IT1024956B - Procedimento per la fabbricazione di un dispositivo semiconduttone - Google Patents

Procedimento per la fabbricazione di un dispositivo semiconduttone

Info

Publication number
IT1024956B
IT1024956B IT70501/74A IT7050174A IT1024956B IT 1024956 B IT1024956 B IT 1024956B IT 70501/74 A IT70501/74 A IT 70501/74A IT 7050174 A IT7050174 A IT 7050174A IT 1024956 B IT1024956 B IT 1024956B
Authority
IT
Italy
Prior art keywords
semiconductone
procedure
manufacturing
semiconductone device
Prior art date
Application number
IT70501/74A
Other languages
English (en)
Italian (it)
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Application granted granted Critical
Publication of IT1024956B publication Critical patent/IT1024956B/it

Links

Classifications

    • H10D64/0116—
    • H10P14/263—
    • H10P14/265—
    • H10P14/2911—
    • H10P14/3221—
    • H10P14/3248—
    • H10P14/3421—
    • H10P14/3442—
    • H10P14/3444—
    • H10P95/00—
IT70501/74A 1973-12-03 1974-12-02 Procedimento per la fabbricazione di un dispositivo semiconduttone IT1024956B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US421026A US3914785A (en) 1973-12-03 1973-12-03 Germanium doped GaAs layer as an ohmic contact

Publications (1)

Publication Number Publication Date
IT1024956B true IT1024956B (it) 1978-07-20

Family

ID=23668885

Family Applications (1)

Application Number Title Priority Date Filing Date
IT70501/74A IT1024956B (it) 1973-12-03 1974-12-02 Procedimento per la fabbricazione di un dispositivo semiconduttone

Country Status (10)

Country Link
US (1) US3914785A (OSRAM)
JP (1) JPS5087579A (OSRAM)
BE (1) BE822655A (OSRAM)
CA (1) CA1034469A (OSRAM)
DE (1) DE2457130A1 (OSRAM)
FR (1) FR2253279B1 (OSRAM)
GB (1) GB1479154A (OSRAM)
IT (1) IT1024956B (OSRAM)
NL (1) NL158022B (OSRAM)
SE (1) SE402839B (OSRAM)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4048627A (en) * 1975-11-17 1977-09-13 Rca Corporation Electroluminescent semiconductor device having a restricted current flow
US4074305A (en) * 1976-11-16 1978-02-14 Bell Telephone Laboratories, Incorporated Gaas layers as contacts to thin film semiconductor layers
US4081824A (en) * 1977-03-24 1978-03-28 Bell Telephone Laboratories, Incorporated Ohmic contact to aluminum-containing compound semiconductors
US4186410A (en) * 1978-06-27 1980-01-29 Bell Telephone Laboratories, Incorporated Nonalloyed ohmic contacts to n-type Group III(a)-V(a) semiconductors
US4188710A (en) * 1978-08-11 1980-02-19 The United States Of America As Represented By The Secretary Of The Navy Ohmic contacts for group III-V n-type semiconductors using epitaxial germanium films
US4301188A (en) * 1979-10-01 1981-11-17 Bell Telephone Laboratories, Incorporated Process for producing contact to GaAs active region
US4523212A (en) * 1982-03-12 1985-06-11 The United States Of America As Represented By The Secretary Of The Air Force Simultaneous doped layers for semiconductor devices
US4593307A (en) * 1983-06-30 1986-06-03 International Business Machines Corporation High temperature stable ohmic contact to gallium arsenide
JPH0722141B2 (ja) * 1984-03-07 1995-03-08 住友電気工業株式会社 半導体素子の製造方法
US4583110A (en) * 1984-06-14 1986-04-15 International Business Machines Corporation Intermetallic semiconductor ohmic contact
US4853346A (en) * 1987-12-31 1989-08-01 International Business Machines Corporation Ohmic contacts for semiconductor devices and method for forming ohmic contacts
JPH01280368A (ja) * 1988-05-06 1989-11-10 Sharp Corp 化合物半導体発光素子
US5061972A (en) * 1988-12-14 1991-10-29 Cree Research, Inc. Fast recovery high temperature rectifying diode formed in silicon carbide
US5144410A (en) * 1989-03-29 1992-09-01 Vitesse Semiconductor Corporation Ohmic contact for III-V semiconductor devices
JP3959434B2 (ja) * 1995-08-29 2007-08-15 昭和電工株式会社 発光ダイオード素子
JP4050128B2 (ja) * 2002-10-24 2008-02-20 松下電器産業株式会社 ヘテロ接合電界効果型トランジスタ及びその製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4921992B1 (OSRAM) * 1969-06-30 1974-06-05
JPS5129636B1 (OSRAM) * 1970-12-25 1976-08-26
US3770518A (en) * 1971-01-28 1973-11-06 Varian Associates Method of making gallium arsenide semiconductive devices

Also Published As

Publication number Publication date
US3914785A (en) 1975-10-21
SE7414708L (OSRAM) 1975-06-04
JPS5087579A (OSRAM) 1975-07-14
USB421026I5 (OSRAM) 1975-01-28
SE402839B (sv) 1978-07-17
DE2457130A1 (de) 1975-06-12
NL158022B (nl) 1978-09-15
NL7415531A (nl) 1975-06-05
FR2253279A1 (OSRAM) 1975-06-27
GB1479154A (en) 1977-07-06
CA1034469A (en) 1978-07-11
BE822655A (fr) 1975-03-14
FR2253279B1 (OSRAM) 1978-04-14

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