JPS51128285A - Solid photographing unit - Google Patents

Solid photographing unit

Info

Publication number
JPS51128285A
JPS51128285A JP50052735A JP5273575A JPS51128285A JP S51128285 A JPS51128285 A JP S51128285A JP 50052735 A JP50052735 A JP 50052735A JP 5273575 A JP5273575 A JP 5273575A JP S51128285 A JPS51128285 A JP S51128285A
Authority
JP
Japan
Prior art keywords
photographing unit
solid photographing
solid
electrodesd
oxigen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50052735A
Other languages
English (en)
Japanese (ja)
Inventor
Yoshiyuki Kawana
Motoaki Abe
Hiroyuki Matsumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP50052735A priority Critical patent/JPS51128285A/ja
Priority to CA250,989A priority patent/CA1062355A/fr
Priority to GB1688176A priority patent/GB1518459A/en
Priority to NL7604557A priority patent/NL7604557A/xx
Priority to DE19762618964 priority patent/DE2618964C2/de
Priority to FR7613049A priority patent/FR2309982A1/fr
Publication of JPS51128285A publication Critical patent/JPS51128285A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76866—Surface Channel CCD

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP50052735A 1975-04-30 1975-04-30 Solid photographing unit Pending JPS51128285A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP50052735A JPS51128285A (en) 1975-04-30 1975-04-30 Solid photographing unit
CA250,989A CA1062355A (fr) 1975-04-30 1976-04-26 Detecteur d'image a dispositif a transfert de charge
GB1688176A GB1518459A (en) 1975-04-30 1976-04-26 Charge coupled image sensor devices
NL7604557A NL7604557A (nl) 1975-04-30 1976-04-28 Ladingsgekoppelde beeldopneeminrichting.
DE19762618964 DE2618964C2 (de) 1975-04-30 1976-04-29 Ladungsgekoppelte Bildabtastvorrichtung
FR7613049A FR2309982A1 (fr) 1975-04-30 1976-04-30 Transducteur d'images a couplage de charge

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50052735A JPS51128285A (en) 1975-04-30 1975-04-30 Solid photographing unit

Publications (1)

Publication Number Publication Date
JPS51128285A true JPS51128285A (en) 1976-11-09

Family

ID=12923174

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50052735A Pending JPS51128285A (en) 1975-04-30 1975-04-30 Solid photographing unit

Country Status (6)

Country Link
JP (1) JPS51128285A (fr)
CA (1) CA1062355A (fr)
DE (1) DE2618964C2 (fr)
FR (1) FR2309982A1 (fr)
GB (1) GB1518459A (fr)
NL (1) NL7604557A (fr)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3826926A (en) * 1972-11-29 1974-07-30 Westinghouse Electric Corp Charge coupled device area imaging array
JPS5824951B2 (ja) * 1974-10-09 1983-05-24 ソニー株式会社 コウガクソウチ

Also Published As

Publication number Publication date
DE2618964A1 (de) 1976-11-11
FR2309982B1 (fr) 1979-08-31
NL7604557A (nl) 1976-11-02
DE2618964C2 (de) 1984-06-14
CA1062355A (fr) 1979-09-11
GB1518459A (en) 1978-07-19
FR2309982A1 (fr) 1976-11-26

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