JPS5087579A - - Google Patents
Info
- Publication number
- JPS5087579A JPS5087579A JP49137088A JP13708874A JPS5087579A JP S5087579 A JPS5087579 A JP S5087579A JP 49137088 A JP49137088 A JP 49137088A JP 13708874 A JP13708874 A JP 13708874A JP S5087579 A JPS5087579 A JP S5087579A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- H10D64/0116—
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- H10P14/263—
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- H10P14/265—
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- H10P14/2911—
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- H10P14/3221—
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- H10P14/3248—
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- H10P14/3421—
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- H10P14/3442—
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- H10P14/3444—
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- H10P95/00—
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US421026A US3914785A (en) | 1973-12-03 | 1973-12-03 | Germanium doped GaAs layer as an ohmic contact |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5087579A true JPS5087579A (OSRAM) | 1975-07-14 |
Family
ID=23668885
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP49137088A Pending JPS5087579A (OSRAM) | 1973-12-03 | 1974-12-02 |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US3914785A (OSRAM) |
| JP (1) | JPS5087579A (OSRAM) |
| BE (1) | BE822655A (OSRAM) |
| CA (1) | CA1034469A (OSRAM) |
| DE (1) | DE2457130A1 (OSRAM) |
| FR (1) | FR2253279B1 (OSRAM) |
| GB (1) | GB1479154A (OSRAM) |
| IT (1) | IT1024956B (OSRAM) |
| NL (1) | NL158022B (OSRAM) |
| SE (1) | SE402839B (OSRAM) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4048627A (en) * | 1975-11-17 | 1977-09-13 | Rca Corporation | Electroluminescent semiconductor device having a restricted current flow |
| US4074305A (en) * | 1976-11-16 | 1978-02-14 | Bell Telephone Laboratories, Incorporated | Gaas layers as contacts to thin film semiconductor layers |
| US4081824A (en) * | 1977-03-24 | 1978-03-28 | Bell Telephone Laboratories, Incorporated | Ohmic contact to aluminum-containing compound semiconductors |
| US4186410A (en) * | 1978-06-27 | 1980-01-29 | Bell Telephone Laboratories, Incorporated | Nonalloyed ohmic contacts to n-type Group III(a)-V(a) semiconductors |
| US4188710A (en) * | 1978-08-11 | 1980-02-19 | The United States Of America As Represented By The Secretary Of The Navy | Ohmic contacts for group III-V n-type semiconductors using epitaxial germanium films |
| US4301188A (en) * | 1979-10-01 | 1981-11-17 | Bell Telephone Laboratories, Incorporated | Process for producing contact to GaAs active region |
| US4523212A (en) * | 1982-03-12 | 1985-06-11 | The United States Of America As Represented By The Secretary Of The Air Force | Simultaneous doped layers for semiconductor devices |
| US4593307A (en) * | 1983-06-30 | 1986-06-03 | International Business Machines Corporation | High temperature stable ohmic contact to gallium arsenide |
| JPH0722141B2 (ja) * | 1984-03-07 | 1995-03-08 | 住友電気工業株式会社 | 半導体素子の製造方法 |
| US4583110A (en) * | 1984-06-14 | 1986-04-15 | International Business Machines Corporation | Intermetallic semiconductor ohmic contact |
| US4853346A (en) * | 1987-12-31 | 1989-08-01 | International Business Machines Corporation | Ohmic contacts for semiconductor devices and method for forming ohmic contacts |
| JPH01280368A (ja) * | 1988-05-06 | 1989-11-10 | Sharp Corp | 化合物半導体発光素子 |
| US5061972A (en) * | 1988-12-14 | 1991-10-29 | Cree Research, Inc. | Fast recovery high temperature rectifying diode formed in silicon carbide |
| US5144410A (en) * | 1989-03-29 | 1992-09-01 | Vitesse Semiconductor Corporation | Ohmic contact for III-V semiconductor devices |
| JP3959434B2 (ja) * | 1995-08-29 | 2007-08-15 | 昭和電工株式会社 | 発光ダイオード素子 |
| JP4050128B2 (ja) * | 2002-10-24 | 2008-02-20 | 松下電器産業株式会社 | ヘテロ接合電界効果型トランジスタ及びその製造方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4921992B1 (OSRAM) * | 1969-06-30 | 1974-06-05 | ||
| JPS5129636B1 (OSRAM) * | 1970-12-25 | 1976-08-26 | ||
| US3770518A (en) * | 1971-01-28 | 1973-11-06 | Varian Associates | Method of making gallium arsenide semiconductive devices |
-
1973
- 1973-12-03 US US421026A patent/US3914785A/en not_active Expired - Lifetime
-
1974
- 1974-09-05 CA CA208,555A patent/CA1034469A/en not_active Expired
- 1974-11-22 SE SE7414708A patent/SE402839B/xx unknown
- 1974-11-27 BE BE150906A patent/BE822655A/xx unknown
- 1974-11-28 NL NL7415531.A patent/NL158022B/xx unknown
- 1974-12-02 JP JP49137088A patent/JPS5087579A/ja active Pending
- 1974-12-02 FR FR7439368A patent/FR2253279B1/fr not_active Expired
- 1974-12-02 IT IT70501/74A patent/IT1024956B/it active
- 1974-12-03 GB GB52162/74A patent/GB1479154A/en not_active Expired
- 1974-12-03 DE DE19742457130 patent/DE2457130A1/de active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US3914785A (en) | 1975-10-21 |
| SE7414708L (OSRAM) | 1975-06-04 |
| USB421026I5 (OSRAM) | 1975-01-28 |
| SE402839B (sv) | 1978-07-17 |
| DE2457130A1 (de) | 1975-06-12 |
| NL158022B (nl) | 1978-09-15 |
| NL7415531A (nl) | 1975-06-05 |
| FR2253279A1 (OSRAM) | 1975-06-27 |
| GB1479154A (en) | 1977-07-06 |
| IT1024956B (it) | 1978-07-20 |
| CA1034469A (en) | 1978-07-11 |
| BE822655A (fr) | 1975-03-14 |
| FR2253279B1 (OSRAM) | 1978-04-14 |