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Hitachi Ltd
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Hitachi Ltd
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Application filed by Hitachi LtdfiledCriticalHitachi Ltd
Priority to JP13191774ApriorityCriticalpatent/JPS51126046A/en
Publication of JPS51126046ApublicationCriticalpatent/JPS51126046A/en
PURPOSE: A simple method for the purpose of controlling failure or normal approaching to hetero epitaxial growth of different variable crystals lattice interface.
COPYRIGHT: (C)1976,JPO&Japio
JP13191774A1974-11-181974-11-18Gaseous phase growth method of compounded semi-conductors
PendingJPS51126046A
(en)