JPS51110931A - - Google Patents

Info

Publication number
JPS51110931A
JPS51110931A JP51020231A JP2023176A JPS51110931A JP S51110931 A JPS51110931 A JP S51110931A JP 51020231 A JP51020231 A JP 51020231A JP 2023176 A JP2023176 A JP 2023176A JP S51110931 A JPS51110931 A JP S51110931A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP51020231A
Inventor
Etsuchi Heren Richaado
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Teletype Corp
Original Assignee
Teletype Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Teletype Corp filed Critical Teletype Corp
Publication of JPS51110931A publication Critical patent/JPS51110931A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/01—Shaping pulses
    • H03K5/02—Shaping pulses by amplifying
    • H03K5/023—Shaping pulses by amplifying using field effect transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/24—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Power Engineering (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
JP51020231A 1975-03-05 1976-02-27 Pending JPS51110931A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/555,482 US4004284A (en) 1975-03-05 1975-03-05 Binary voltage-differential sensing circuits, and sense/refresh amplifier circuits for random-access memories

Publications (1)

Publication Number Publication Date
JPS51110931A true JPS51110931A (ja) 1976-09-30

Family

ID=24217423

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51020231A Pending JPS51110931A (ja) 1975-03-05 1976-02-27

Country Status (6)

Country Link
US (1) US4004284A (ja)
JP (1) JPS51110931A (ja)
DE (1) DE2608119A1 (ja)
FR (1) FR2303346A1 (ja)
GB (1) GB1535237A (ja)
NL (1) NL7602042A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52152129A (en) * 1976-06-14 1977-12-17 Nippon Telegr & Teleph Corp <Ntt> Memory signal detection-amplification unit
JPS54101229A (en) * 1978-01-26 1979-08-09 Nec Corp Memory circuit

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51139221A (en) * 1975-05-28 1976-12-01 Hitachi Ltd Method of and apparatus for measuring reflesh period of mis dynamic ty pe memory
US4156938A (en) * 1975-12-29 1979-05-29 Mostek Corporation MOSFET Memory chip with single decoder and bi-level interconnect lines
US4069474A (en) * 1976-04-15 1978-01-17 National Semiconductor Corporation MOS Dynamic random access memory having an improved sensing circuit
US4069475A (en) * 1976-04-15 1978-01-17 National Semiconductor Corporation MOS Dynamic random access memory having an improved sense and restore circuit
DE2623219B2 (de) * 1976-05-24 1978-10-12 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Betreiben einer Leseverstärkerschaltung für einen dynamischen MOS-Speicher und Anordnung zur Durchführung dieses Verfahrens
US5434438A (en) * 1976-09-13 1995-07-18 Texas Instruments Inc. Random access memory cell with a capacitor
EP0019987A1 (en) * 1979-06-01 1980-12-10 Motorola, Inc. High speed IGFET sense amplifier/latch
GB2063601B (en) * 1979-11-12 1984-02-29 Hughes Microelectronics Ltd Non-volatile semiconductor memory circuits
JPH0449194B2 (ja) * 1980-06-02 1992-08-10 Mostek Corp
US4458336A (en) * 1980-10-22 1984-07-03 Fujitsu Limited Semiconductor memory circuit
EP0239913B2 (en) * 1980-10-22 1995-05-10 Fujitsu Limited Semiconductor memory circuit
US4625300A (en) * 1982-12-01 1986-11-25 Texas Instruments Incorporated Single-ended sense amplifier for dynamic memory array
US4598389A (en) * 1984-10-01 1986-07-01 Texas Instruments Incorporated Single-ended CMOS sense amplifier
JPH0793009B2 (ja) * 1984-12-13 1995-10-09 株式会社東芝 半導体記憶装置
JPS6448296A (en) * 1987-05-01 1989-02-22 Texas Instruments Inc Hybrid cmos bipolar memory cell
US4858183A (en) * 1987-06-02 1989-08-15 Texas Instruments Incorporated ECL high speed semiconductor memory and method of accessing stored information therein
LU87431A1 (de) * 1988-06-08 1989-06-14 Siemens Ag Breitbandsignal-koppeleinrichtung
LU87566A1 (de) * 1989-03-22 1990-01-08 Siemens Ag Breitbandsignal-koppeleinrichtung
FR2650452B1 (fr) * 1989-07-27 1991-11-15 Sgs Thomson Microelectronics Point de croisement pour matrice de commutation
DE59008031D1 (de) * 1990-04-12 1995-01-26 Siemens Ag Breitbandsignal-Koppeleinrichtung.
US7629817B2 (en) * 2007-02-09 2009-12-08 Fujitsu Limited System and apparatus for aperture time improvement

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE789500A (fr) * 1971-09-30 1973-03-29 Siemens Ag Memoire a semiconducteurs avec elements de memorisation a un seul transistor
US3760381A (en) * 1972-06-30 1973-09-18 Ibm Stored charge memory detection circuit
AT335777B (de) * 1972-12-19 1977-03-25 Siemens Ag Regenerierschaltung fur binarsignale nach art eines getasteten flipflops
DE2309192C3 (de) * 1973-02-23 1975-08-14 Siemens Ag, 1000 Berlin Und 8000 Muenchen Regenerierschaltung nach Art eines getasteten Flipflops und Verfahren zum Betrieb einer solchen Regenerierschaltung
US3838404A (en) * 1973-05-17 1974-09-24 Teletype Corp Random access memory system and cell

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52152129A (en) * 1976-06-14 1977-12-17 Nippon Telegr & Teleph Corp <Ntt> Memory signal detection-amplification unit
JPS54101229A (en) * 1978-01-26 1979-08-09 Nec Corp Memory circuit
JPS6048073B2 (ja) * 1978-01-26 1985-10-25 日本電気株式会社 メモリ回路

Also Published As

Publication number Publication date
NL7602042A (nl) 1976-09-07
GB1535237A (en) 1978-12-13
DE2608119A1 (de) 1976-09-16
US4004284A (en) 1977-01-18
FR2303346A1 (fr) 1976-10-01

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