JPS51134076A - Insultation gate-type field- effect transistor - Google Patents
Insultation gate-type field- effect transistorInfo
- Publication number
- JPS51134076A JPS51134076A JP5831675A JP5831675A JPS51134076A JP S51134076 A JPS51134076 A JP S51134076A JP 5831675 A JP5831675 A JP 5831675A JP 5831675 A JP5831675 A JP 5831675A JP S51134076 A JPS51134076 A JP S51134076A
- Authority
- JP
- Japan
- Prior art keywords
- insultation
- gate
- effect transistor
- type field
- fet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To improve pressure resistance at the drain side brim of the base area in the double-diffusion type MIS-FET.
COPYRIGHT: (C)1976,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50058316A JPS6027191B2 (en) | 1975-05-15 | 1975-05-15 | Insulated gate field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50058316A JPS6027191B2 (en) | 1975-05-15 | 1975-05-15 | Insulated gate field effect transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS51134076A true JPS51134076A (en) | 1976-11-20 |
JPS6027191B2 JPS6027191B2 (en) | 1985-06-27 |
Family
ID=13080845
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50058316A Expired JPS6027191B2 (en) | 1975-05-15 | 1975-05-15 | Insulated gate field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6027191B2 (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5374388A (en) * | 1976-12-13 | 1978-07-01 | Ibm | Lart current and voltage characteristic mosfet |
JPS545674A (en) * | 1977-06-15 | 1979-01-17 | Sony Corp | Semiconductor device |
JPS5424583A (en) * | 1977-07-26 | 1979-02-23 | Victor Co Of Japan Ltd | Mos field effect transistor |
JPS5553462A (en) * | 1978-10-13 | 1980-04-18 | Int Rectifier Corp | Mosfet element |
JPS62122175A (en) * | 1986-08-22 | 1987-06-03 | Nec Corp | Semiconductor device |
US5817546A (en) * | 1994-06-23 | 1998-10-06 | Stmicroelectronics S.R.L. | Process of making a MOS-technology power device |
US5874338A (en) * | 1994-06-23 | 1999-02-23 | Sgs-Thomson Microelectronics S.R.L. | MOS-technology power device and process of making same |
CN115985956A (en) * | 2023-03-20 | 2023-04-18 | 苏州锴威特半导体股份有限公司 | Annular gate SiC MOSFET power device and manufacturing method thereof |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4913119A (en) * | 1972-06-05 | 1974-02-05 | ||
JPS5046081A (en) * | 1973-08-28 | 1975-04-24 |
-
1975
- 1975-05-15 JP JP50058316A patent/JPS6027191B2/en not_active Expired
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4913119A (en) * | 1972-06-05 | 1974-02-05 | ||
JPS5046081A (en) * | 1973-08-28 | 1975-04-24 |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5374388A (en) * | 1976-12-13 | 1978-07-01 | Ibm | Lart current and voltage characteristic mosfet |
JPS545674A (en) * | 1977-06-15 | 1979-01-17 | Sony Corp | Semiconductor device |
JPS6136389B2 (en) * | 1977-06-15 | 1986-08-18 | Sony Corp | |
JPS5424583A (en) * | 1977-07-26 | 1979-02-23 | Victor Co Of Japan Ltd | Mos field effect transistor |
JPS5553462A (en) * | 1978-10-13 | 1980-04-18 | Int Rectifier Corp | Mosfet element |
JPH0370387B2 (en) * | 1978-10-13 | 1991-11-07 | Int Rectifier Corp | |
US5598018A (en) * | 1978-10-13 | 1997-01-28 | International Rectifier Corporation | High power MOSFET with low on-resistance and high breakdown voltage |
US5742087A (en) * | 1978-10-13 | 1998-04-21 | International Rectifier Corporation | High power MOSFET with low on-resistance and high breakdown voltage |
JPS62122175A (en) * | 1986-08-22 | 1987-06-03 | Nec Corp | Semiconductor device |
US5817546A (en) * | 1994-06-23 | 1998-10-06 | Stmicroelectronics S.R.L. | Process of making a MOS-technology power device |
US5874338A (en) * | 1994-06-23 | 1999-02-23 | Sgs-Thomson Microelectronics S.R.L. | MOS-technology power device and process of making same |
CN115985956A (en) * | 2023-03-20 | 2023-04-18 | 苏州锴威特半导体股份有限公司 | Annular gate SiC MOSFET power device and manufacturing method thereof |
Also Published As
Publication number | Publication date |
---|---|
JPS6027191B2 (en) | 1985-06-27 |
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