JPS51134076A - Insultation gate-type field- effect transistor - Google Patents

Insultation gate-type field- effect transistor

Info

Publication number
JPS51134076A
JPS51134076A JP5831675A JP5831675A JPS51134076A JP S51134076 A JPS51134076 A JP S51134076A JP 5831675 A JP5831675 A JP 5831675A JP 5831675 A JP5831675 A JP 5831675A JP S51134076 A JPS51134076 A JP S51134076A
Authority
JP
Japan
Prior art keywords
insultation
gate
effect transistor
type field
fet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5831675A
Other languages
Japanese (ja)
Other versions
JPS6027191B2 (en
Inventor
Hidemi Takakuwa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP50058316A priority Critical patent/JPS6027191B2/en
Publication of JPS51134076A publication Critical patent/JPS51134076A/en
Publication of JPS6027191B2 publication Critical patent/JPS6027191B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To improve pressure resistance at the drain side brim of the base area in the double-diffusion type MIS-FET.
COPYRIGHT: (C)1976,JPO&Japio
JP50058316A 1975-05-15 1975-05-15 Insulated gate field effect transistor Expired JPS6027191B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50058316A JPS6027191B2 (en) 1975-05-15 1975-05-15 Insulated gate field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50058316A JPS6027191B2 (en) 1975-05-15 1975-05-15 Insulated gate field effect transistor

Publications (2)

Publication Number Publication Date
JPS51134076A true JPS51134076A (en) 1976-11-20
JPS6027191B2 JPS6027191B2 (en) 1985-06-27

Family

ID=13080845

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50058316A Expired JPS6027191B2 (en) 1975-05-15 1975-05-15 Insulated gate field effect transistor

Country Status (1)

Country Link
JP (1) JPS6027191B2 (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5374388A (en) * 1976-12-13 1978-07-01 Ibm Lart current and voltage characteristic mosfet
JPS545674A (en) * 1977-06-15 1979-01-17 Sony Corp Semiconductor device
JPS5424583A (en) * 1977-07-26 1979-02-23 Victor Co Of Japan Ltd Mos field effect transistor
JPS5553462A (en) * 1978-10-13 1980-04-18 Int Rectifier Corp Mosfet element
JPS62122175A (en) * 1986-08-22 1987-06-03 Nec Corp Semiconductor device
US5817546A (en) * 1994-06-23 1998-10-06 Stmicroelectronics S.R.L. Process of making a MOS-technology power device
US5874338A (en) * 1994-06-23 1999-02-23 Sgs-Thomson Microelectronics S.R.L. MOS-technology power device and process of making same
CN115985956A (en) * 2023-03-20 2023-04-18 苏州锴威特半导体股份有限公司 Annular gate SiC MOSFET power device and manufacturing method thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4913119A (en) * 1972-06-05 1974-02-05
JPS5046081A (en) * 1973-08-28 1975-04-24

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4913119A (en) * 1972-06-05 1974-02-05
JPS5046081A (en) * 1973-08-28 1975-04-24

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5374388A (en) * 1976-12-13 1978-07-01 Ibm Lart current and voltage characteristic mosfet
JPS545674A (en) * 1977-06-15 1979-01-17 Sony Corp Semiconductor device
JPS6136389B2 (en) * 1977-06-15 1986-08-18 Sony Corp
JPS5424583A (en) * 1977-07-26 1979-02-23 Victor Co Of Japan Ltd Mos field effect transistor
JPS5553462A (en) * 1978-10-13 1980-04-18 Int Rectifier Corp Mosfet element
JPH0370387B2 (en) * 1978-10-13 1991-11-07 Int Rectifier Corp
US5598018A (en) * 1978-10-13 1997-01-28 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US5742087A (en) * 1978-10-13 1998-04-21 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
JPS62122175A (en) * 1986-08-22 1987-06-03 Nec Corp Semiconductor device
US5817546A (en) * 1994-06-23 1998-10-06 Stmicroelectronics S.R.L. Process of making a MOS-technology power device
US5874338A (en) * 1994-06-23 1999-02-23 Sgs-Thomson Microelectronics S.R.L. MOS-technology power device and process of making same
CN115985956A (en) * 2023-03-20 2023-04-18 苏州锴威特半导体股份有限公司 Annular gate SiC MOSFET power device and manufacturing method thereof

Also Published As

Publication number Publication date
JPS6027191B2 (en) 1985-06-27

Similar Documents

Publication Publication Date Title
JPS5435689A (en) Semiconductor integrated circuit device
JPS5279679A (en) Semiconductor memory device
JPS535581A (en) Schottky gate type field effect transistor
JPS51134076A (en) Insultation gate-type field- effect transistor
JPS52137922A (en) Solid photographing device
JPS528729A (en) Type-drum
JPS5439579A (en) Semiconductor device of field effect type
JPS5215274A (en) Semiconductor device
JPS525273A (en) Transistor
JPS5223274A (en) Self-matching type semiconductor device
JPS5227279A (en) Semiconductor unit
JPS538072A (en) Semiconductor device
JPS5285474A (en) Semiconductor device
JPS5214363A (en) Can-sealed power transistor
JPS51126772A (en) Electrolytic effect type semiconductor unit
JPS526086A (en) Production method of semiconductor device
JPS5423478A (en) Semiconductor device of field effect type
JPS5435684A (en) Junction type field effect transistor
JPS5352059A (en) Electrode production of semiconductor unit
JPS5372579A (en) Junction-type field effect transistor
JPS5212582A (en) Insulated gate type semi-conductor device
JPS52119872A (en) Manufacture of semi-conductor device
JPS5268383A (en) Manufacture of semiconductor device
JPS52127078A (en) Semiconductor device
JPS51113471A (en) The manufacturing method of flat-shaped field-effect transistor