JPS5098796A - - Google Patents

Info

Publication number
JPS5098796A
JPS5098796A JP14769174A JP14769174A JPS5098796A JP S5098796 A JPS5098796 A JP S5098796A JP 14769174 A JP14769174 A JP 14769174A JP 14769174 A JP14769174 A JP 14769174A JP S5098796 A JPS5098796 A JP S5098796A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14769174A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5098796A publication Critical patent/JPS5098796A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8316—Multi-layer electrodes comprising at least one discontinuous layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H10W72/01515—
    • H10W72/075—
    • H10W72/884—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Led Device Packages (AREA)
  • Led Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Light Receiving Elements (AREA)
JP14769174A 1973-12-26 1974-12-24 Pending JPS5098796A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US427803A US3909929A (en) 1973-12-26 1973-12-26 Method of making contacts to semiconductor light conversion elements

Publications (1)

Publication Number Publication Date
JPS5098796A true JPS5098796A (ja) 1975-08-06

Family

ID=23696348

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14769174A Pending JPS5098796A (ja) 1973-12-26 1974-12-24

Country Status (3)

Country Link
US (1) US3909929A (ja)
JP (1) JPS5098796A (ja)
DE (1) DE2461210A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5784188A (en) * 1980-11-13 1982-05-26 Toshiba Corp Semiconductor device
JPS5889956U (ja) * 1981-12-11 1983-06-17 三洋電機株式会社 発光ダイオ−ド素子
US6552367B1 (en) 1999-10-08 2003-04-22 Epistar Corporation High brightness light emitting diode having a layer of distributed contacts

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4035830A (en) * 1974-04-29 1977-07-12 Raytheon Company Composite semiconductor circuit and method of manufacture
US4042951A (en) * 1975-09-25 1977-08-16 Texas Instruments Incorporated Gold-germanium alloy contacts for a semiconductor device
US4232440A (en) * 1979-02-27 1980-11-11 Bell Telephone Laboratories, Incorporated Contact structure for light emitting device
US4495514A (en) * 1981-03-02 1985-01-22 Eastman Kodak Company Transparent electrode light emitting diode and method of manufacture
US4982267A (en) * 1985-11-18 1991-01-01 Atmel Corporation Integrated semiconductor package
US4966862A (en) * 1989-08-28 1990-10-30 Cree Research, Inc. Method of production of light emitting diodes
US5917202A (en) * 1995-12-21 1999-06-29 Hewlett-Packard Company Highly reflective contacts for light emitting semiconductor devices
JP3285341B2 (ja) * 2000-06-01 2002-05-27 士郎 酒井 窒化ガリウム系化合物半導体の製造方法
JP3466144B2 (ja) * 2000-09-22 2003-11-10 士郎 酒井 半導体の表面を荒くする方法
JP2002208541A (ja) * 2001-01-11 2002-07-26 Shiro Sakai 窒化物系半導体装置及びその製造方法
JP3520919B2 (ja) 2001-03-27 2004-04-19 士郎 酒井 窒化物系半導体装置の製造方法
JP3548735B2 (ja) 2001-06-29 2004-07-28 士郎 酒井 窒化ガリウム系化合物半導体の製造方法
US7005685B2 (en) * 2002-02-28 2006-02-28 Shiro Sakai Gallium-nitride-based compound semiconductor device
US8426818B2 (en) * 2007-02-05 2013-04-23 Bae Systems Information And Electronic Systems Integration Inc. Post-supported microbolometer pixel
US12074228B2 (en) 2015-06-17 2024-08-27 Unm Rainforest Innovations Metal-carbon-nanotube metal matrix composites for metal contacts on photovoltaic cells
WO2016205722A1 (en) * 2015-06-17 2016-12-22 Stc.Unm Metal matrix composites for contacts on solar cells

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2444034A (en) * 1944-06-02 1948-06-29 Standard Telephones Cables Ltd Electrically conducting adhesive
US3386867A (en) * 1965-09-22 1968-06-04 Ibm Method for providing electrical contacts to a wafer of gaas
US3448349A (en) * 1965-12-06 1969-06-03 Texas Instruments Inc Microcontact schottky barrier semiconductor device
US3412043A (en) * 1966-08-05 1968-11-19 Dexter Corp Electrically conductive resinous compositions

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5784188A (en) * 1980-11-13 1982-05-26 Toshiba Corp Semiconductor device
JPS5889956U (ja) * 1981-12-11 1983-06-17 三洋電機株式会社 発光ダイオ−ド素子
US6552367B1 (en) 1999-10-08 2003-04-22 Epistar Corporation High brightness light emitting diode having a layer of distributed contacts

Also Published As

Publication number Publication date
DE2461210A1 (de) 1975-07-10
US3909929A (en) 1975-10-07

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