JPS51108564A - - Google Patents

Info

Publication number
JPS51108564A
JPS51108564A JP50153889A JP15388975A JPS51108564A JP S51108564 A JPS51108564 A JP S51108564A JP 50153889 A JP50153889 A JP 50153889A JP 15388975 A JP15388975 A JP 15388975A JP S51108564 A JPS51108564 A JP S51108564A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50153889A
Inventor
Emu Uezaasubai Junia Sukotsuto
Shii Uiruson Aaru
Jei Suroon Benjamin
Shii Maachin Robaato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of JPS51108564A publication Critical patent/JPS51108564A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
    • H03K19/088—Transistor-transistor logic
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01—Modifications for accelerating switching
    • H03K19/013—Modifications for accelerating switching in bipolar transistor circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/67—Complementary BJTs
    • H10D84/673—Vertical complementary BJTs

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Power Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Logic Circuits (AREA)
JP50153889A 1974-12-23 1975-12-23 Pending JPS51108564A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/535,405 US3999080A (en) 1974-12-23 1974-12-23 Transistor coupled logic circuit

Publications (1)

Publication Number Publication Date
JPS51108564A true JPS51108564A (ja) 1976-09-25

Family

ID=24134040

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50153889A Pending JPS51108564A (ja) 1974-12-23 1975-12-23

Country Status (5)

Country Link
US (1) US3999080A (ja)
JP (1) JPS51108564A (ja)
DE (1) DE2558017C2 (ja)
FR (1) FR2296312A1 (ja)
GB (1) GB1525499A (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS567464A (en) * 1979-06-29 1981-01-26 Hitachi Ltd Semiconductor integrated circuit device
JPS60157330A (ja) * 1983-12-23 1985-08-17 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン 電圧制限回路
JPS63250217A (ja) * 1987-03-23 1988-10-18 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン Ｔｔｌ駆動回路

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4159915A (en) * 1977-10-25 1979-07-03 International Business Machines Corporation Method for fabrication vertical NPN and PNP structures utilizing ion-implantation
US4339675A (en) * 1979-08-13 1982-07-13 Texas Instruments Incorporated Logic circuit having an improved disable circuit
US4330723A (en) * 1979-08-13 1982-05-18 Fairchild Camera And Instrument Corporation Transistor logic output device for diversion of Miller current
US4339676A (en) * 1979-08-13 1982-07-13 Texas Instruments Incorporated Logic circuit having a selectable output mode
US4413194A (en) * 1981-07-10 1983-11-01 Motorola, Inc. TTL Output circuit having means for preventing output voltage excursions induced by negative current reflections
JPS5830235A (ja) * 1981-08-18 1983-02-22 Fujitsu Ltd ゲ−トアレイ
US4415817A (en) * 1981-10-08 1983-11-15 Signetics Corporation Bipolar logic gate including circuitry to prevent turn-off and deep saturation of pull-down transistor
US4424455A (en) * 1982-04-22 1984-01-03 Motorola, Inc. Glitch eliminating data selector
JPS59181724A (ja) * 1983-03-31 1984-10-16 Fujitsu Ltd ゲ−トアレイｌｓｉ装置
US4583051A (en) * 1984-11-06 1986-04-15 Precision Monolithics, Inc. Extended range amplifier circuit
US4675552A (en) * 1985-02-11 1987-06-23 Harris Corporation Single input/multiple output logic interface circuit having minimized voltage swing
FR2589296B1 (fr) * 1985-10-29 1987-11-27 Thomson Csf Circuit de commande en parallele d'un grand nombre de cellules logiques de type stl
US4975603A (en) * 1986-07-02 1990-12-04 Texas Instruments Incorporated Method and circuitry for compensating for negative internal ground voltage glitches
US4920286A (en) * 1986-07-02 1990-04-24 Texas Instruments Incorporated Method and circuitry for compensating for negative internal ground voltage glitches
JPS6378617A (ja) * 1986-09-22 1988-04-08 Mitsubishi Electric Corp バイポ−ラ論理回路
US4893032A (en) * 1987-03-23 1990-01-09 International Business Machines Corp. Non-saturating temperature independent voltage output driver with adjustable down level
US4868424A (en) * 1987-11-24 1989-09-19 Fairchild Semiconductor Corp. TTL circuit with increased transient drive
DE3739872A1 (de) * 1987-11-25 1989-06-08 Texas Instruments Deutschland Integrierte schaltung
US4874970A (en) * 1988-05-11 1989-10-17 Applied Micro Circuits Corporation ECL output with Darlington or common collector-common emitter drive

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL282779A (ja) * 1961-09-08
US3217181A (en) * 1962-09-11 1965-11-09 Rca Corp Logic switching circuit comprising a plurality of discrete inputs
US3394268A (en) * 1965-02-01 1968-07-23 Bell Telephone Labor Inc Logic switching circuit
US3515899A (en) * 1966-06-08 1970-06-02 Northern Electric Co Logic gate with stored charge carrier leakage path
US3544808A (en) * 1967-03-25 1970-12-01 Nippon Telegraph & Telephone High speed saturation mode switching circuit for a capacitive load
US3624620A (en) * 1969-06-23 1971-11-30 Honeywell Inc Memory address selection circuitry
BE778654A (fr) * 1971-04-05 1972-05-16 Burroughs Corp Circuit logique perfectionne

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS567464A (en) * 1979-06-29 1981-01-26 Hitachi Ltd Semiconductor integrated circuit device
JPS60157330A (ja) * 1983-12-23 1985-08-17 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン 電圧制限回路
JPS63250217A (ja) * 1987-03-23 1988-10-18 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン Ｔｔｌ駆動回路

Also Published As

Publication number Publication date
FR2296312A1 (fr) 1976-07-23
US3999080A (en) 1976-12-21
GB1525499A (en) 1978-09-20
DE2558017A1 (de) 1976-07-01
FR2296312B1 (ja) 1982-12-10
DE2558017C2 (de) 1985-02-14

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