BE822655A - Couche gaas dopee au germanium comme contact ohmique - Google Patents

Couche gaas dopee au germanium comme contact ohmique

Info

Publication number
BE822655A
BE822655A BE150906A BE150906A BE822655A BE 822655 A BE822655 A BE 822655A BE 150906 A BE150906 A BE 150906A BE 150906 A BE150906 A BE 150906A BE 822655 A BE822655 A BE 822655A
Authority
BE
Belgium
Prior art keywords
germanium
ohmic contact
gaas layer
layer doped
doped
Prior art date
Application number
BE150906A
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE822655A publication Critical patent/BE822655A/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02463—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02502—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
BE150906A 1973-12-03 1974-11-27 Couche gaas dopee au germanium comme contact ohmique BE822655A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US421026A US3914785A (en) 1973-12-03 1973-12-03 Germanium doped GaAs layer as an ohmic contact

Publications (1)

Publication Number Publication Date
BE822655A true BE822655A (fr) 1975-03-14

Family

ID=23668885

Family Applications (1)

Application Number Title Priority Date Filing Date
BE150906A BE822655A (fr) 1973-12-03 1974-11-27 Couche gaas dopee au germanium comme contact ohmique

Country Status (10)

Country Link
US (1) US3914785A (fr)
JP (1) JPS5087579A (fr)
BE (1) BE822655A (fr)
CA (1) CA1034469A (fr)
DE (1) DE2457130A1 (fr)
FR (1) FR2253279B1 (fr)
GB (1) GB1479154A (fr)
IT (1) IT1024956B (fr)
NL (1) NL158022B (fr)
SE (1) SE402839B (fr)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4048627A (en) * 1975-11-17 1977-09-13 Rca Corporation Electroluminescent semiconductor device having a restricted current flow
US4074305A (en) * 1976-11-16 1978-02-14 Bell Telephone Laboratories, Incorporated Gaas layers as contacts to thin film semiconductor layers
US4081824A (en) * 1977-03-24 1978-03-28 Bell Telephone Laboratories, Incorporated Ohmic contact to aluminum-containing compound semiconductors
US4186410A (en) * 1978-06-27 1980-01-29 Bell Telephone Laboratories, Incorporated Nonalloyed ohmic contacts to n-type Group III(a)-V(a) semiconductors
US4188710A (en) * 1978-08-11 1980-02-19 The United States Of America As Represented By The Secretary Of The Navy Ohmic contacts for group III-V n-type semiconductors using epitaxial germanium films
US4301188A (en) * 1979-10-01 1981-11-17 Bell Telephone Laboratories, Incorporated Process for producing contact to GaAs active region
US4523212A (en) * 1982-03-12 1985-06-11 The United States Of America As Represented By The Secretary Of The Air Force Simultaneous doped layers for semiconductor devices
US4593307A (en) * 1983-06-30 1986-06-03 International Business Machines Corporation High temperature stable ohmic contact to gallium arsenide
JPH0722141B2 (ja) * 1984-03-07 1995-03-08 住友電気工業株式会社 半導体素子の製造方法
US4583110A (en) * 1984-06-14 1986-04-15 International Business Machines Corporation Intermetallic semiconductor ohmic contact
US4853346A (en) * 1987-12-31 1989-08-01 International Business Machines Corporation Ohmic contacts for semiconductor devices and method for forming ohmic contacts
JPH01280368A (ja) * 1988-05-06 1989-11-10 Sharp Corp 化合物半導体発光素子
US5061972A (en) * 1988-12-14 1991-10-29 Cree Research, Inc. Fast recovery high temperature rectifying diode formed in silicon carbide
US5144410A (en) * 1989-03-29 1992-09-01 Vitesse Semiconductor Corporation Ohmic contact for III-V semiconductor devices
JP3959434B2 (ja) * 1995-08-29 2007-08-15 昭和電工株式会社 発光ダイオード素子
JP4050128B2 (ja) * 2002-10-24 2008-02-20 松下電器産業株式会社 ヘテロ接合電界効果型トランジスタ及びその製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4921992B1 (fr) * 1969-06-30 1974-06-05
JPS5129636B1 (fr) * 1970-12-25 1976-08-26
US3770518A (en) * 1971-01-28 1973-11-06 Varian Associates Method of making gallium arsenide semiconductive devices

Also Published As

Publication number Publication date
USB421026I5 (fr) 1975-01-28
US3914785A (en) 1975-10-21
SE402839B (sv) 1978-07-17
FR2253279A1 (fr) 1975-06-27
SE7414708L (fr) 1975-06-04
DE2457130A1 (de) 1975-06-12
NL158022B (nl) 1978-09-15
NL7415531A (nl) 1975-06-05
GB1479154A (en) 1977-07-06
CA1034469A (fr) 1978-07-11
JPS5087579A (fr) 1975-07-14
IT1024956B (it) 1978-07-20
FR2253279B1 (fr) 1978-04-14

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