dr
Priority to AT0635277A priority Critical patent/AT365857B/de
Priority to CH926278A priority patent/CH637996A5/de
Priority to JP10767378A priority patent/JPS5493355A/ja
Priority to DD20763178A priority patent/DD138679A5/de
Priority to DE19782838676 priority patent/DE2838676A1/de
Publication of ATA635277A publication Critical patent/ATA635277A/de
Application granted granted Critical
Publication of AT365857B publication Critical patent/AT365857B/de

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228Gas flow assisted PVD deposition
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
AT0635277A 1977-09-05 1977-09-05 Anordnung mit einer atom- bzw. molekularstrahlen- quelle nach dem prinzip der zerstaeubung fester materialien AT365857B (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
AT0635277A AT365857B (de) 1977-09-05 1977-09-05 Anordnung mit einer atom- bzw. molekularstrahlen- quelle nach dem prinzip der zerstaeubung fester materialien
CH926278A CH637996A5 (en) 1977-09-05 1978-09-04 Device operating according to the principle of the sputtering of solids by ion bombardment, and use of the invention
JP10767378A JPS5493355A (en) 1977-09-05 1978-09-04 Device for having atomic or molecular flow source by solid material spattering principle
DD20763178A DD138679A5 (de) 1977-09-05 1978-09-04 Anordnung mit einer atom-bzw.molekularstrahlenquelle
DE19782838676 DE2838676A1 (de) 1977-09-05 1978-09-05 Anordnung mit einer atom- bzw. molekularstrahlenquelle nach dem prinzip der zerstaeubung fester materialien

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
AT0635277A AT365857B (de) 1977-09-05 1977-09-05 Anordnung mit einer atom- bzw. molekularstrahlen- quelle nach dem prinzip der zerstaeubung fester materialien

Publications (2)

Publication Number Publication Date
ATA635277A ATA635277A (de) 1981-06-15
AT365857B true AT365857B (de) 1982-02-25

Family

ID=3585458

Family Applications (1)

Application Number Title Priority Date Filing Date
AT0635277A AT365857B (de) 1977-09-05 1977-09-05 Anordnung mit einer atom- bzw. molekularstrahlen- quelle nach dem prinzip der zerstaeubung fester materialien

Country Status (5)

Country Link
JP (1) JPS5493355A (de)
AT (1) AT365857B (de)
CH (1) CH637996A5 (de)
DD (1) DD138679A5 (de)
DE (1) DE2838676A1 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3521053A1 (de) * 1985-06-12 1986-12-18 Leybold-Heraeus GmbH, 5000 Köln Vorrichtung zum aufbringen duenner schichten auf ein substrat
JPS63241164A (ja) * 1987-03-30 1988-10-06 Toshiba Corp スパッタリングターゲットおよび電気配線用合金膜

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3879597A (en) * 1974-08-16 1975-04-22 Int Plasma Corp Plasma etching device and process

Also Published As

Publication number Publication date
DE2838676C2 (de) 1990-08-30
ATA635277A (de) 1981-06-15
CH637996A5 (en) 1983-08-31
DE2838676A1 (de) 1979-03-29
DD138679A5 (de) 1979-11-14
JPS5493355A (en) 1979-07-24

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Legal Events

Date Code Title Description
EIH Change in the person of patent owner
ENE Inventor named
ELJ Ceased due to non-payment of the annual fee