JPS51146187A - Diode device fabrication method - Google Patents

Diode device fabrication method

Info

Publication number
JPS51146187A
JPS51146187A JP6953775A JP6953775A JPS51146187A JP S51146187 A JPS51146187 A JP S51146187A JP 6953775 A JP6953775 A JP 6953775A JP 6953775 A JP6953775 A JP 6953775A JP S51146187 A JPS51146187 A JP S51146187A
Authority
JP
Japan
Prior art keywords
fabrication method
diode device
device fabrication
corrector
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6953775A
Other languages
Japanese (ja)
Inventor
Hisayuki Higuchi
Keijiro Uehara
Yoichi Tamaoki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP6953775A priority Critical patent/JPS51146187A/en
Publication of JPS51146187A publication Critical patent/JPS51146187A/en
Pending legal-status Critical Current

Links

Landscapes

  • Element Separation (AREA)
  • Weting (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE: A diode device fabrication method, that prevents short circuit between an emitter and corrector of an iso-planer type transistor and furthermore protects reduction of pressure at a base sphere.
COPYRIGHT: (C)1976,JPO&Japio
JP6953775A 1975-06-11 1975-06-11 Diode device fabrication method Pending JPS51146187A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6953775A JPS51146187A (en) 1975-06-11 1975-06-11 Diode device fabrication method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6953775A JPS51146187A (en) 1975-06-11 1975-06-11 Diode device fabrication method

Publications (1)

Publication Number Publication Date
JPS51146187A true JPS51146187A (en) 1976-12-15

Family

ID=13405557

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6953775A Pending JPS51146187A (en) 1975-06-11 1975-06-11 Diode device fabrication method

Country Status (1)

Country Link
JP (1) JPS51146187A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53120376A (en) * 1977-03-30 1978-10-20 Fujitsu Ltd Production of semiconductor device
JPS5421173A (en) * 1977-07-18 1979-02-17 Nippon Telegr & Teleph Corp <Ntt> Manufacture for semiconductor having oxide film
JPS60177646A (en) * 1984-02-24 1985-09-11 Oki Electric Ind Co Ltd Manufacture of semiconductor integrated circuit device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53120376A (en) * 1977-03-30 1978-10-20 Fujitsu Ltd Production of semiconductor device
JPS5421173A (en) * 1977-07-18 1979-02-17 Nippon Telegr & Teleph Corp <Ntt> Manufacture for semiconductor having oxide film
JPS60177646A (en) * 1984-02-24 1985-09-11 Oki Electric Ind Co Ltd Manufacture of semiconductor integrated circuit device
JPH0311544B2 (en) * 1984-02-24 1991-02-18 Oki Electric Ind Co Ltd

Similar Documents

Publication Publication Date Title
JPS5210074A (en) Intergrated circuit device
JPS51115775A (en) Semiconductor apparatus
JPS51146187A (en) Diode device fabrication method
JPS5230162A (en) Semiconductor device
JPS51146186A (en) Diode device fabrication method
JPS51116689A (en) Semiconductor laser device
JPS52117554A (en) Manufacturing method of semiconductor device
JPS51126083A (en) Manufacturing method of semi-conductor equpment
JPS5223273A (en) Method of manufacturing semiconductor element
JPS51113478A (en) The manufacturing method of semiconductor device
JPS51114081A (en) Construction of a semi-conductor device
JPS51146190A (en) Diode circuit
JPS51147188A (en) Semicoductor device
JPS51134587A (en) Production method of semiconductor integrated-circuit device
JPS51135367A (en) Semiconductor device
JPS535574A (en) Manufacture of semiconductor device
JPS51112279A (en) Semiconductor device
JPS5368163A (en) Production of flip chip
JPS51138388A (en) High voltage withstand semiconductor device
JPS51122364A (en) Mos type semiconductor integrated circuit equipment
JPS51151089A (en) Manufacturing method of a semiconductor
JPS51111064A (en) Semiconductor device
JPS51138343A (en) Memory device
JPS51151088A (en) Manufacturing method of a semiconductor integrated circuit apparatus
JPS5220768A (en) Manufacturing method of semi-conductor unit