JPS51147269A - Field effect transistor - Google Patents

Field effect transistor

Info

Publication number
JPS51147269A
JPS51147269A JP50070829A JP7082975A JPS51147269A JP S51147269 A JPS51147269 A JP S51147269A JP 50070829 A JP50070829 A JP 50070829A JP 7082975 A JP7082975 A JP 7082975A JP S51147269 A JPS51147269 A JP S51147269A
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
channel
formatioon
substate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50070829A
Other languages
English (en)
Japanese (ja)
Other versions
JPS614196B2 (enrdf_load_stackoverflow
Inventor
Hideo Sunami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP50070829A priority Critical patent/JPS51147269A/ja
Publication of JPS51147269A publication Critical patent/JPS51147269A/ja
Publication of JPS614196B2 publication Critical patent/JPS614196B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
JP50070829A 1975-06-13 1975-06-13 Field effect transistor Granted JPS51147269A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50070829A JPS51147269A (en) 1975-06-13 1975-06-13 Field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50070829A JPS51147269A (en) 1975-06-13 1975-06-13 Field effect transistor

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP59257581A Division JPS60157261A (ja) 1984-12-07 1984-12-07 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS51147269A true JPS51147269A (en) 1976-12-17
JPS614196B2 JPS614196B2 (enrdf_load_stackoverflow) 1986-02-07

Family

ID=13442846

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50070829A Granted JPS51147269A (en) 1975-06-13 1975-06-13 Field effect transistor

Country Status (1)

Country Link
JP (1) JPS51147269A (enrdf_load_stackoverflow)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5710973A (en) * 1980-06-24 1982-01-20 Agency Of Ind Science & Technol Semiconductor device
JPS57192080A (en) * 1981-05-21 1982-11-26 Fujitsu Ltd Semiconductor device
JPS6359349U (enrdf_load_stackoverflow) * 1986-10-07 1988-04-20
JPH02248046A (ja) * 1989-03-22 1990-10-03 Nec Corp ＳｉＯ↓２膜の形成方法
JP2006278674A (ja) * 2005-03-29 2006-10-12 Nec Electronics Corp 電界効果トランジスタとその製造方法、及び半導体装置
US8476701B2 (en) 2010-05-19 2013-07-02 Renesas Electronics Corporation Semiconductor device with gate electrode including a concave portion
US8598651B2 (en) 2010-05-24 2013-12-03 Renesas Electronics Corporation Semiconductor device with transistor having gate insulating film with various thicknesses and manufacturing method thereof
US8921928B2 (en) 2007-09-27 2014-12-30 Fuji Electric Co., Ltd. Semiconductor device with low on resistance

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0356060U (enrdf_load_stackoverflow) * 1989-09-27 1991-05-29
JPH0463985U (enrdf_load_stackoverflow) * 1990-10-05 1992-06-01

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5710973A (en) * 1980-06-24 1982-01-20 Agency Of Ind Science & Technol Semiconductor device
JPS57192080A (en) * 1981-05-21 1982-11-26 Fujitsu Ltd Semiconductor device
JPS6359349U (enrdf_load_stackoverflow) * 1986-10-07 1988-04-20
JPH02248046A (ja) * 1989-03-22 1990-10-03 Nec Corp ＳｉＯ↓２膜の形成方法
JP2006278674A (ja) * 2005-03-29 2006-10-12 Nec Electronics Corp 電界効果トランジスタとその製造方法、及び半導体装置
US8921928B2 (en) 2007-09-27 2014-12-30 Fuji Electric Co., Ltd. Semiconductor device with low on resistance
US8476701B2 (en) 2010-05-19 2013-07-02 Renesas Electronics Corporation Semiconductor device with gate electrode including a concave portion
US8871592B2 (en) 2010-05-19 2014-10-28 Renesas Electronics Corporation Method of manufacturing a semiconductor device including concave portion
US8598651B2 (en) 2010-05-24 2013-12-03 Renesas Electronics Corporation Semiconductor device with transistor having gate insulating film with various thicknesses and manufacturing method thereof

Also Published As

Publication number Publication date
JPS614196B2 (enrdf_load_stackoverflow) 1986-02-07

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